[IEEE 19th International Symposium on Power Semiconductor Devices and Ics - Jeju Island (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C
Oingchun Zhang,, Jonas, C., Callanan, R., Sumakeris, J., Das, M., Agarwal, A., Palmour, J., Sei-Hyung Ryu,, Jun Wang,, Alex Huang,Année:
2007
Langue:
english
DOI:
10.1109/ispsd.2007.4294987
Fichier:
PDF, 1.65 MB
english, 2007
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