J. Sumakeris : rechercher sur Z-Library

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1

Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer

Xiangyi Guo, Beck, A.L., Zhihong Huang, Ning Duan, Campbell, J.C., Emerson, D., Sumakeris, J.J.

Journal:

IEEE Transactions on Electron Devices

Année:

2006

Langue:

english

Fichier:

PDF, 951 KB

english, 2006

2

Study of reverse dark current in 4H-SiC avalanche photodiodes

Xiangyi Guo, Beck, A.L., Xiaowei Li, Campbell, J.C., Emerson, D., Sumakeris, J.

Journal:

IEEE Journal of Quantum Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 756 KB

english, 2005

3

Structure of Carrot Defects in 4H-SiC Epilayers

Zhang, X., Ha, Seo Young, Benamara, M., Skowronski, Marek, Sumakeris, Joseph J., Ryu, Sei Hyung, Paisley, Michael J., O'Loughlin, Michael J.

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 5.62 MB

english, 2006

4

Dislocation Characterization in 4H-SiC Crystals

Sumakeris, Joseph J., Leonard, R.T., Deyneka, Eugene, Khlebnikov, Yuri, Powell, Adrian R., Seaman, Jeff, Paisley, Michael J., Tsevtkov, V., Guo, Jian Qiu, Yang, Yu, Dudley, Michael, Balkas, Elif

Journal:

Materials Science Forum

Année:

2016

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2016

5

Layer-by-layer epitaxial growth of GaN at low temperatures

J. Sumakeris, Z. Sitar, K.S. Ailey-Trent, K.L. More, R.F. Davis

Journal:

Thin Solid Films

Année:

1993

Langue:

english

Fichier:

PDF, 511 KB

english, 1993

6

Layer-by-layer growth of SiC at low temperatures

J.J. Sumakeris, L.B. Rowland, R.S. Kern, S. Tanaka, R.F. Davis

Journal:

Thin Solid Films

Année:

1993

Langue:

english

Fichier:

PDF, 580 KB

english, 1993

7

Structure of the carrot defect in 4H-SiC epitaxial layers

Benamara, M., Zhang, X., Skowronski, M., Ruterana, P., Nouet, G., Sumakeris, J. J., Paisley, M. J., OLoughlin, M. J.

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 645 KB

english, 2005

8

Design and Characterization of High-Voltage 4H-SiC p-IGBTs

Qingchun Zhang, Jun Wang, Jonas, C., Callanan, R., Sumakeris, J.J., Sei-Hyung Ryu, Das, M., Agarwal, A., Palmour, J., Huang, A.Q.

Journal:

IEEE Transactions on Electron Devices

Année:

2008

Langue:

english

Fichier:

PDF, 407 KB

english, 2008

9

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.

Journal:

IEEE Transactions on Electron Devices

Année:

2008

Langue:

english

Fichier:

PDF, 588 KB

english, 2008

10

Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain

Xiangyi Guo, Beck, A.L., Campbell, J.C., Emerson, D., Sumakeris, J.

Journal:

IEEE Journal of Quantum Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 530 KB

english, 2005

11

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules

Hull, B.A., Das, M.K., Richmond, J.T., Sumakeris, J.J., Leonard, R., Palmour, J.W., Leslie, S.

Année:

2006

Langue:

english

Fichier:

PDF, 4.41 MB

english, 2006

12

[IEEE 2002 International Microwave Symposium (MTT 2002) - Seattle, WA, USA (2-7 June 2002)] 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) - Applications of SiC MESFETs and GaN HEMTs in power amplifier design

Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Smith, T.J., Ring, Z., Sumakeris, J.J., Saxler, A.W., Milligan, J.W.

Année:

2002

Langue:

english

Fichier:

PDF, 334 KB

english, 2002

13

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Wide bandgap semiconductor devices and MMICs for RF power applications

Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Pribble, W.L., Smith, T.J., Ring, Z., Sumakeris, J.J., Saxler, A.W., Milligan, J.W.

Année:

2001

Langue:

english

Fichier:

PDF, 366 KB

english, 2001

14

12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC

Q. Zhang, M. Das, J. Sumakeris, R. Callanan, A. Agarwal

Journal:

IEEE Electron Device Letters

Année:

2008

Langue:

english

Fichier:

PDF, 391 KB

english, 2008

15

[IEEE 19th International Symposium on Power Semiconductor Devices and Ics - Jeju Island (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C

Oingchun Zhang,, Jonas, C., Callanan, R., Sumakeris, J., Das, M., Agarwal, A., Palmour, J., Sei-Hyung Ryu,, Jun Wang,, Alex Huang,

Année:

2007

Langue:

english

Fichier:

PDF, 1.65 MB

english, 2007

16

Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Zhang, X., Ha, S., Hanlumnyang, Y., Chou, C. H., Rodriguez, V., Skowronski, M., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J.

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 1.35 MB

english, 2007

17

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

Zhang, X., Skowronski, M., Liu, K. X., Stahlbush, R. E., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J.

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 796 KB

english, 2007

18

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

Zhang, Jon, Jonas, Charlotte, Sumakeris, Joseph J., Agarwal, Anant, Palmour, John W.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 328 KB

english, 2009

19

Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy

Liu, Kendrick, Stahlbush, Robert E, Caldwell, Joshua D, Hobart, Karl D, Kub, Francis J, Sumakeris, Joseph J

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 269 KB

english, 2006

20

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Kordina, Olle, Irvine, Kenneth G., Sumakeris, Joseph J., Kong, H.S., Paisley, Michael J., Carter Jr., Calvin H.

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 380 KB

1998

21

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Hull, Brett A., Sumakeris, Joseph J., O'Loughlin, Michael J., Zhang, Jon, Richmond, James, Powell, Adrian R., Paisley, Michael J., Tsvetkov, Valeri F., Hefner, A., Rivera, Angel

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2009

22

Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices

Sumakeris, J. J., Jenny, J. R., Powell, A. R.

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 478 KB

english, 2005

23

Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael

Journal:

Journal of Crystal Growth

Année:

2015

Langue:

english

Fichier:

PDF, 2.15 MB

english, 2015

24

Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method

Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael

Journal:

Journal of Electronic Materials

Année:

2016

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2016

25

Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

Guo, Jian Qiu, Yang, Yu, Wu, Fang Zhen, Sumakeris, Joseph J., Leonard, R.T., Goue, O.Y., Raghothamachar, Balaji, Dudley, Michael

Journal:

Materials Science Forum

Année:

2016

Langue:

english

Fichier:

PDF, 666 KB

english, 2016

26

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

Leonard, R.T., Paisley, M.J., Bubel, S., Sumakeris, J.J., Powell, A.R., Khlebnikov, Y., Seaman, J.C., Ambati, J., Burk, Albert A., O’Loughlin, Michael J., Balkas, E.

Journal:

Materials Science Forum

Année:

2017

Langue:

english

Fichier:

PDF, 2.62 MB

english, 2017

27

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

St.G. Müller, M.F. Brady, A.A. Burk, H.McD. Hobgood, J.R. Jenny, R.T. Leonard, D.P. Malta, A.R. Powell, J.J. Sumakeris, V.F. Tsvetkov, C.H. Carter Jr.

Journal:

Superlattices and Microstructures

Année:

2006

Langue:

english

Fichier:

PDF, 841 KB

english, 2006

28

Drift-free 10-kV, 20-A 4H-SiC PiN diodes

Brett A. Hull, Mrinal K. Das, Joseph J. Sumakeris, James T. Richmond, Sumi Krishnaswami

Journal:

Journal of Electronic Materials

Année:

2005

Langue:

english

Fichier:

PDF, 259 KB

english, 2005

29

Planar defects in 4H-SiC PiN diodes

M. E. Twigg, R. E. Stahlbush, K. G. Irvine, J. J. Sumakeris, T. P. Chow, P. A. Lossee, L. Zhu

Journal:

Journal of Electronic Materials

Année:

2005

Langue:

english

Fichier:

PDF, 388 KB

english, 2005

30

Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

Weimin Si, Michael Dudley, Hua Shuang Kong, Joe Sumakeris, Calvin Carter

Journal:

Journal of Electronic Materials

Année:

1997

Langue:

english

Fichier:

PDF, 4.30 MB

english, 1997

31

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - High power, drift-free 4H-SiC pin diodes

Das, M.K., Sumakeris, J.J., Hull, B.A., Richmond, J., Krishnaswami, S., Powell, A.R.

Année:

2004

Langue:

english

Fichier:

PDF, 1.31 MB

english, 2004

32

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Sumakeris, Joseph J., Bergman, J. Peder, Das, Mrinal K., Hallin, Christer, Hull, Brett A., Janzén, Erik, Lendenmann, H., O'Loughlin, Michael J., Paisley, Michael J., Ha, Seo Young, Skowronski, Marek,

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2006

33

Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers

Huh, S. W., Chung, H. J., Benamara, M., Skowronski, M., Sumakeris, J. J., Paisley, M. J.

Journal:

Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 683 KB

english, 2004

34

[IEEE Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting. - Seattle, WA, USA (3-7 Oct. 2004)] Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting. - Characterization of SiC PiN diode forward bias degradation

Hefner, A., McNutt, T., Akuffo, A., Singh, R., Ellenwood, C., Berning, D., Das, M.K., Sumakeris, J.J., Stahlbush, R.

Année:

2004

Langue:

english

Fichier:

PDF, 929 KB

english, 2004

35

Lifetime-limiting defects in n[sup −] 4H-SiC epilayers

Klein, P. B., Shanabrook, B. V., Huh, S. W., Polyakov, A. Y., Skowronski, M., Sumakeris, J. J., O’Loughlin, M. J.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 334 KB

english, 2006

36

[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Latest advances in high voltage, drift free, 4H-SiC PiN diodes

Dus, M.K., Sumakeris, J.J., Krishnaswami, S., Paisley, M.J., Agarwal, A.K., Powell, A.

Année:

2003

Langue:

english

Fichier:

PDF, 117 KB

english, 2003

37

Cross-sectional structure of carrot defects in 4H–SiC epilayers

Zhang, X., Ha, S., Benamara, M., Skowronski, M., O’Loughlin, M. J., Sumakeris, J. J.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 370 KB

english, 2004

38

Stacking fault formation in SiC p-i-n diodes of (11-20) orientation

Ha, S., Hu, K., Skowronski, M., Sumakeris, J. J., Paisley, M. J., Das, M. K.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 376 KB

english, 2004

39

[IEEE 56th Annual Device Research Conference Digest - Charlottesville, VA, USA (22-24 June 1998)] 56th Annual Device Research Conference Digest (Cat. No.98TH8373) - SiC MESFET with output power of 50 watts CW at S-band

Sadler, R.A., Allen, S.T., Alcorn, T.S., Pribble, W.L., Sumakeris, J., Palmour, J.W., Kehias, L.T.

Année:

1998

Fichier:

PDF, 285 KB

1998

40

Diodes

Ha, S., Skowronski, M., Sumakeris, J. J., Paisley, M. J., Das, M. K.

Journal:

Physical Review Letters

Année:

2004

Langue:

english

Fichier:

PDF, 774 KB

english, 2004

41

HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES

DAS, MRINAL K., SUMAKERIS, JOSEPH J., HULL, BRETT A., RICHMOND, JIM, KRISHNASWAMI, SUMI, POWELL, ADRIAN R.

Journal:

International Journal of High Speed Electronics and Systems

Année:

2004

Langue:

english

Fichier:

PDF, 404 KB

english, 2004

42

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

Sriram, Saptharishi, Ward, A., Janke, C., Alcorn, T.S., Hagleitner, H., Henning, Jason, Wieber, K., Jenny, Jason R., Sumakeris, Joseph J., Allen, S.T.

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 305 KB

english, 2004

43

A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

Das, Mrinal K., Zhang, Jon, Callanan, Robert, Capell, Craig, Clayton, Jack, Donofrio, Matthew, Haney, Sarah K., Husna, Fatima, Jonas, Charlotte, Richmond, James, Sumakeris, Joseph J.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 417 KB

english, 2009

44

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Sumakeris, Joseph J., Hull, Brett A., O'Loughlin, Michael J., Skowronski, Marek, Balakrishna, Vijay

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 263 KB

english, 2007

45

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

Das, Mrinal K., Sumakeris, Joseph J., Hull, Brett A., Richmond, James, Krishnaswami, Sumi, Powell, Adrian R.

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 406 KB

english, 2005

46

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

Huh, Sung Wook, Sumakeris, Joseph J., Polyakov, A.Y., Skowronski, Marek, Klein, P.B., Shanabrook, B.V., O'Loughlin, Michael J.

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 224 KB

english, 2006

47

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

Hull, Brett A., Das, Mrinal K., Richmond, James, Heath, Bradley, Sumakeris, Joseph J., Geil, Bruce, Scozzie, Charles J.

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 2.58 MB

english, 2006

48

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Das, Mrinal K., Sumakeris, Joseph J., Hull, Brett A., Richmond, James

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 407 KB

english, 2006

49

Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces

Sumakeris, Joseph John, Hull, Brett A., O'Loughlin, Michael J., Ha, S., Skowronski, Marek, Palmour, John W., Carter, Calvin H.

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 242 KB

english, 2006

50

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

O'Loughlin, Michael, Irvine, K. G., Sumakeris, J. J., Armentrout, M. H., Hull, B. A., Hallin, C., Burk, A. A.

Journal:

MRS Proceedings

Année:

2008

Langue:

english

Fichier:

PDF, 173 KB

english, 2008