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Volume 42; Issue 12

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Solid-State Electronics
Volume 42; Issue 12

Solid-State Electronics

Volume 42; Issue 12

1

Editorial

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 63 KB

english, 1998

2

GaN based transistors for high power applications

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 322 KB

english, 1998

3

Material requirements for high voltage, high power IGBT devices

R. Zehringer, A. Stuck, T. Lang

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 1.13 MB

english, 1998

4

A review of junction field effect transistors for high-temperature and high-power electronics

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 284 KB

english, 1998

5

Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

P.G Neudeck, W Huang, M Dudley

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 410 KB

english, 1998

6

4H-SiC power devices for use in power electronic motor control

J.B Casady, A.K Agarwal, S Seshadri, R.R Siergiej, L.B Rowland, M.F MacMillan, D.C Sheridan, P.A Sanger, C.D Brandt

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 850 KB

english, 1998

7

Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

F Ren, C.R Abernathy, J.D MacKenzie, B.P Gila, S.J Pearton, M Hong, M.A Marcus, M.J Schurman, A.G Baca, R.J Shul

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 236 KB

english, 1998

8

Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy

R Hickman, J.M Van Hove, P.P Chow, J.J Klaassen, A.M Wowchack, C.J Polley

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 276 KB

english, 1998

9

Influence of silicon crystal defects and contamination on the electrical behavior of power devices

H.-J Schulze, B.O Kolbesen

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 1.92 MB

english, 1998

10

Multilayer diamond heat spreaders for electronic power devices

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 862 KB

english, 1998

11

Surface and interface properties of PdCr/SiC Schottky diode gas sensor annealed at 425°C

Liang-Yu Chen, Gary W Hunter, Philip G Neudeck, Dak Knight

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 298 KB

english, 1998

12

Hydrogen “doped” thin film diamond field effect transistors for high power applications

Hui Jin Looi, Lisa Y.S Pang, John S Foord, Richard B Jackman

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 461 KB

english, 1998

13

Electronic properties of diamond for high-power device applications

J.E Yater, A Shih, R Abrams

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 379 KB

english, 1998

14

High frequency capacitance measurements on metal–insulator–semiconductor structures in thermal non-equilibrium condition

M. Sadeghi, A. Jauhiainen, B. Liss, E.Ö. Sveinbjörnsson, O. Engström

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 277 KB

english, 1998

15

Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

R.F Kopf, R.A Hamm, R.J Malik, R.W Ryan, J Burm, A Tate, Y.-K Chen, G Georgiou, D.V Lang, M Geva, F Ren

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 1.81 MB

english, 1998

16

Design methodology and simulation tool for floating ring termination technique

Evgueniy Stefanov, Georges Charitat, Luis Bailon

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 491 KB

english, 1998

17

Comparison of plasma etch techniques for III–V nitrides

R.J Shul, G.A Vawter, C.G Willison, M.M Bridges, J.W Lee, S.J Pearton, C.R Abernathy

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 570 KB

english, 1998

18

High-density plasma etch selectivity for the III–V nitrides

R.J Shul, C.G Willison, M.M Bridges, J Han, J.W Lee, S.J Pearton, C.R Abernathy, J.D MacKenzie, S.M Donovan

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 314 KB

english, 1998

19

Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas

Hyun Cho, C.B Vartuli, C.R Abernathy, S.M Donovan, S.J Pearton, R.J Shul, J Han

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 590 KB

english, 1998

20

ICP etching of SiC

J.J Wang, E.S Lambers, S.J Pearton, M Ostling, C.-M Zetterling, J.M Grow, F Ren, R.J Shul

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 254 KB

english, 1998

21

Nitride based high power devices: design and fabrication issues

Z.Z Bandić, E.C Piquette, P.M Bridger, R.A Beach, T.F Kuech, T.C McGill

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 440 KB

english, 1998

22

Voids in silicon power devices

V. Raineri, M. Saggio, F. Frisina, E. Rimini

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 1.16 MB

english, 1998

23

Thermo-mechanical simulation of a multichip press-packed IGBT

A Pirondi, G Nicoletto, P Cova, M Pasqualetti, M Portesine, P.E Zani

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 891 KB

english, 1998

24

MicroRaman study of crystallographic defects in SiC crystals

E. Martı́n, J. Jiménez, M. Chafai

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 314 KB

english, 1998

25

Magnetron sputtering synthesis of silicon–carbon films: structural and optical characterization

S Kerdiles, R Rizk, A Pérez-Rodrı́guez, B Garrido, O González-Varona, L Calvo-Barrio, J.R Morante

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 278 KB

english, 1998

26

Supersonic jet epitaxy of silicon carbide on silicon using methylsilane

S.A. Ustin, C. Long, W. Ho

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 312 KB

english, 1998

27

High temperature ohmic contacts to 3C–silicon carbide films

C Jacob, P Pirouz, H.-I Kuo, M Mehregany

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 470 KB

english, 1998

28

A novel technique for RTP annealing of compound semiconductors

M Fu, V Sarvepalli, R.K Singh, C.R Abernathy, X Cao, S.J Pearton, J.A Sekhar

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 550 KB

english, 1998

29

Megawatt solid-state electronics

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1998

30

Index

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 257 KB

english, 1998

31

Index

Journal:

Solid-State Electronics

Année:

1998

Fichier:

PDF, 94 KB

1998