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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, Joseph J., Bergman, J. Peder, Das, Mrinal K., Hallin, Christer, Hull, Brett A., Janzén, Erik, Lendenmann, H., O'Loughlin, Michael J., Paisley, Michael J., Ha, Seo Young, Skowronski, Marek,Volume:
527-529
Année:
2006
Langue:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.141
Fichier:
PDF, 1.06 MB
english, 2006