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Volume 39; Issue 10
Main
Vacuum
Volume 39; Issue 10
Vacuum
Volume 39; Issue 10
1
Applications of a high spatial resolution combined AES/SIMS instrument
HE Bishop
,
DP Moon
,
P Marriott
,
PR Chalker
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 1.33 MB
Vos balises:
english, 1989
2
Energy distributions of molecular gas ions generated in a special glow-discharge source
Z Wroński
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 277 KB
Vos balises:
english, 1989
3
A new type of hollow cathode discharge gun used in ion beam coating apparatus and theory analysis
Zhang Shulin
,
Wang Jichang
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 218 KB
Vos balises:
english, 1989
4
A model for reactive sputtering with magnetrons
T. Larsson
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 548 KB
Vos balises:
english, 1989
5
Hard coatings
RF Bunshah
,
CV Deshpandey
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 1009 KB
Vos balises:
english, 1989
6
A rotating substrate holder for the production of uniform thin amorphous films and multilayer structures
JSG Taylor
,
N Piggins
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 145 KB
Vos balises:
english, 1989
7
Pumping mechanism for N2 gas in a triode ion pump with A1100 aluminum cathode: Y C Liu et al, J Vac Sci Technol, A6, 1988, 139–143
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 107 KB
Vos balises:
english, 1989
8
Primary vacuum pumps for the fusion reactor fuel cycle: J L Hemmerich, J Vac Sci Technol, A6, 1988, 144–153
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 107 KB
Vos balises:
english, 1989
9
Integrated thermal vacuum sensor with extended range: A W van Herwaarden and P M Sarro, Vacuum, 38, 1988, 449–453
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 107 KB
Vos balises:
english, 1989
10
On the calculation of the overall transmission probability of a variable blade length multiple-stage turbomolecular pump: Tu Ji-Yuan and Yong Nai-Hang, Vacuum, 38, 1988, 13–14
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 107 KB
Vos balises:
english, 1989
11
Rotary pump backstreaming: an analytical appraisal of practical results and the factors affecting them: L Laurenson et al, J Vac Sci Technol, A6, 1988, 238–242
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 107 KB
Vos balises:
english, 1989
12
Vacuum pumping system for the Lanzhou cyclotron: Zhang Shuxiu,Vacuum,38, 1988, 125–127
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
13
Oscillating vane for measuring speed of gas flow: H H Johnsson and B Vonnegut,Rev Sci Instrum,59, 1988, 783–7786
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 174 KB
Vos balises:
english, 1989
14
The emerging technologies of oil-free vacuum pumps: M H Hablanian,J Vac Sci Technol,A6, 1988, 1177–1182
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 174 KB
Vos balises:
english, 1989
15
The molecular drag pump: principle, characteristics, and applications: P Duval et al,J Vac Sci Technol,A6, 1988, 1187–1191
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 174 KB
Vos balises:
english, 1989
16
Analysis of frequency responses for different rotor configurations of small turbomolecular pumps: F Casaro,J Vac Sci Technol,A6, 1988, 1192–1195
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
17
Thirty years of turbomolecular pumps: a review and recent developments: J Henning,J Vac Sci Technol,A6, 1988, 1196–1201
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
18
Proposal for a sensitive leak test telescope: W R Blanchard et al,J Vac Sci Technol,A6, 1988, 235–237
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
19
Use of porous plugs in the transition flow range for the calibration of vacuum gauges: J K N Sharma and Pardeep Mohan,J Vac Sci Technol,A6, 1988, 1217–1221
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
20
An evaluation of the composition of the residual atmosphere above a commercial dry pump: W Wong et al,J Vac Sci Technol,A6, 1988, 1183–1186
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
21
Extension of thermocouple gauge sensitivity to atmospheric pressure: J Zettler and R Sud,J Vac Sci Technol,A6, 1988, 1153–1155
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
22
Some characteristics of an inverted magnetron cold cathode ionization gauge with dual feedthroughs: N T Peacock and R N Peacock,J Vac Sci Technol,A6, 1988, 1141–1144
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
23
Medium resolution atmospheric pressure ionization mass spectrometer: Andrew H Grange,Rev Sci Instrum,59, 1988, 573–579
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
24
A vacuum measurement system with Penning gauge for high voltage application: L M J Vries and G C Damstra,Vacuum,38, 1988, 171–173
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
25
Quantitative measurements with quadrupole mass spectrometers: important specifications for reliable measurements: Werner Groβ Bley,Vacuum,38, 1988, 103–109
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
26
A time-of-flight quadrupole mass spectrometer system for measurements of thermal decomposition: K A Hardy et al,Nucl Instrum Meth Phys Res,B31, 1988, 584–587
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
27
A photoemission study of H2O adsorption on a vicinal Si(100) surface: R McGrath et al,Vacuum,38, 1988, 251–255
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
28
Reaction of atomic and molecular bromine with aluminum: A Landauer Keaton and D W Hess,J appl Phys,63, 1988, 533–539
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
29
Surface effects on the stability of hot cathode ionization gauges: U Harten et al,Vacuum,38, 1988, 167–169
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
30
Model calculation for the tunnel current from a tungsten tip to a Ni(100) surface with a chemisorbed oxygen atom: G Doyen et al,J Vac Sci Technol,A6, 1988, 327–330
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
31
Characterization and thermal desorption spectroscopy study on a new, low outgassing material surface for improved ultrahigh vacuum uses: D Fujita and T Homma,J Vac Sci Technol,A6, 1988, 230–234
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
32
Tritium removal from noble gas streams: W T Shmayda et al,J Vac Sci Technol,A6, 1988, 1259–1262
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
33
Techniques for testing cryopump capacity: John R Porter,J Vac Sci Technol,A6, 1988, 1214–1216
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
34
The influence of heavier gases in pumping helium and hydrogen in an ion pump: M Audi and M DeSimon,J Vac Sci Technol,A6, 1988, 1205–1208
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
35
Lubricating of mechanisms for vacuum service: K G Roller,J Vac Sci Technol,A6, 1988, 1161–1165
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
36
A generalized approach to vacuum system automation: R W McMahon et al,J Vac Sci Technol,A6, 1988, 1158–1160
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
37
Properties of polycrystalline silicon grown on insulating subtrates by electron beam gun evaporation: N K Annamalai et al,Thin Solid Films,155, 1988, 77–79
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
38
Vapor-deposited superconducting lanthanum sulfide films: D D Berkley et al,Thin Solid Films,156, 1988, 271–275
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
39
On the properties of physically vapour-deposited TiAlVN coatings: O Knotek et al,Thin Solid Films,153, 1987, 83–90
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
40
Characteristics of titanium arc evaporation processes: P J Martin et al,Thin Solid Films,153, 1987, 91–102
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
41
Uniform composition TeSe film preparation from alloy sources: R Chiba and N Funakoshi,Thin Solid Films,157, 1988, 307–313
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
42
A study of the adhesion of vacuum-evaporated polyethylene films to aluminium: D Bekiarov et al,Thin Solid Films,157, 1988, 43–48
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
43
Kinetics of growth coalescence of In/GaAs: J B Adams et al,J Vac Sci Technol,A6, 1988, 2029–2033
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
44
Vacuum vapor deposited thin films of a perylene dicarboximide derivative: microstructure versus deposition parameters: M K Debe et al,J Vac Sci Technol,A6, 1988, 1907–1911
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
45
A source replenishment device for vacuum deposition: R. A. Hill,Vacuum,37, 1987, 769–771
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
46
Deposition techniques for the preparation of thin film nuclear targets: A H F Muggleton,Vacuum,37, 1987, 785–817
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
47
Formation and thermal stability of amorphous CuZr thin films deposited by coevaporation: T Minemura et al,J appl Phys,63, 1988, 4426–4430
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
48
Formation of some hierarchy in amorphous structure during the crystallization of vacuum-deposited amorphous semiconductor films: Kunisuke Maki and Yukichi Shigeta,J appl Phys,63, 1988, 5747–5750
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
49
Growth, atomic structure, and oxidation of chromium overlayers on W(110): Neal D Shinn and Paul J Berlowitz,J Vac Sci Technol,A6, 1988, 597–599
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
50
Stress distribution in released vacuum-deposited aluminum films: C van Opdorp and M J Verkerk,J appl Phys,63, 1988, 1518–1525
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
51
Growth processes in amorphous metallic films: a computer simulation: R Manaila et al,Thin Solid Films,158, 1988, 299–312
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
52
Structure of TiN coatings deposited at relatively high rates and low temperatures by magnetron sputtering: V Valvoda et al,Thin Solid Films,156, 1988, 53–63
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
53
The effect of stoichiometry on sputtering deuterium retention and surface damage in titanium carbide films: M Kitajima et al,Thin Solid Films,156, 1988, 231–238
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
54
Deposition of TiB2 films by a co-sputtering method: T Shikama et al,Thin Solid Films,156, 1988, 287–293
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
55
Pressure stability in reactive magnetron sputtering: A G Spencer et al,Thin Solid Films,158, 1988, 141–149
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
56
Solid lubricating fluorine-containing polymer film synthesized by perfluoropolyether sputtering: Iwao Sugimoto and Shojiro Miyake,Thin Solid Films,158, 1988, 51–60
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
57
Characterization of cosputtered tungsten carbide thin films: Hwa-Yueh Yang et al,Thin Solid Films,158, 1988, 37–44
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
58
Preparation properties and applications of boron nitride thin films: S P S Arya and A D'Amico,Thin Solid Films,157, 1988, 267–282
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
59
Structure of reactively sputtered chromium-carbon films: S K Sharma and J P Morlevat,Thin Solid Films,156, 1988, 307–314
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
60
Depth of origin of sputtered atoms: experimental and theoretical study of Cu/Ru(0001): J W Burnett et al,J Vac Sci Technol,A6, 1988, 2064–2068
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
61
Geometrical and surface effects in the sputtering process: S A Schwarz,J Vac Sci Technol,A6, 1988, 2069–2072
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
62
Ion beam self-sputtering using a cathodic arc ion source: D M Sanders,J Vac Sci Technol,A6, 1988, 1929–1933
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
63
Ion sputtering yield measurements for submicrometer thin films: Nina Veisfeld and Joseph D Geller,J Vac Sci Technol,A6, 1988, 2077–2081
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
64
Influence of deposition rate on properties of reactively sputtered TiNx films: J Musil et al,Vacuum,38, 1988, 459–461
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
65
Reconsidering the mechanisms of laser sputtering with Knudsen-layer formation taken into account: Roger Kelly and R W Dreyfus,Nucl Instrum Meth Phys Res,B32, 1988, 341–348
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
66
Sputtering of insulators: G Betz and W Husinsky,Nucl Instrum Meth Phys Res,B32, 1988, 331–340
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
67
The properties of aluminum thin films sputter deposited at elevated temperatures: M Inoue et al,J Vac Sci Technol,A6, 1988, 1636–1639
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
68
Effect of resputtering on composition of WSix films deposited by multilayer sputtering: R Bruce et al,J Vac Sci Technol,A6, 1988, 1642–1645
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
69
Investigation of cosputtered W-C thin films as diffusion barriers: H Y Yang and X-A Zhao,J Vac Sci Technol,A6, 1988, 1646–1649
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
70
Diffusion of Cu into rf-sputtered iron oxide films: Osamu Ishii,J appl Phys,63, 1988, 4753–4755
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
71
Current-voltage relations in magnetrons: S M Rossnagel and H R Kaufman,J Vac Sci Technol,A6, 1988, 223–229
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
72
Cosputtered W75C25 thin film diffusion barriers: Hwa-Yueh Yang et al,Thin Solid Films,158, 1988, 45–50
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
73
A simple and novel technique for the deposition of conducting tin dioxide films: Malay K Karanjai and Dhruba Das Gupta,J Phys D: Appl Phys,21, 1988, 356–358
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
74
In situ investigation of TiN formation on top of TiSi2: M F C Willemsen et al,J Vac Sci Technol,B6, 1988, 53–61
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
75
Properties of ion-beam-sputtered Ni/Fe artificial lattice film: Yasuhiro Nagai et al,J appl. Phys,63, 1988, 1136–1140
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
76
The metastable C49 structure in sputtered TiSi2 thin films: Werner Bretscheider et al,Thin Solid Films,158, 1988, 255–263
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
77
A physical model for eliminating instabilities in reactive sputtering: T Larsson et al,J Vac Sci Technol,A6, 1988, 1832–1836
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
78
Effect of grain size on the oxidation kinetics of sputtered titanium nitride films: T P Thorpe et al,J Vac Sci Technol,A6, 1988, 1727–1729
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
79
Properties of hard tungsten films prepared by sputtering: K K Shih et al,J Vac Sci Technol,A6, 1988, 1681–1685
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
80
Deposition of vanadium oxide films by direct-current magnetron reactive sputtering: E Kusano et al,J Vac Sci Technol,A6, 1988, 1663–1667
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
81
An impulsive collision model for the vibrational and rotational excitation of sputtered molecules: R De Jonge et al,Nucl Instrum Meth Phys Res,B30, 1988, 159–172
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
82
Simulation of isotopic mass effects in sputtering, II: M H Shapiro et al,Nucl Instrum Meth Phys Res,B30, 1988, 152–158
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
83
Sputtered cluster mass distributions, thermodynamic equilibrium and critical phenomena: Herbert M Urbassek,Nucl Instrum Meth Phys Res,B31, 1988, 541–550
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
84
Electrical and optical properties of indium tin oxide thin films prepared on low-temperature substrates by rf magnetron sputtering under an applied external magnetic field: H Nanto et al,J appl Phys,63, 1988, 2711–2716
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
85
A phenomenological model for surface deposition kinetics during plasma and sputter deposition of amorphous hydrogenated silicon: Mark J. Kushner,J appl Phys,62, 1987, 4763–4772
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
86
The application of dynamic recoil mixing to enhance adhesion of gold films on silica substrates: N A G Ahmed and J S Colligon,Vacuum,38, 1988, 83–88
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
87
The friction and wear of ion-implanted ceramics: the role of adhesion: S J Bull and T F Page,Nucl Instrum Meth Phys Res,B32, 1988, 91–95
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
88
Ionizing beam-induced adhesion enhancement and interface chemistry for AuGaAs: C R Wie et al,Vacuum,38, 1988, 157–160
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
89
Novel microstructures for the in situ measurement of mechanical properties of thin films: Mehran Mehregany et al,J appl Phys,62, 1987, 3579–3584
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
90
Improved adhesion of solid lubricating films with ion-beam mixing: K Kobs et al,Philips Tech Rev,44, 1988, 24–29
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
91
Fundamental irradiation processes relevant to plasma-surface technology: G Carter et al,Vacuum,38, 1988, 479–486
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
92
Plasma polymerized thin films containing small silver particles: G Kampfrath et al,Vacuum,38, 1988, 1–3
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
93
Ion beam bombardment effects during film deposition: S M Rossnagel and J J Cuomo,Vacuum,38, 1988, 73–81
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
94
Mechanisms of contaminant particle production, migration, and adhesion: R J Miller et al,J Vac Sci Technol,A6, 1988, 2097–2102
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
95
Stress modification of NiFe films by ion bombardment concurrent with film growth by alloy evaporation: P H Wojciechowski,J Vac Sci Technol,A6, 1988, 1924–1926
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
96
Plasma enhanced chemical vapor deposition of polycrystalline diamond and diamondlike films: D J Vitkavage et al,J Vac Sci Technol,A6, 1988, 1812–1815
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 151 KB
Vos balises:
english, 1989
97
Diamond films by ion-assisted deposition at room temperature: Makoto Kitabatake and Kiyotaka Wasa,J Vac Sci Technol,A6, 1988, 1793–1797
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
98
Control of microstructure and properties of copper films using ion-assited deposition: R A Roy et al,J Vac Sci Technol,A6, 1988, 1621–1626
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
99
Investigation of the void structure in amorphous germanium thin films as a function of low-energy ion bombardment: J E Yehoda et al,J Vac Sci Technol,A6, 1988, 1631–1635
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
100
Influence of deposition parameters on the properties of boron-doped amorphous silicon-carbide films: Swati Ray et al,J appl Phys,62, 1987, 3917–3921
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
101
Structural and electrical properties of silicon nitride films prepared by multipolar plasma-enhanced deposition: P Boher et al,J appl Phys,63, 1988, 1464–1472
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
102
Diamond crystal growth by plasma chemical vapor deposition: C-P Chang et al,J appl Phys,63, 1988, 1744–1748
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
103
Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion-assisted deposition: R P Netterfield et al,J appl Phys,63, 1988, 760–769
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
104
A comparative study of silicon deposition from SiCl4 in cold plasma using argon, H2 or Ar+H2: R P Manory et al,Thin Solid Films,156, 1988, 79–92
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
105
Electric-field-assisted deposition of optical coatings: P F Gu,Thin Solid Films,156, 1988, 153–160
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
106
Inert gas entrapment in films produced by ion-assisted physical vapour deposition processes: G I Grigorov and I N Martev,Thin Solid Films,156, 1988, 265–269
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
107
Morphology and structure of gold silver and copper layers obtained by sputtering during ion bombardment of targets from these metals: Miko Marinov,Thin Solid Films, 157, 1988, 315–323
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
108
Low temperature growth of AIN and Al2O3 films by the simultaneous use of a microwave ion source and an ionized cluster beam system Hiroshi Takaoka et al,Thin Solid Films,157, 1988, 143–158
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
109
High temperatures stability of plasma-enhanced chemically vapour deposited titanium silicide due to two-step rapid thermal annealing: Tohru Hara et al,Thin Solid Films,157, 1988, 135–142
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
110
Plasma deposition of amorphous hydrogenated carbon films on III–V semiconductors: John J Pouch et al,Thin Solid Films,157, 1988, 97–104
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
111
Thin palladium films prepared by metal-organic plasma-enhanced chemical vapour deposition: E Feurer and H Suhr,Thin Solid Films,157, 1988, 81–86
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
112
Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition: Sang S Kim et al,J Vac Sci Technol,A6, 1988, 1740–1744
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
113
Variations in the reflectance of TiN, ZrN and HfN: A J Perry et al,Thin Solid Films,157, 1988, 255–265
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
114
Characterization of PECVD deposited silicon oxynitride thin films: S P Speakman et al,Vacuum,38, 1988, 183–188
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
115
Deposition of hard carbon films by the r.f. glow discharge method: Kenji Kobayashi et al,Thin Solid Film,158, 1988, 233–238
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
116
The deposition rate dependence of plasma polymerization on the radius of curvature of the substrate: H K Lintz et al,J Vac Sci Technol,A6, 1988, 1869–1871
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
117
Growth of Al and Al nitride films in N2−Ne and N2−(Ne+Ar) discharges: construction of a ternary gas phase diagram: James R Siettmann and Carolyn Rubin Aita,J Vac Sci Technol,A6, 1988, 1712–1716
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
118
Uhv linear actuators for NSLS beam lines: T Oversluizen,Vacuum,38, 1988, 27–30
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
119
New microwave ion source for multiply charged ion beam production: K Tokiguchi et al,Vacuum,38, 1988, 487–490
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
120
The development and use of a time-of-flight system to analyse energy spectra produced by a fast atom beam source: S O Saied et al,Vacuum,38, 1988, 469–473
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
121
Optimisation of the properties of a microfocused ion beam system: R J Amos et al,J Phys E: Sci Instrum,21, 1988, 86–91
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
122
Ion implanters: chemical and radiation safety: David G Baldwin et al,Solid State Technol,31, 1988, 99–105
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
123
Broad ion beam modeling for extraction optics optimization and etching process simulation: D Korzec et al,J Vac Sci Technol,B6, 1988, 263–267
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
124
Microbeam line with 1.5 MeV helium ions and protons at Osaka: K Inoue et al,Nucl Instrum Meth Phys Res,B30, 1988, 580–591
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 150 KB
Vos balises:
english, 1989
125
The microbeam facility at the University of Montreal: P F Hinrichsen et al,Nucl Instrum Meth Phys Res,B30, 1988, 276–279
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
126
Activities for the construction of a new Heidelberg proton microprobe: J Scherer et al,Nucl Instrum Meth Phys Res,B30, 1988, 265–270
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
127
A high ionization efficiency source for partially ionized beam deposition: S-N Mei and T-M Lu,J Vac Sci Technol,A6, 1988, 9–12
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
128
A time resolved study of velocity distributions in pulsed molecular beams: Benjamin N Eldridge and Ming L Yu,J Vac Sci Technol,A6, 1988, 1145–1149
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
129
A Monte Carlo investigation of the runaway of H+ ions in helium: S Ushiroda et al,J Phys D : Appl Phys,21, 1988, 756–762
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
130
On the energy distribution of doubly charged atomic ions emitted from liquid metal ion sources: S Papadopoulos,J Phys D : Appl Phys,21, 1988, 194–199
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
131
The electron-beam column for a high-dose and high-voltage electronbeam exposure system Ex-7: S Tamamushi et al,J Vac Sci Technol,B6, 1988, 209–212
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
132
Design and performance of an UHV beamline to produce low and hyperthermal energy ion beams: D L Adler and B H Cooper,Rev Sci Instrum,59, 1988, 137–145
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
133
Scanning positron microbeam
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
134
Low power, 3.2-cm, efficient microwave electron cyclotron resonant ion source: L Mahoney et al,Rev Sci Instrum,59, 1988, 448–452
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
135
Characterization of a saddle field fast atom beam source: S O Saied et al,Vacuum,38,, 1988, 111–115
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
136
A solid state oxygen source for uhv: R Speidel and E-R Weidlich,Vacuum,38, 1988, 89–92
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
137
Hollow-anode discharge with axial-magnetic field as an electron beam source: Vujo I Miljević,J appl Phys,63, 1988, 2237–2240
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
138
Multipole lenses and their application in nuclear microprobe lens systems: D N Jamieson and G J F Legge,Nucl Instrum Meth Phys Res,B30, 1988, 235–241
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
139
Focusing protons and light ions to micron and submicron dimensions: G W Grime and F Watt,Nucl Instrum Meth Phys Res,B30, 1988, 227–234
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
140
Formation of buried nitride layers by ion implantation: J Danilowitsch et al,Nucl Instrum Meth Phys Res,B32, 1988, 437–439
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
141
Energy dependence of concentration of implants and its chemical consequences: K Roessler and G Eich,Nucl Instrum Meth Phys Res,32, 1988, 446–452
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
142
Electronic transitions in surface and near-surface radiation effects: R F Haglund Jr et al,Nucl Instrum Meth Phys Res,B32, 1988, 321–330
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
143
Optically absorbing layers on ion beam modified polymers: a study of their evolution and properties: D Fink et al,Nucl Instrum Meth Phys Res,B32, 1988, 125–130
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
144
Role of the modifications induced by ion beam irradiation in the optical and conducting properties of polyimide: J Davenas et al,Nucl Instrum Meth Phys Res,B32, 1988, 136–141
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
145
Evidence of implantation doping in polyacetylene: J Davenas et al,Nucl Instrum Meth Phys Res,B32, 1988, 166–169
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
146
Molecular structure evolution under krypton ion irradiation of an electropolymerised polyacrylonitrile film: Michèle Raynaud et al,Nucl Instrum Meth Phys Res,B32, 1988, 173–176
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
147
Thermal stability and Bi diffusion in the implanted AZ111 photoresist: R B Guimarāes et al,Nucl Instrum Meth Phys Res,B32, 1988, 419–421
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
148
Buried layers of silicon oxy-nitride fabricated using ion beam synthesis: K J Reeson et al,Nucl Instrum Meth Phys Res,B32, 1988, 427–432
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
149
Defects in SiO2 in buried-oxide structures formed by O+ implantation: R C Barklie et al,Nucl Instrum Meth Phys Res,B32, 1988, 433–436
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
150
Annealing behavior of Si implanted InP: Herbert Kräutle,J appl Phys,63, 1988, 4418–4421
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
151
Photoreflectance study of boron ion-implanted {100} CdTe: P M Amirtharaj et al, J Vac Sci Technol, A6, 1988, 1421–1425
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
152
Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment: F A Stevie et al, J Vac Sci Technol, A6, 1988, 76–80
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
153
Specimen damage by nuclear microbeams and its avoidance: J A Cookson, Nucl Instrum Meth Phys Res, B30, 1988, 324–330
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
154
Effects of ion implantation on poly(dimethylsilylene-co-methyl-phenylsyilylene: R A Basher et al, Nucl Instrum Meth Phys Res, B30, 1988, 520–527
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
155
Static and dynamic deformations stimulated by ion implantation: S Joneliūnas et al, Nucl Instrum Meth Phys Res, B30, 1988, 528–530
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
156
Displacement damage in LiNbO3: E R Hodgson and F Agulló-López, Nucl Instrum Meth Phys Res, B32, 1988, 42–44
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
157
Range distribution of implanted cesium ions in silicon dioxide films: Bruce J Fishbein and James D Plummer, J appl Phys, 63, 1988, 5887–5889
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
158
Amorphous phase formation in Ni3B by low-temperature deuterium implantation: L Thomé et al, J appl Phys, 63, 1988, 722–725
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
159
Annealing behaviour of extremely low energy beryllium implantation into Ga0.47In0.53As: G Fernholz et al, Thin Solid Films, 156, 1988, 239–242
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
160
Cross-sectional transmission electron microscope study of intrinsic solid-phase epitaxial growth in self-ion-implanted (001) Si: C W Nieh and L J Chen, J appl Phys, 63, 1988, 575–577
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
161
Surface cracking of vitreous fused silica induced by MeV ion beam bombardment: Chengru Shi and T A Tombrello, Radiat Effects, 105, 1988, 291–301
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
162
The influence of thermal relaxation on implantation induced disorder accumulation: G Carter et al, Radiat Effects, 105, 1988, 211–223
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
163
Transverse straggling of MeV oxygen ions implanted in silicon: J J Grob et al, Nucl Instrum Meth Phys Res, B30, 1988, 34–37
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
164
High dose uranium ion implantation into silicon: I G Brown et al, Nucl Instrum Meth Phys Res, B31, 1988, 558–562
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
165
On-line measurement of the spatial dose uniformity in ion implantation processes: Thomas Stiehler, Nucl Instrum Meth Phys Res, B31, 1988, 563–566
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
166
Influence of boron related defects on activation of silicon implanted into undoped semi-insulating GaAs: Fumio Orito et al, J appl Phys, 63, 1988, 2691–2693
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
167
Optical investigations of ion implant damage in silicon: R E Hummel et al, J appl Phys, 63, 1988, 2591–2594
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
168
Ion implantation, a method for fabricating light guides in polymers: J R Kulish et al, J appl Phys, 63, 1988, 2517–2521
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
169
Range measurements and thermal stability study of AZ111 photoresist implanted with Bi ions: R B Guimâraes et al, J appl Phys, 63, 1988, 2502–2506
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
170
Transient boron diffusion in ion-implanted crystalline and amorphous silicon: T O Sedgwick et al, J appl Phys, 63, 1988, 1452–1463
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
171
Formation of paramagnetic defects in high-purity silica by high-energy ions: E Dooryhee et al, J appl Phys, 63, 1988, 1399–1407
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
172
Radiation effects in thin films of high Tc superconductors: G J Clark et al, Nucl Instrum Meth Phys Res, B32, 1988, 405–411
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
173
The effects of p+ implant species and dose on black gold formation: Sabri Arac et al, J Vac Sci Technol, A6, 1988, 1414–1416
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
174
Radiation effects on metal-insulator-semiconductor diode energetic ion detectors: R C Hughes, J Vac Sci Technol, B6, 1988, 513–516
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
175
Properties of AIN films deposited on N-implanted Al: Shigeo Ohira et al, Nucl Instrum Meth Phys Res.B32, 1988, 66–70
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
176
Characterization of H+ ion irradiated silicon carbides: Nobuya Iwamoto et al, Nucl Instrum Meth Phys Res, B32, 1988, 37–41
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
177
Ion implantation and annealing of crystalline oxides and ceramic materials: C W White et al, Nucl Instrum Meth Phys Res, B32, 1988, 11–22
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
178
An in situ annealing study of lead implanted single crystal calcium titanate: J Rankin et al, Nucl Instrum Meth Phys Res, B32, 1988, 28–31
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
179
Microstructural characterization of nitrogen implanted 440C steel: F M Kustas et al, Nucl Instrum Meth Phys Res, B31, 1988, 393–401
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 152 KB
Vos balises:
english, 1989
180
Preparation and characteristics of ZnS thin films by intense pulsed ion beam: Yutaka Shimotori et al, J appl. Phys, 63, 1988, 968–970
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
181
Shattering solids by irradiating supercurrent ion beams: A D Pogrebnjak et al, Radiat Effects, 106, 1988, 209–218
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
182
Range profiles of Ar implanted into C films: F Abel et al, Nucl Instrum Meth Phys Res, B30, 1988, 13–15
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
183
Lattice site occupation of compound forming elements implanted into aluminium: G C Xiong et al, Nucl Instrum Meth Phys Res, B29, 1988, 643–649
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
184
The effect of a thin ultraviolet grown oxide on metal-GaAs contacts: M T Schmidt et al, J Vac Sci Technol, A6, 1988, 1446–1450
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
185
Characterization of molecular-beam epitaxially grown CdTe surfaces by high-energy electron diffraction and synchrotron radiation photo-emission spectroscopy: Isaac Hernández-Calderón et al, J Vac Sci Technol, A6, 1988, 1343–1347
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
186
Growth of epitaxial CaSi2 films on Si(111): J F Morar and M Wittmer, J Vac Sci Technol, A6, 1988, 1340–1342
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
187
Epitaxial silicon reactor technology—a review: M L Hammond, Solid State Technol, 31, 1988, 159–164
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
188
Light-enhanced molecular-beam epitaxial growth in II–VI and III–V compound semiconductors: H H Farrell et al, J Vac Sci Technol, B6, 1988, 779–781
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
189
Growth and properties of doped CdTe films grown by photoassisted molecular-beam epitaxy: S Hwang et al, J Vac Sci Technol, B6, 1988, 777–778
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
190
Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0 ⩽ x ⩽ 1) by molecular-beam epitaxy: H J Cornelissen et al, J Vac Sci Technol, B6, 1988, 769–772
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
191
Improvements to and characterization of GaInAs/AlInAs hetero-interfaces grown by molecular-beam epitaxy: E G Scott et al, J Vac Sci Technol, B6, 1988, 603–606
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
192
Molecular-beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes: R Katsumi et al, J Vac Sci Technol, B6, 1988, 593–596
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
193
Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48As quantum wells: J L de Miguel et al, J Vac Sci Technol, B6, 1988, 617–619
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
194
Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy: D C Radulescu et al, J appl Phys, 63, 1988, 5115–5120
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
195
Molecular stream epitaxy and the role of the boundary layer in chemical vapor deposition: T Katsuyama and S M Bedair, J appl Phys, 63, 1988, 5098–6103
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
196
Seed shape dependence of Si solid-phase epitaxy : preferential facet growth: Eiichi Murakami et al, J appl Phys, 63, 1988, 4975–4978
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
197
Optical properties of molecular beam epitaxially grown GaAs1−xSbx (0 < x < 0.5) on GaAs and InP substrates: D Huang et al, J appl Phys, 63, 1988, 5859–5862
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
198
Ultrahigh vacuum in situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111): M Yata et al, J appl Phys, 63, 1988, 5751–5755
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
199
Growth and characterization of Si1−xGex and Ge epilayers on (100) Si: J M Baribeau et al, J appl Phys, 63, 1988, 5738–5746
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
200
Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400°C: Myoung Gi So and John S Chun, J Vac Sci Technol, A6, 1988, 5–8
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
201
Epitaxial growth and X-ray structural characterization of Zn1−xFexSe films on GaAs(001): B T Jonker et al, J Vac Sci Technol, A6, 1988, 1946–1949
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
202
Issues in molecular-beam epitaxy kinetics of compound semiconductor based heterostructures: Jasprit Singh and K K Bajaj, J Vac Sci Technol, A6, 1988, 2022–2028
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
203
GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy: Junji Saito et al, J appl Phys, 63, 1988, 404–409
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
204
Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy: J P Praseuth et al, J appl Phys, 63, 1988, 400–403
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
205
Charge transfer adsorption in silicon vapor-phase epitaxial growth: A Ishitani et al, J appl Phys, 63, 1988, 390–394
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
206
Optical and structural characteristics of Al2O3 films deposited by the reactive ionized cluster beam method: H Hashimoto et al, J appl Phys, 63, 1988, 241–244
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
207
Low-temperature annealing of As-implanted Ge: S V Hattangady et al, J appl Phys, 63, 1988, 68–74
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
208
Ga0.5In0.5P/GaAs interfaces by organometallic vapor-phase epitaxy: D P Bour et al, J appl Phys, 63, 1988, 1241–1243
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 1989
209
Localized epitaxial growth of IrSi3 on (111) and (001) silicon: J J Chu et al, J appl Phys, 63, 1988, 1163–1167
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 1989
210
Density of ZnS thin films grown by atomic layer epitaxy: M Oikkonen et al, J appl Phys, 63, 1988, 1070–1074
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 1989
211
A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure: Seigo Kanemaru et al, J appl Phys, 63, 1988, 1060–1064
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 1989
212
Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films: Miltiadis K Hatalis and David W Greve, J appl Phys, 63, 1988, 2260–2266
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 1989
213
Crystallization of SiO by HE+ bombardment: M D Walters et al, Radiat Effects, 106, 1988, 189–201
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 1989
214
Photoluminescence spectra of highly doped AlxGa1−xAs grown by molecular-beam epitaxy: Junko Ogawa et al, J appl Phys, 63, 1988, 2765–2768
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 1989
215
GaP/Si heteroepitaxy by complex ion beam sputtering: F Ishizuka et al, J appl Phys, 63, 1988, 2091–2093
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
216
Growth kinetics and step density in reflection high-energy electron diffraction during molecular-beam epitaxy: Shaun Clarke and Dimitri D Vvedensky, J appl Phys, 63, 1988, 2272–2283
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
217
Interfacial reactions in the Ti/GaAs system: Ki Bum Kim et al, J Vac Sci Technol, A6, 1988, 1473–1477
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
218
Diffusion model for Ohmic contacts to GaAs: A K Kulkarni and C Lai, J Vac Sci Technol, A6, 1988, 1531–1534
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
219
Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces : effects on valence-band discontinuity measurements: R S List et al, J Vac Sci Technol, A6, 1988, 1543–1547
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
220
Metal/semiconductor interfaces on SnO2(110): J W Erickson et al, J Vac Sci Technol, A6, 1988, 1593–1598
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
221
Tungsten-rhenium alloys as diffusion barriers between aluminum and silicon: S E Hörnström et al, J Vac Sci Technol, A6, 1988, 1650–1655
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 154 KB
Vos balises:
english, 1989
222
Thermochemical modeling of interfacial reactions and selective deposition at growth from the vapor: J O Carlsson, J Vac Sci Technol, A6, 1988, 1656–1662
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
223
Kinetics and mechanism of reaction at room temperature in thin Au/metal couples: Z̆. Marinković and V Simić, Thin Solid Films, 156, 1988, 105–115
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
224
The interaction of copper and nickel : nickel monolayers on a Cu{100} single crystal: M A Morris et al, Thin Solid Films, 156, 1988, 65–78
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
225
The oxidation of PtSi, Pt2Si and polycrystalline silicon in ultrahigh vacuum residual gas: H C Swart et al, Thin Solid Films, 158, 1988, 61–67
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
226
Intermixing of Co/GdxOy thin films on Kapton polyimide: Kartik Shanker et al, Thin Solid Films, 157, 1988, 223–231
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
227
Effect of mixing ions on the formation process of β-SiC fabricated by ion beam mixing: Tadamasa Kimura et al, Thin Solid Films, 157, 1988, 117–127
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
228
Reactive and nonreactive ion mixing of Ti films on carbon substrates: A A Galuska et al, J Vac Sci Technol, A6, 1988, 110–122
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
229
Ion mixing of Al2O3 and Al films on SiO2: A A Galuska et al, J Vac Sci Technol, A6, 1988, 185–192
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 1989
230
Transient annealing of Sn+ implanted GaAs: M A Shahid et al, Nucl Instrum Meth Phys Res, B30, 1988, 531–539
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
231
Ion-induced mixing at Nb/Fe2O3 interface studied by CEMS technique: J Li and B X Liu, Nucl Instrum Meth Phys Res, B31, 1988, 407–411
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
232
Analysis of grain growth due to ion irradiation of thin films: A M Ibrahim, Nucl Instrum Meth Phys Res, B29, 1988, 650–652
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
233
Superconducting and transport properties and the mixing process in Al/Si multilayer films: Xiao-Xing Xi et al, Nucl Instrum Meth Phys Res, B30, 1988, 56–60
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
234
Diffusion of boron, phosphorus and arsenic implanted in thin films of cobalt disilicide: O Thomas et al, J Vac Sci Technol, A6, 1988, 1736–1739
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
235
Mixing of Pt-René N4 alloy under Pt+ bombardment: V Srinivasan and R S Bhattacharya, J appl Phys, 63, 1988, 2257–2259
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
236
Interactions between interstitial atoms in silicon : arsenic-argon-boron and boron-argon-phosphorus: S Aronowitz, J appl Phys, 63, 1988, 1037–1040
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
237
Interdiffusion and structural relaxation in Mo/Si multilayer films: Hideo Nakajima et al, J appl Phys, 63, 1988, 1046–1051
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
238
Platinum silicide contact to arsenic-doped polycrystalline silicon: H-C W Huang et al, J appl Phys, 63, 1988, 1111–1116
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
239
Ion beam mixing of GaAs with films of Al, Si and their nitrides: R Fastow et al, J appl Phys, 63, 1988, 2586–2590
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
240
Reflection electron microscopy observation of the Si-SiO2 interface: Kouichirou Honda et al, J appl Phys, 63, 1988, 2637–2640
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
241
Silicon and silicon dioxide thermal bonding for silicon-on-insulator applications: R D Black et al, J appl Phys, 63, 1988, 2773–2777
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
242
The formation of an amorphous silicide by thermal reaction of sputter-deposited Ti and Si layers: Ivo J M M Raajimakers et al, J appl Phys, 63, 1988, 2790–2795
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
243
Reordering of polycrystalline Pd2Si on epitaxial Pd2Si: C M Comrie et al, J appl Phys, 63, 1988, 2402–2405
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
244
Annealing behavior of refractory metal multilayers on Si : the Mo/Ti and W/Ti systems: E Puppin et al, J appl Phys, 63, 1988, 2414–2419
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
245
Ion mixing and thermochemical properties of tracers in Ag: E Ma et al, J appl Phys, 63, 1988, 2449–2451
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
246
Metastable bismuth-iron alloy films synthesized with ion mixing and magnetron copsuttering: Quing-Ming Chen et al, J appl Phys, 63, 1988, 2452–2453
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
247
Charge-transfer dipole moments at the Si-SiO2 interface: Hisham Z Massoud, J appl Phys, 63, 1988, 2000–2005
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 1989
248
Titanium silicides formed by rapid thermal vacuum processing: C X Dexin et al, J appl Phys, 63, 1988, 2171–2173
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
249
Reactive and chemically assisted ion beam etching of Si and SiO2: M A Carter and G F Goldspink, Vacuum, 38, 1988, 5–10
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
250
Magnetron-plasma ion beam etching : a new dry etching technique: J D Chinn, J Vac Sci Technol, A6, 1988, 1379–1383
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
251
Chemically enhanced ion etching on refractory metal silicides: W L O'Brien et al, J Vac Sci Technol, A6, 1988, 1384–1387
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
252
Effects of plasma stripping on the oxidation states of aluminum-silicon and tungsten surfaces: J Hackenberg and J Linn, J Vac Sci Technol, A6, 1988, 1388–1392
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
253
Valence-band photoemission and electron-energy-loss studies of reactive ion etched silicon dioxide: S W Robey and G S Oehrlein, J Vac Sci Technol, A6, 1988, 1503–1507
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
254
Plasma etching with a microwave cavity plasma disk source: J Hopwood et al, J Vac Sci Technol, B6, 1988, 268–271
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
255
Anisotropy of low-energy ion etching via electron cyclotron resonance plasma: Y Tobinaga et al, J Vac Sci Technol, B6, 1988, 272–276
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
256
Electrical damage induced by ion beam etching of GaAs: A Scherer et al, J Vac Sci Technol, B6, 1988, 277–279
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
257
Effects of dry etching on the electrical properties of silicon: J M Heddleson et al, J Vac Sci Technol, B6, 1988, 280–283
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
258
Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride: D Field et al, J Vac Sci Technol, B6, 1988, 551–558
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
259
Controlled etching of silicate glasses by pulsed ultraviolet laser radiation: B Braren and R Srinivasan, J Vac Sci Technol, B6, 1988, 537–541
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
260
A new ultrafine groove fabrication method utilizing electron cyclotron resonance plasma deposition and reactive ion etching: Shigehisa Ohki et al, J Vac Sci Technol, B6, 1988, 533–536
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
261
Electron-beam lithography system using a quadrupole triplet: Shigeo Okayama, J Vac Sci Technol, B6, 1988, 199–203
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
262
High-precision reticle making by electron-beam lithography: Shin-ichi Hamaguchi et al, J Vac Sci Technol, B6, 1988, 204–208
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
263
Plasma-assisted etching of tungsten films : a quartz-crystal micro-balance study: F Fracassi and J W Coburn, J appl Phys, 63, 1988, 1758–1761
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
264
Wet-chemical etching of III–V semiconductors: J J Kelly et al, Philips Tech Rev, 44, 1988, 61–74
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 155 KB
Vos balises:
english, 1989
265
Phenomena produced by ion bombardment in plasma-assisted etching environments: Harold F. Winters, J Vac Sci Technol, A6, 1988, 1997–2000
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
266
Fluctuations during JET discharges with H-mode: M Malacarne et al, Plasma Phys Control Fusion, 29, 1987, 1675–1686
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
267
O+, O+2, O+3 and O+4 ions in Ar-O2 sputtering discharges : comments on “Oxidation mechanism in rf CO2 plasma”, Vacuum, 36, 85 (1986): Carolyn Rubin Aita and Michel E Marhic, Vacuum, 38, 1988, 37–38
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
268
Ion emission from plasma-focus facilities: M Sadowski et al, Plasma Phys Control Fusion, 30, 1988, 763–769
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
269
Self-similar expansions in ion beam fusion: A Barrero and A Fernández, Plasma Phys Control Fusion, 29, 1987, 1605–1613
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
270
Time of flight measurements of the ratio of radial diffusion coefficient and mobility for electron swarms in helium, argon, neon and krypton at high E/N: S A J Al-Amin and J Lucas, J Phys D: Appl Phys, 20, 1987, 1590–1595
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
271
Plasma oscillation modes in a low-pressure plane positive column: D A Shapiro, J Phys D: Appl Phys, 20, 1987, 1230–1231
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
272
Striations in a gas discharge: F C van den Heuvel, Philips Tech Rev, 44, 1988, 89–95
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
273
Monte Carlo simulation of ion transport through rf glow-discharge sheaths: Brian E Thompson et al, J appl Phys, 63, 1988, 2241–2251
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
274
Electron energy distributions in oxygen microwave plasmas: J E Heidenreich III et al, J Vac Sci Technol, B6, 1988, 288–292
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
275
An 18O study of oxygen exchange phenomena during microwave-discharge plasma oxidation of silicon: Shin-ichiro Kimura et al, J appl Phys, 63, 1988, 4655–4660
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
276
Magnetic field gradient effects on ion energy for electron cyclotron resonance microwave plasma stream: Morito Matsuoka and Ken'ichi Ono, J Vac Sci Technol, A6, 1988, 25–29
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 148 KB
Vos balises:
english, 1989
277
Coherent meson production relativistic heavy-ion collision: Dipak Ghosh et al, Can J Phys, 66, 1988, 26–28
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 148 KB
Vos balises:
english, 1989
278
Secondary ion beam profile calculations in a 252Cf plasma desorption time-of-light mass spectrometer: F Riggi, Nucl Instrum Meth Phys Res, B31, 1988, 588–591
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 148 KB
Vos balises:
english, 1989
279
Nondiffusive velocity broadening in ion energy analyzer operation: H Fujita et al, J appl Phys, 63, 1988, 308–314
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 148 KB
Vos balises:
english, 1989
280
Novel approach for particle velocity and size measurement under plasma conditions: Tadahiro Sakuta and Maher I Boulos, Rev Sci Instrum, 59, 1988, 285–291
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 148 KB
Vos balises:
english, 1989
281
Magnetron plasma diagnostics and processing implications: S M Rossnagel, J Vac Sci Technol, A6, 1988, 1821–1826
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 148 KB
Vos balises:
english, 1989
282
Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry: F Ferrieu et al, J appl Phys, 62, 1987, 3458–3461
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 148 KB
Vos balises:
english, 1989
283
(111) random and 〈110〉 channeled implantation profiles and range parameters in Hg1−xCdxTe: R G Wilson, J appl Phys, 63, 1988, 5302–5311
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
284
Channeling simulation in Ni3Al: John H Barrett, Nucl Instrum. Meth Phys Res, B30, 1988, 546–550
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
285
Measurement of the electronic stopping power of gold for protons in a large solid angle transmission geometry: D Semrad et al, Radiat Effects, 104, 1987, 67–79
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
286
Range profiles of helium in solids: D Fink et al, Radiat Effects, 104, 1987, 1–42
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
287
Quantitative analysis of channeling data for the determination of the amorphous fraction in ion bombarded single crystals: A Benyagoub and L Thomé, Radiat Effects, 105, 1987, 9–15
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
288
Effects of energy straggling on surface analysis with fast ion beams: Akira Kawano and Yoshiaki Kido, J appl Phys, 63, 1988, 75–79
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
289
Low-energy electronic stopping for boron in beryllium: C R Gossett et al, Radiat Effects, 105, 1988, 285–289
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
290
Distribution of energy in polymers due to incident electrons and protons: M L Rustgi et al, Radiat Effects, 105, 1988, 303–311
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
291
Stopping powers of Be, Al, Ti, V, Fe, Co, Ni, Cu, Zn, Mo, Rh, Ag, Sn, Ta, Pt and Au for 6.5 MeV protons: R Ishiwari et al, Nucl Instrum Meth Phys Res, B31, 1988, 503–517
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 1989
292
Grazing X-ray reflectometry and Rutherford backscattering : two complementary techniques for the study of thin film mixing: M G Le Boité et al, Nucl Instrum Meth Phys Res, B29, 1988, 653–660
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
293
Characterization of SrF2 thin films and of SrF2/InP structures: A S Barriere et al, Thin Solid Films, 158, 1988, 81–91
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
294
Organometallic chemical vapor phase deposition of “Mn2Si”: G T Stauf et al, Thin Solid Films, 156, 1988, 327–336
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
295
Electron emission from electroformed carbon films: H Araki and T Hanawa, Vacuum, 38, 1988, 31–35
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
296
Secondary ion mass spectrometry sensitivity factors versus ionization potential and electron affinity for many elements in HgCdTe and CdTe using oxygen and cesium ion beams: R G Wilson, J appl Phys, 63, 1988, 5121–5125
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
297
Ion microscopy using magnifying ion transport systems and position sensitive detectors: S S Klein and P H A Mutsaers, Nucl Instrum Meth Phys Res, B30, 1988, 349–355
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
298
Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry : detection of (CsR)+ molecular ions (R = rare gas): M A Ray et al, J Vac Sci Technol, A6, 1988, 44–50
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
299
Variation of yield with thickness in SIMS and PDMS : measurements of secondary ion emission from organized molecular films: G Bolbach et al, Nucl Instrum Meth Phys Res, B30, 1988, 74–82
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 1989
300
Helium diffraction from (2 x n) structures on Si(001): D M Rohlfing et al, Vacuum, 38, 1988, 287–289
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
301
Atomic beam scattering: N V Richardson, Vacuum, 38, 1988, 279–285
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
302
Unconstrained optimization in LEED : application to Ge(111) (1 x 1)-H: S P Tear and P G Cowell, Vacuum, 38, 1988, 219–221
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
303
Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs: D E Aspnes et al, J Vac Sci Technol, A6, 1988, 1327–1332
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
304
Reflection high-energy electron diffraction studies of principal streak intensity profiles and adatom coverage of (100) GaAs grown by molecular-beam epitaxy: C W Farley and B G Streetman, J Vac Sci Technol, B6, 1988, 749–753
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
305
Medium-energy ion scattering studies of relaxation at metal surfaces: S M Yalisove and W R Graham, J Vac Sci Technol, A6, 1988, 588–596
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
306
Scanning differential polarization microscope : its use to image linear and circular differential scattering: William Mickols and Marcos F Maestre, Rev Sci Instrum, 59, 1988, 867–872
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
307
Auger electron spectroscopy : method for the accurate measurement of signal and noise and a figure of merit for the performance of AES instrument sensitivity: M P Seah and C P Hunt, Rev Sci Instrum, 59, 1988, 217–227
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 1989
308
Etching on polar (111) surfaces of CdTe crystals studied with Auger electron spectroscopy: Y-C Lu et al, J appl Phys, 62, 1987, 4453–4459
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
309
Tunneling microscopy of NbSe2 in air: D C Dahn et al, J appl Phys, 63, 1988, 315–318
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
310
Concentric tube scanning tunneling microscope: C W Snyder and A L de Lozanne, Rev Sci Instrum, 59, 1988, 541–544
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
311
“Tracking” tunneling microscopy: D W Pohl and R Möller, Rev Sci Instrum, 59, 1988, 840–842
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
312
Low-temperature atomic force microscopy: M D Kirk et al, Rev Sci Instrum, 59, 1988, 833–835
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
313
Image charge focusing of relativistic electron beams: S Humphries, Jr and Carl B Ekdahl, J appl Phys, 63, 1988, 583–585
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
314
Scanning electron microscopy study of seeded recrystallization of silicon-on-insulator layers with either polycrystalline or epitaxially deposited silicon in the seed windows: D A Smith et al, J appl Phys, 63, 1988, 1438–1441
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
315
Application of the scanning tunneling microscope to insulating surfaces: R C Jaklevic et al, J Vac Sci Technol, A6, 1988, 448–453
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
316
The effect of cooling rate on the surface reconstruction of annealed silicon(111) studied by scanning tunneling microscopy and low-energy electron diffraction: M D Pashley et al, J Vac Sci Technol, A6, 1988, 488–492
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
317
Study of metal surfaces by scanning tunneling microscopy with field ion microscopy: Y Kuk et al, J Vac Sci Technol, A6, 1988, 524–528
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
318
Scanning tunneling microscopy of graphite adsorbed metal species and sliding charge-density wave systems: J W Lyding et al, J Vac Sci Technol, A6, 1988, 363–367
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
319
Tip contamination effects in ambient pressure scanning tunneling microscopy imaging of graphite: T Tiedje et al, J Vac Sci Technol, A6, 1988, 372–375
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
320
A high-performance scanning tunneling microscope: M P Cox and P R Griffin, J Vac Sci Technol, A6, 1988, 376–378
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
321
A new symmetric scanning tunneling microscope design: P Davidson et al, J Vac Sci Technol, A6, 1988, 380–382
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
322
Scanning tunneling microscopy topography of electron-beam evaporated niobium thin films in Nb-NbOx-Pb tunnel junctions on quartz substrates: D G Walmsley et al, J Vac Sci Technol, A6, 1988, 404–407
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
323
Scanning tunneling microscopy imaging of microbridges under scanning electron microscopy control: M Anders et al, J Vac Sci Technol, A6, 1988, 436–439
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
324
Observation of microfabricated patterns by scanning tunneling microscopy: S Okayama et al, J Vac Sci Technol, A6, 1988, 440–444
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 1989
325
Surface analysis of bulk polymers using single- and multiple-photon ionization: U Schühle et al, J Vac Sci Technol, A6, 1988, 936–940
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 1989
326
Surface chemical analysis of polydiacetylene films exposed to electron beam and ultraviolet irradiation: R J Colton et al, J Vac Sci Technol, A6, 1988, 933–935
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 1989
327
Low-energy neutral/ion backscattering at As/Si(001): H Niehus et al, J Vac Sci Technol, A6, 1988, 625–629
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 1989
328
X-ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2 magnetron ion etching : comparisons to reactive ion etching: Gottlieb S Oehrlein et al, J Vac Sci Technol, A6, 1988, 1989–1993
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 1989
329
Dependence of microstructure of TiN coatings on their thickness: V Valvoda et al, Thin Solid Films, 158, 1988, 225–232
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 1989
330
The design of a versatile scanning proton microprobe of high resolution and efficiency: G J F Legge et al, Nucl Instrum Meth Phys Res, B30, 1988, 252–259
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 1989
331
Annealed Czochralski grown silicon crystals : a new material for the monochromatisation of synchrotron radiation and X-rays above 60 keV: J R Schneider et al, Nucl Instrum Meth Phys Res, B29, 1988, 661–674
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 1989
332
Narrowband filters for precision monochromatic light sources
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 106 KB
Vos balises:
english, 1989
333
New Pirani gauge from MKS
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 106 KB
Vos balises:
english, 1989
334
New MKS flowmeter calibration system
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 106 KB
Vos balises:
english, 1989
335
VAT series 14 gate valves
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
336
High performance hoses and ‘O’-rings from safelab
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 1989
337
High performance SIMS
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 310 KB
Vos balises:
english, 1989
338
Vacuum furnace for steel powder atomising
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 99 KB
Vos balises:
english, 1989
339
Cryo-Torr product folder
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 99 KB
Vos balises:
english, 1989
340
Accessories increase leak detector's versatility
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 99 KB
Vos balises:
english, 1989
341
News for users of high vacuum systems—vacuum leadthoughs now on ISO standard flanges
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 339 KB
Vos balises:
english, 1989
342
A complete range of turbo control and power supplies
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 239 KB
Vos balises:
english, 1989
343
New Pirani vacuum sensor has integral transmitter
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 343 KB
Vos balises:
english, 1989
344
Automatic leak detector and needs no liquid nitrogen
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 105 KB
Vos balises:
english, 1989
345
Balzers introduces all-in-one cryo preparation chamber
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 105 KB
Vos balises:
english, 1989
346
Graham Kinney pumps for Saudi
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 103 KB
Vos balises:
english, 1989
347
New Graham Kinney technical brochure
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 103 KB
Vos balises:
english, 1989
348
New Cambridge headquarters for Torvac and Wentgate
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 103 KB
Vos balises:
english, 1989
349
Spectron finds leak in Oxford street megastore
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 281 KB
Vos balises:
english, 1989
350
Torvac now offers comprehensive furnace capability
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 178 KB
Vos balises:
english, 1989
351
Veeco instruments appoints new UK sales manager
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 149 KB
Vos balises:
english, 1989
352
UHV system aids MIT's research into high temperature superconductors
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 383 KB
Vos balises:
english, 1989
353
Balzers publishes 1988 literature index
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 236 KB
Vos balises:
english, 1989
354
Oxford applied research ‘new review’ winter
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 84 KB
Vos balises:
english, 1989
355
Edwards news no 17
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 84 KB
Vos balises:
english, 1989
356
Jacques Friedel to receive 1988 Von Hippel award of Materials Research Society
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 84 KB
Vos balises:
english, 1989
357
Annoucements
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 98 KB
Vos balises:
english, 1989
358
Total and partial pressure measurement in vacuum systems: J H Leck, Blakie & Sons Ltd, Glasgow, 1988 201 pp. Price £45
W. Steckelmacher
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 133 KB
Vos balises:
english, 1989
359
Methods of surface analysis (techniques and applications): J M Walls (ed), Cambridge University Press, 1989 342 pp. Price £45.00
W. Steckelmacher
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 133 KB
Vos balises:
english, 1989
360
Physics at surfaces: A Zangwill, Cambridge University Press, 1988 454 pp. Price £40.00 (hardcovers), £15.00 (paperback)
W. Steckelmacher
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 198 KB
Vos balises:
english, 1989
361
Molecular flow in complex vacuum systems: G L Saksaganskii, Gordon and Breach, Science Publishers, NY, 1988. xii + 162 pp. Price $89.00 (list), $42.00 (textbook)
W. Steckelmacher
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 67 KB
Vos balises:
english, 1989
362
New patent
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 87 KB
Vos balises:
english, 1989
363
Editorial: Software survey section
Journal:
Vacuum
Année:
1989
Langue:
english
Fichier:
PDF, 38 KB
Vos balises:
english, 1989
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