Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy: D C Radulescu et al, J appl Phys, 63, 1988, 5115–5120
Volume:
39
Année:
1989
Langue:
english
DOI:
10.1016/0042-207x(89)90897-x
Fichier:
PDF, 156 KB
english, 1989