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Volume 809

MRS Proceedings

Volume 809

1

High-Performance SiGe MODFET Technology

Koester, S. J., Chu, J. O., Saenger, K. L., Ouyang, Q. C., Ott, J.A., Canaperi, D. F., Tornello, J. A., Jahnes, C.V., Steen, S. E.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 623 KB

english, 2004

2

Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates

Cai, J., Mooney, P. M., Christiansen, S. H., Chen, H., Chu, J. O., Ott, J. A.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2004

3

Strained Channel Transistor Using Strain Field Induced By Source and Drain Stressors

Yeo, Yee-Chia, Sun, Jisong, Ong, Eng Hong

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 168 KB

english, 2004

4

Physical characterization of HfO2 deposited on Ge substrates by MOCVD

Elshocht, S. Van, Brijs, B., Caymax, M., Conard, T., Gendt, S. De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., Teerlinck, I., Steenbergen, J. Van, Zhao, C., Heyns, M.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 412 KB

english, 2004

5

Heteroepitaxial growth and characterization of Ge and SiXGe1−X films on patterned silicon structures

Vanamu, Ganesh, Datye, Abhaya K., Zaidi, Saleem H.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 1.77 MB

english, 2004

6

Strained Si-on-Insulator Fabricated from Elastically-Relaxed Si/SiGe Structures

Mooney, P.M., Cohen, G.M., Chen, H., Chu, J.O., Klymko, N.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 311 KB

english, 2004

7

The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

Buca, D., Mörschbächer, M.J., Holländer, B., Luysberg, M., Loo, R., Caymax, M., Mantl, S.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 785 KB

english, 2004

8

Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator

Yin, Haizhou, Hobart, K.D., Shieh, S.R., Peterson, R.L., Duffy, T.S., Sturm, J.C.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 79 KB

english, 2004

9

Stress Metrology : The challenge for the next generation of engineered wafers

Tiberj, Antoine, Paillard, Vincent, Aulnette, Cécile, Daval, Nicolas, Bourdelle, Konstantin K., Moreau, Myriam, Kennard, Mark, Cayrefourcq, Ian

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 809 KB

english, 2004

10

Strain Mapping in SiGe by Visible Raman Spectroscopy

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 347 KB

english, 2004

11

Ultra-thin strain relaxed SiGe buffer layers with 40% Ge

Lyutovich, Klara, Kasper, Erich, Oehme, Michael

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 126 KB

english, 2004

12

Effect of Carbon on Diffusion of Boron in SiGe between 940 – 1050 °C

Karunaratne, Mudith S. A., Bonar, Janet M., Zhang, Jing, Willoughby, Arthur F. W.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 80 KB

english, 2004

13

Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes

Hartmann, J.M., Papon, A.M., Holliger, P., Rolland, G., Billon, T., Rouvière, M., Vivien, L., Laval, S.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2004

14

Optimizing SiGe HBTs technology using small-signal and high frequency noise device's modeling

Tartarin, J.G, Cibiel, G., Monroy, A., Goascoz, V. Le, Graffeuil, J.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 5.42 MB

english, 2004

15

(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers

Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 9.27 MB

english, 2004

16

Analysis of junctions formed in strained Si/SiGe substrates

Eneman, G., Simoen, E., Lauwers, A., Lindsay, R., Verheyen, P., Delhougne, R., Loo, R., Caymax, M., Meunier-Beillard, P., Demuynck, S., Meyer, K. De, Vandervorst, W.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 375 KB

english, 2004

17

Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy

Dobrosz, P., Bull, S.J., Olsen, S.H., O'Neill, A.G.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 183 KB

english, 2004

18

Atomically Controlled Impurity Doping in Si-Based CVD Epitaxial Growth

Murota, Junichi, Sakuraba, Masao, Tillack, Bernd

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 15.06 MB

english, 2004

19

High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

Mueller, Carl, Alterovitz, Samuel, Croke, Edward, Ponchak, George

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 149 KB

english, 2004

20

Phosphorus and Boron Implantation into (100) Germanium

Suh, Y. S., Carroll, M. S., Levy, R. A., Sahiner, A., King, C. A.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 144 KB

english, 2004

21

Modeling Dopant Diffusion in SiGe and SiGeC alloys

Pakfar, Ardechir, Holliger, Philippe, Poncet, Alain, Fellous, Cyril, Dutartre, Didier, Schwartzmann, Thierry, Jaouen, Hervé

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 70 KB

english, 2004

22

Diffusion of ion-implanted Boron and Silicon in Germanium

Uppal, Suresh, Willoughby, A. F. W., Bonar, J. M., cowern, N. E. B., Morris, R. J. H., Dowsett, M. G.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 115 KB

english, 2004

23

Arsenic diffusion in Si and Si0.9Ge0.1 alloys: Effect of defect injection

Uppal, Suresh, Bonar, J. M., Zhang, Jing, Willoughby, A. F. W.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 183 KB

english, 2004

24

Island Scaling Effects on Photoluminescence of Strained SiGe/Si (100)

Peterson, Rebecca L., Yin, Haizhou, Sturm, J. C.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 184 KB

english, 2004

25

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

Karunaratne, Mudith S. A., Bonar, Janet M., Zhang, Jing, Willoughby, Arthur F. W.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 85 KB

english, 2004

26

Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate

Chriqui, Yves, Largeau, Ludovic, Patriarche, Gilles, Saint-Girons, Guillaume, Bouchoule, Sophie, Bensahel, Daniel, Campidelli, Yves, Kermarrec, Olivier, Sagnes, Isabelle

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2004

27

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

Shoukri, Kareem M., Haddara, Yaser M., Knights, Andrew P., Coleman, Paul G., Rahman, Mohammad M., Tatsuyama, C.C.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 136 KB

english, 2004

28

Fabrication of Strained Silicon on Insulator (SSOI) by Direct Wafer Bonding Using Thin Relaxed SiGe Film as Virtual Substrate

Lee, J.J., Maa, J.S., Tweet, D. J., Hsu, S.T.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 633 KB

english, 2004

29

Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology

Letertre, F., Deguet, C., Richtarch, C., Faure, B., Hartmann, JM, Chieu, F., Beaumont, A., Dechamp, J., Morales, C., Allibert, F., Perreau, P., Pocas, S., Personnic, S., Lagahe-Blanchard, C., Ghyselen

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 156 KB

english, 2004

30

A Survey of Defects in Strained Si Layers

Bedell, S. W., Chen, H., Sadana, D. K., Fogel, K., Domenicucci, A.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 1.43 MB

english, 2004

31

Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters

L., Driscoll, S., Olsen, S., Chattopadhyay, A., O'Neill, K., Kwa, P., Dobrosz, S., Bull

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 120 KB

english, 2004

32

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

Nguyen, N. V., Maslar, J. E., Kim, Jin-Yong, Han, Jin-Ping, Park, Jin-Won, Chandler-Horowitz, D., Vogel, E. M.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 110 KB

english, 2004

33

SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices

Tezuka, Tsutomu, Mizuno, Tomohisa, Sugiyama, Naoharu, Nakaharai, Shu, Moriyama, Yoshihiko, Usuda, Koji, Numata, Toshinori, Hirashita, Norio, Maeda, Tatsuro, Takagi, Shin-ichi, Miyamura, Yoshiji, Toyod

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 709 KB

english, 2004

34

(Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices

Loo, R., Delhougne, R., Meunier-Beillard, P., Caymax, M., Verheyen, P., Eneman, G., Wolf, I. De, Janssens, T., Benedetti, A., Meyer, K. De, Vandervorst, W., Heyns, M.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 681 KB

english, 2004

35

Retarded Growth of Sputtered HfO2 Films on Germanium

Kita, Koji, Sasagawa, Masashi, Toyama, Masahiro, Kyuno, Kentaro, Toriumi, Akira

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 279 KB

english, 2004

36

Reduced Pressure - Chemical Vapor Deposition of high Ge content (20% - 55%) SiGe virtual substrates

Bogumilowicz, Y., Hartmann, J.M., Laugier, F., Rolland, G., Billon, T., Renard, V., Olshanetsky, E.B., Estibals, O., Kvon, Z.D., Portal, J.C.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 322 KB

english, 2004

37

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

Ghyselen, B., Bogumilowicz, Y., Aulnette, C., Abbadie, A., Osternaud, B., Besson, P., Daval, N., Andrieu, F., Cayrefourq, I., Moriceau, H., Ernst, T., Tiberj, A., Rayssac, O., Blondeau, B., Mazure, C.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 896 KB

english, 2004

38

Crystals (A Freshman Seminar): An Exercise on Cooperative and Peer Learning

Bokreta, M. Krimo, Santiago-Avilés, J. J.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 45 KB

english, 2004

39

The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I. De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, M., Maex, K., Cowern, N.E.B.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 127 KB

english, 2004

40

SiGe HBT/BiCMOS Technologies and their Applications to Communication ICs/LSIs

Oda, Katsuya, Washio, Katsuyoshi, Hashimoto, Takashi

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 407 KB

english, 2004

41

Atomic Force Microscopy Study of Conformal Sputtering in Strained Silicon Samples

Chao, Kuo-Jen, Goodman, Gary

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 496 KB

english, 2004

42

Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding

Maa, Jer-shen, Lee, Jong-Jan, Tweet, Douglas, Hsu, Sheng Teng

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 151 KB

english, 2004