Volume 369; Issue 1-2

Thin Solid Films

Volume 369; Issue 1-2
2

A novel measurement method of segregating adlayers in MBE

M. Oehme, M. Bauer, T. Grasby, E. Kasper
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 134 KB
english, 2000
4

Alternatives to thick MBE-grown relaxed SiGe buffers

T Hackbarth, H.-J Herzog, M Zeuner, G Höck, E.A Fitzgerald, M Bulsara, C Rosenblad, H von Känel
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 287 KB
english, 2000
5

Relaxed SiGe buffers with thicknesses below 0.1 μm

M. Bauer, K. Lyutovich, M. Oehme, E. Kasper, H.-J. Herzog, F. Ernst
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 597 KB
english, 2000
6

In situ characterization of thin Si1−xGex films on Si(100) by spectroscopic ellipsometry

Housei Akazawa
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 207 KB
english, 2000
9

Heteroepitaxial growth of SiGe films and heavy B doping by ion-beam sputtering

K Sasaki, Y Nabetani, H Miyashita, T Hata
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 255 KB
english, 2000
11

A novel structure in Ge/Si epilayers grown at low temperature

H.H Cheng, C.T Chia, V.A Markov, X.J Guo, C.C Chen, Y.H Peng, C.H Kuan
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 1.47 MB
english, 2000
13

Atomic layer doping of SiGe – fundamentals and device applications

B. Tillack, B. Heinemann, D. Knoll
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 309 KB
english, 2000
16

Carrier activation process in As+ implanted relaxed Si1−xGex alloys

T Irisawa, T Ueno, S Yamaguchi, K Nakagawa, M Miyao, Y Shiraki
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 179 KB
english, 2000
19

Synthesis of SiGeC layers by ion implantation of Ge and C

H Kurata, M Ohfuti, T Futatsugi
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 260 KB
english, 2000
20

Segregation and diffusion of impurities from doped Si1−xGex films into silicon

S Kobayashi, T Aoki, N Mikoshiba, M Sakuraba, T Matsuura, J Murota
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 203 KB
english, 2000
21

Enhancement of thermal diffusion of delta-doped Sb in SiGe

K. Nakagawa, H. Kojima, N. Sugii, S. Yamaguchi, M. Miyao
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 200 KB
english, 2000
22

Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si2H6 and PH3

F Hirose
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 184 KB
english, 2000
23

Epitaxial silicide interfaces in microelectronics

R.T. Tung, S. Ohmi
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 739 KB
english, 2000
24

Growth of epitaxial CoSi2 for contacts of ultra-thin SOI MOSFETs

Kunihiro Sakamoto, Tatsuro Maeda, Masataka Hasegawa
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 347 KB
english, 2000
25

The effect of elevated silicon substrate temperature on TiSi2 formatio from a Ti film

K Ezoe, T Yamamoto, K Ishii, S Matsumoto
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 289 KB
english, 2000
27

Growth of Mn doped epitaxial β-FeSi2 films on Si(001) substrates by reactive deposition epitaxy

K. Takakura, T. Suemasu, F. Hasegawa
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 244 KB
english, 2000
28

SiC/Si heteroepitaxial growth

Makoto Kitabatake
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 1.17 MB
english, 2000
30

Gas-source MBE of SiC/Si using monomethylsilane

Hideki Nakazawa, Maki Suemitsu, Seiji Asami
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 196 KB
english, 2000
31

Preface

Yukio Yasuda, Yasuhiro Shiraki
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 42 KB
english, 2000
32

New kinetic growth instabilities in Si(001) homoepitaxy

C Schelling, G Springholz, F Schäffler
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 265 KB
english, 2000
33

RHEED analysis of twinned homoepitaxial layers grown on Si(111)√3×√3-B

H Hibino, T Kawamura, T Ogino
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 301 KB
english, 2000
35

Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100)

Masanori Shinohara, Michio Niwano, Yoichiro Neo, Kuniyoshi Yokoo
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 236 KB
english, 2000
36

Dynamics of surface phase separation on patterned substrates by molecular beam epitaxy

Yoshihisa Enomoto
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 523 KB
english, 2000
38

Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS

F Rosei, N Motta, A Sgarlata, G Capellini, F Boscherini
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 335 KB
english, 2000
39

Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes

K Eberl, O.G Schmidt, R Duschl, O Kienzle, E Ernst, Y Rau
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 352 KB
english, 2000
40

Step bunching and correlated SiGe nanostructures on Si(113)

K Brunner, J Zhu, G Abstreiter, O Kienzle, F Ernst
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 494 KB
english, 2000
42

Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates

G Jin, J.L Liu, Y.H Luo, K.L Wang
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 344 KB
english, 2000
44

Nanostructures in silicon devices

I Eisele, W Hansch
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 1.99 MB
english, 2000
47

Analysis of single Si atoms deposited on the Si(111)7×7 surface

H Uchida, S Watanabe, M Mase, H Kuramochi, M Aono
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 450 KB
english, 2000
49

Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer

H Takamiya, M Miura, N Usami, T Hattori, Y Shiraki
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 244 KB
english, 2000
50

Positioning of self-assembling Ge islands on Si(111) mesas by using atomic steps

Hiroo Omi, Toshio Ogino
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 335 KB
english, 2000
52

Growth temperature dependence on the formation of carbon-induced Ge quantum dots

J.Y. Kim, S.H. Ihm, J.H. Seok, C.H. Lee, Y.H. Lee, E.-K. Suh, H.J. Lee
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 312 KB
english, 2000
54

Formation process and ordering of self-assembled Ge islands

M Miura, J.M Hartmann, J Zhang, B Joyce, Y Shiraki
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 224 KB
english, 2000
57

Nucleation and growth of Ge on Si(111) in solid phase epitaxy

I Suzumura, M Okada, A Muto, Y Torige, H Ikeda, A Sakai, S Zaima, Y Yasuda
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 424 KB
english, 2000
59

Formation of relaxed SiGe films on Si by selective epitaxial growth

K Kawaguchi, N Usami, Y Shiraki
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 252 KB
english, 2000
61

Comparison of SiGe and SiGe:C heterojunction bipolar transistors

D Knoll, B Heinemann, K.-E Ehwald, B Tillack, P Schley, H.J Osten
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 533 KB
english, 2000
65

ESR investigations of modulation-doped Si/SiGe quantum wells

N. Sandersfeld, W. Jantsch, Z. Wilamowski, F. Schäffler
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 136 KB
english, 2000
66

Schottky gating high mobility Si/Si1−xGex 2D electron systems

R.B Dunford, N Griffin, D.J Paul, M Pepper, D.J Robbins, A.C Churchill, W.Y Leong
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 203 KB
english, 2000
68

Si/SiGe n-type inverted modulation doping using ion implantation

A. Ahmed, R.B. Dunford, D.J. Paul, M. Pepper, A.C. Churchill, D.J. Robbins, A.J. Pidduck
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 191 KB
english, 2000
70

Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures

S Madhavi, V Venkataraman
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 227 KB
english, 2000
72

Heteroepitaxial growth of SrO on hydrogen-terminated Si(100) surface

Hidehito Asaoka, Koichiro Saiki, Atushi Koma, Hiroyuki Yamamoto
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 201 KB
english, 2000
73

A study on the local bonding structures of oxidized Si(111) surfaces

Kenji Sato, Yasuyuki Nakagawa, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 153 KB
english, 2000
74

Strain near SiO2–Si interface revealed by X-ray diffraction intensity enhancement

T. Emoto, K. Akimoto, Y. Ishikawa, A. Ichimiya, A. Tanikawa
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 182 KB
english, 2000
75

Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces

J. Schulte, J. Ushio, T. Maruizumi
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 168 KB
english, 2000
76

Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference

K Prabhakaran, F Maeda, Y Watanabe, T Ogino
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 201 KB
english, 2000
78

Si/SiGe/Si pMOS Performance - alloy scattering and other considerations

T.E. Whall, E.H.C. Parker
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 758 KB
english, 2000
79

High-speed transport in Si/Si1−x−yGexCy heterostructures

M. Mühlberger, C. Schelling, N. Sandersfeld, H. Seyringer, F. Schäffler
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 412 KB
english, 2000
81

Strained Si1−xGex graded channel PMOSFET grown by UHVCVD

Chia Yi Su, San Lein Wu, Shoou Jinn Chang, Liang Po Chen
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 210 KB
english, 2000
82

Doped vs. undoped Si1−x−yGexCy layers in sub-100 nm vertical p-channel MOSFETs

Min Yang, J.C Sturm
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 252 KB
english, 2000
86

A vertical MOS-gated Esaki tunneling transistor in silicon

W Hansch, C Fink, J Schulze, I Eisele
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 160 KB
english, 2000
87

Investigation of the emitter structure in SiGe/Si resonant tunneling structures

G Dehlinger, U Gennser, D Grützmacher, T Ihn, E Müller, K Ensslin
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 203 KB
english, 2000
88

Band ordering of the pseudomorphic Si1−xGex/Si heterostructure: the fundamental role of excitons

C Penn, G Bauer, F Schäffler, S Glutsch
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 207 KB
english, 2000
89

Photoluminescence characterization of erbium doped Si1−yCy alloys grown by MBE

M Markmann, E Neufeld, K Brunner, G Abstreiter, Ch Buchal
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 166 KB
english, 2000
90

Field-enhanced Stokes shifts in strained Si1−yCy/Si(001) quantum wells

Y. Sugawara, S. Fukatsu, K. Brunner, K. Eberl
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 160 KB
english, 2000
91

Growth and characterization of 70Gen/74Gen isotope superlattices

K. Morita, K.M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki, E.E. Haller
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 228 KB
english, 2000
92

Structural and optical properties of Si/Si1−xGex wires

Y Zhuang, C Schelling, J Stangl, C Penn, S Senz, F Schäffler, T Roch, A Daniel, J Grenzer, U Pietsch, G Bauer
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 285 KB
english, 2000
95

Anomalous surface absorption band at 1.2 eV in Si1−xGex alloy-based structures

Y Kishimoto, K Kawamoto, S Fukatsu
Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 161 KB
english, 2000
98

Index

Journal:
Thin Solid Films
Année:
2000
Fichier:
PDF, 45 KB
2000
99

Index

Journal:
Thin Solid Films
Année:
2000
Langue:
english
Fichier:
PDF, 116 KB
english, 2000