Volume 693

MRS Proceedings

Volume 693

1

White Beam Synchrotron X-ray Topography and X-ray Diffraction Measurements of Epitaxial Lateral Overgrowth of GaN

Chen, W.M., McNally, P.J., Jacobs, K., Tuomi, T., Danilewsky, A.N., Lowney, D., Kanatharana, J., Knuuttila, L., Riikonen, J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2001

2

Low Resistance Non-Transparent ohmic Pt-contacts on p-GaN

Weimar, Andreas, Bader, Stefan, Brüderl, Georg, Kümmler, Volker

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 71 KB

english, 2001

3

Photoluminescence study of deep-level defects in undoped GaN

Reshchikov, M. A., Morkoç, H., Park, S. S., Lee, K. Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 107 KB

english, 2001

4

Infrared and Ultraviolet Raman Spectra of AlN Thin Films Grown on Si(111)

Naik, V. M., Haddad, D., Danylyuk, Y. V., Naik, R., Auner, G. W., Rimai, L., Weber, W. H., Uy, D.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 363 KB

english, 2001

5

Growth of Gallium Nitride Textured Films and Nanowires on Polycrystalline Substrates at sub-Atmospheric Pressures

Chandrasekaran, Hari, Sunkara, Mahendra K.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 3.01 MB

english, 2001

6

High-Temperature Hardness of Bulk Single-Crystal AlN

Yonenaga, Ichiro, Nikolaev, Andrey, Melnik, Yuriy, Dmitriev, Vladimir

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 58 KB

english, 2001

7

Defects Created by 25 keV Hydrogen Implantation in n-type GaN

Auret, F. D., Meyer, W. E., Laarhoven, H. A. van, Goodman, S. A., Legodi, M. J., Beaumont, B., Gibart, P.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 98 KB

english, 2001

8

Impact of In content on the structural and optical properties of (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy

Waltereit, Patrick, Speck, James S.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 107 KB

english, 2001

9

Theory of Electron Energy Loss Spectroscopy and its Application to Threading Edge Dislocations in GaN

Fall, C. J., Jones, R., Briddon, P. R., Blumenau, A. T., Frauenheim, T., Heggie, M. I.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 471 KB

english, 2001

10

Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments

Kim, J., Luo, B., Mehandru, R., Ren, F., Lee, K. P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Osinsky, A.V., Norris, P.E.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 100 KB

english, 2001

11

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

Luo, B., Kim, J., Mehandru, R., Ren, F., Lee, K. P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Kozhukhova, E.A., Osinsky, A.V., Norris, P.E.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 75 KB

english, 2001

12

High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes

Kinoshita, A., Hirayama, H., Ainoya, M., Yamabi, T., Hirata, A., Aoyagi, Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 95 KB

english, 2001

13

Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

Motogaito, Atsushi, Ohta, Keiichi, Hiramatsu, Kazumasa, Ohuchi, Youichiro, Tadatomo, Kazuyuki, Hamamura, Yutaka, Fukui, Kazutoshi

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 191 KB

english, 2001

14

Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy

Papadimitriou, D., Ptak, A.J., Korakakis, D., Giles, N.C., Myers, T.H.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 311 KB

english, 2001

15

Apriori Process-Property Relationships of GaN Epitaxial Growth in Ga/N/H/C/O Systems

Loukeris, Constantine, Khan, Shumaila, Takoudis, Christos G.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 52 KB

english, 2001

16

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

Xiu, X.Q., Zhang, R., Lu, D.Q., Gu, L., Shen, B., Shi, Y., Zheng, Y.D.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 241 KB

english, 2001

17

Band-gap engineering in amorphous/microcrystalline ScxGa1-xN.

Little, M. E., Kordesch, M. E.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 173 KB

english, 2001

18

Lateral Growth of InN on GaN/Sapphire

Yang, Fuh-Hsiang, Hwang, Jih-Hsien, Chen, Kuei-Hsien, Yang, Ying-Jay

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 335 KB

english, 2001

19

400-nm Band AlGaInN-Based High Power Laser Diodes

Asano, Takeharu, Takeya, Motonobu, Tojyo, Tsuyoshi, Ikeda, Shinro, Mizuno, Takashi, Ansai, Shinichi, Goto, Shu, Kijima, Satoru, Hino, Tomonori, Uchida, Shiro, Ikeda, Masao

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 305 KB

english, 2001

20

Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters

Hirayama, H., Yamanaka, T., Kinoshita, A., Hiraoka, K., Hirata, A., Aoyagi, Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 112 KB

english, 2001

21

Compositional and structural studies of amorphous GaN grown by ion-assisted deposition

Lanke, U. D., Koo, A., Ruck, B. J., Lee, H. K., Markwitz, A., Kennedy, V. J., Ariza, M. J., Jones, D. J., Rozière, J., Bittar, A., Trodahl, H. J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 208 KB

english, 2001

22

Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

Chen, Fei, Cartwright, A. N., Sweeney, Paul M., Cheung, M. C., Flynn, Jeffrey S., Keogh, David

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 81 KB

english, 2001

23

Nanobumps in InxAl1-xN/AlN/Sapphire System:A New Kind of Quantum Dots?

Danylyuk, Yuri, Romanov, Dmitri, Auner, Gregory

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 99 KB

english, 2001

24

Electrical and Optical Studies of Si-Implanted GaN

Fellows, James A., Yeo, Yung Kee, Hengehold, Robert L., Krasnobaev, Leonid

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 93 KB

english, 2001

25

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

Luo, B., Kim, J., Mehandru, R., Ren, F., Lee, K. P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Kozhukhova, E.A., Osinsky, A.V., Norris, P.E.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 206 KB

english, 2001

26

Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures with Vacuum Ultraviolet Spectroscopic Ellipsometry

Edwards, N.V., Lindquist, O.P.A., Madsen, L.D., Zollner, S., Järrehdahl, K., Cobet, C., Peters, S., Esser, N., Konkar, A., Aspnes, D. E.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 217 KB

english, 2001

27

Exciton Spectra of AlN Epitaxial Films

Onuma, T., Chichibu, S. F., Sota, T., Asai, K., Sumiya, S., Shibata, T., Tanaka, M.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 287 KB

english, 2001

28

In-Situ Rheed Observation of Mocvd-Gan Film Growth

Sumiya, Masatomo, Ogusu, Noritaka, Osada, Kouhei, Fuke, Shunro

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 748 KB

english, 2001

29

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Lu, Hai, Schaff, William J., Eastman, Lester F., Wood, Colin

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.04 MB

english, 2001

30

Conductivity, photoconductivity and optical properties of amorphous GaN films

Koo, A., Lanke, U. D., Ruck, B. J., Brown, S. A., Reeves, R., Liem, I., Bittar, A., Trodahl, H. J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 94 KB

english, 2001

31

Profiling electric fields around dislocations in GaN

Cherns, D., Jiao, C.G., Mokhtari, H.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2001

32

Optical properties of GaN with Ga and N polarity

Reshchikov, M. A., Huang, D., Yun, F., Visconti, P., King, T., Morkoç, H., Jasinski, J., Liliental-Weber, Z.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 434 KB

english, 2001

33

Mg related Defect Formation during MOVPE Growth of GaN based Films studied by Transmission Electron Microscopy

Kröger, Roland, Figge, Stephan, Böttcher, Tim, Ryder, Peter L., Hommel, Detlef

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 2.43 MB

english, 2001

34

Passive components on AlN for application in AlGaN/GaN power amplifiers

Jacobs, B., Straaten, B. Van, Kramer, M., Karouta, F., Hek, P. De, Suijker, E., Dijk, R. Van

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 81 KB

english, 2001

35

Reverse-annealing phenomenon during the high-temperature implantation of Ar+ into GaN

Usov, Igor O., Parikh, Nalin R., Thomson, Darren, Davis, Robert F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 135 KB

english, 2001

36

Evaluation of (In,Ga)N Films as Optical Absorption Filters for Application in Integrated Fluorescence Detection Micro-Bioanalytical Systems

Chediak, J. Alex, Kneissl, Michael, Sands, Timothy D.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 750 KB

english, 2001

37

Growth of High Al Concentration AlGaN for Solar Blind Photodetector Applications

Guo, Shiping, Pophristic, Milan, Ferguson, Ian, Peres, Boris, Lamarre, Phil, Tobin, Steve, Wong, Kwok, Reine, Marion, Sood, Ashok

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 112 KB

english, 2001

38

Production Scale Growth of AlGaN/GaN Field Effect Transistors

Gotthold, David, Gibb, Shawn, Peres, Boris, Ferguson, Ian, Palmer, Chris, Armour, Eric

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 107 KB

english, 2001

39

Electric Field Induced Heating and Energy Relaxation in GaN

Eckhause, T. A., Süzer, Ö., Kurdak, Ç., Yun, F., Morkoç, H.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 286 KB

english, 2001

40

Current spreading in AlGaN:Mg cladding layers of laser structures

Figge, Stephan, Böttcher, Tim, Zellweger, Christoph, Ilegems, Marc, Hommel, Detlef

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 83 KB

english, 2001

41

Palladium and Aluminum Gate Metals/Aluminum Nitride/Silicon Balanced Capacitors for Selective Hydrogen Sensing

Prakasam, H. E., Serina, F., Huang, C., Auner, G. W., Rimai, L., Ng, S., Naik, R.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 63 KB

english, 2001

42

Effect of Ge in Cl2 Plasma for Reactive Ion Etching of GaN

Urushido, Tatsuhiro, Yoshida, Harumasa, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 103 KB

english, 2001

43

Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide

Kim, J., Gila, B. P., Mehandru, R., Johnson, J.W., Shin, J. H., Lee, K.P., Luo, B., Onstine, A., Abernathy, C. R., Pearton, S.J., Ren, F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 432 KB

english, 2001

44

Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes

Allums, K., Luo, B., Mehandru, R., Gila, B. P., Dwivedi, R., Fogarty, T.N., Wilkins, R., Abernathy, C. R., Ren, F., Pearton, S. J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 89 KB

english, 2001

45

Low-Resistance Electrical Contacts to p-Type GaN by Using InxGa1-xN Cap Layers

Gessmann, Th., Li, Y.-L., Graff, J. W., Schubert, E. F., Sheu, J. K.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 495 KB

english, 2001

46

Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN

Yang, Qing, Feick, Henning, Armitage, Rob, Weber, Eicke R.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 87 KB

english, 2001

47

Tailorable Rectification: A study of Vertical Transport in AlGaN/GaN Heterostructures

Singh, Madhusudan, Singh, Jaspirt, Mishra, Umesh

Journal:

MRS Proceedings

Année:

2001

Fichier:

PDF, 388 KB

2001

48

Chemical, Electrical, and Structural Properties of Au/Pd Contacts on Chemical Vapor Cleaned p-type GaN Surfaces

Hartlieb, P. J., Roskowski, A., Rodriguez, B. J., Nemanich, R. J., Davis, R. F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 905 KB

english, 2001

49

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Shen, B., Li, W. P., Wang, X. S., Yan, F., Zhang, R., Bi, Z. X., Shi, Y., Liu, Z. G., Zheng, Y. D., Someya, T., Arakawa, Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 90 KB

english, 2001

50

Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation

Zhou, Y.G., Shen, B., Yu, H.Q., Liu, J., Zhou, H.M., Zhang, R., Shi, Y., Zheng, Y.D., Someya, T., Arakawa, Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 106 KB

english, 2001

51

TEM assessment of GaN/AlGaN/TiAlTiAu and GaN/AlGaN/TiAlPdAu ohmic contacts

Fay, M W, Moldovan, G, Harrison, I, Birbeck, J C, Hughes, B T, Uren, M J, Martin, T, Brown, P D

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1020 KB

english, 2001

52

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C. R., Pearton, S.J., Ren, F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 66 KB

english, 2001

53

Band Gap Shift of GaN under Uniaxial Strain Compression

Peng, H. Y., McCluskey, M. D., Gupta, Y. M., Kneissl, M., Johnson, N. M.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 68 KB

english, 2001

54

Novel Sensor Applications of group-III nitrides

Eickhoff, M., Ambacher, O., Steinhoff, G., Schalwig, J., Neuberger, R., Palacios, T., Monroy, E., Calle, F., Müller, G., Stutzmann, M.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 134 KB

english, 2001

55

Improved Mobilities and Resistivities in Modulation-Doped P-type AlGaN / GaN Superlattices

Waldron, Erik L., Graff, John W., Schubert, E. Fred, Dabiran, Amir M.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 171 KB

english, 2001

56

High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 66 KB

english, 2001

57

Self-Heating Effects in High-Power AlGaN/GaN HFETs

Kuball, M., Uren, M.J., Hayes, J.M., Martin, T., Birbeck, J.C.H., Balmer, R.S., Hughes, B.T.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 98 KB

english, 2001

58

A High-Power AlGaN/GaN Hetero Field-Effect Transistor

Yoshida, Seikoh, Ishii, Hirotatsu

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 592 KB

english, 2001

59

Back-Doping Design in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

Maeda, Narihiko, Tsubaki, Kotaro, Saitoh, Tadashi, Kobayashi, Naoki

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 57 KB

english, 2001

60

Transparent ZnO-Based Ohmic Contact to p-GaN

Kaminska, E., Piotrowska, A., Golaszewska, K., Guziewicz, M., Kruszka, R., Kudla, A., Ochalski, T., Barcz, A., Dietl, T., Matsukura, F., Sawicki, M., Wawro, A., Zielinski, M., Jasinski, J., Liliental-

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 662 KB

english, 2001

61

X-ray Photoemission Determination of the Surface Fermi Level Motion and Pinning on n- and p-GaN during the Formation of Au, Ni, and Ti Metal Contacts

Rickert, Kimberly A., Kim, Jong Kyu, Lee, Jong-Lam, Himpsel, Franz J., Ellis, Arthur B., Kuech, T. F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 48 KB

english, 2001

62

Photoluminescence of Zn-doped GaN grown by HVPE

Reshchikov, M. A., Huang, D., Morkoç, H., Molnar, R. J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 168 KB

english, 2001

63

Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

As, D. J., Köhler, U., Lischka, K.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 214 KB

english, 2001

64

Vibrational Spectroscopy of GaN:Mg Under Pressure

McCluskey, M.D., Zhuravlev, K.K., Kneissl, M., Wong, W., Treat, D., Limpijumnong, S., Walle, C.G. Van de, Johnson, N.M.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 61 KB

english, 2001

65

Novel conguration of Mg-H complexes in GaN

Limpijumnong, Sukit, Northrup, John E., Walle, Chris G. Van de

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 185 KB

english, 2001

66

GaNxAs1-x Growth by Molecular Beam Epitaxy with Dispersive Nitrogen

Wang, S.Z., Yoon, S.F., Ng, T.K., Loke, W.K., Fan, W.J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 229 KB

english, 2001

67

Surface Instability and Associated Roughness of Pendeo-epitaxy GaN (0001) Films Grown via Metalorganic Vapor Phase Epitaxy

Roskowski, Amy M., Miraglia, Peter Q., Preble, Edward A., Einfeldt, Sven, Davis, Robert F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 379 KB

english, 2001

68

Three-Dimensional Modeling of the High Pressure Organometallic Chemical Vapor Deposition of InN using Trimethylindium and Ammonia

McCall, Sonya D., Bachmann, Klaus J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 327 KB

english, 2001

69

Layer by Layer Growth of GaN Films by Low Temperature Cyclic Process

Sanguino, P., Koynov, S., Niehusl, M., Melo, L. V., Schwarz, R., Alves, H., Meyer, B. K.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 414 KB

english, 2001

70

High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes

Kinoshita, A., Hirayama, H., Ainoya, M., Yamabi, T., Hirata, A., Aoyagi, Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 95 KB

english, 2001

71

Structural and Optical Characteristics of Laterally Overgrown GaN Pyramids on (111) Si Substrate

Cho, Yong-Hoon, Kim, H. M., Kang, T. W., Song, J. J., Yang, W.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.58 MB

english, 2001

72

Growth of Carbon-Nitrogen Films with a Broad Beam RF Ion Source

Ingram, David C., Lanter, William C., DeJoseph, Charles A., Kayani, Asghar

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 85 KB

english, 2001

73

Growth of GaN epilayers on Si(111) substrates using multiple buffer layers

Hageman, P.R., Haffouz, S., Grzegorczk, A., Kirilyuk, V., Larsen, P.K.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 708 KB

english, 2001

74

Double pendeo-epitaxial growth of GaN films with low density of threading dislocation

Hong, Y. K., Jung, H. S., Hong, C-H., Kim, M.H., Leem, S-J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 303 KB

english, 2001

75

V - III ratio effect on Cubic GaN Grown by RF Plasma Assisted Gas Source MBE

Sung, Li-Wei, Lin, Hao-Hsiung, Chia, Chih-Ta

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 151 KB

english, 2001

76

Microstructure of ELO-GaN Layers Grown by Hydride Vapor Phase Epitaxy

Gradecak, Silvija, Wagner, Volker, Ilegems, Marc, Bobard, Fabienne, Stadelmann, Pierre

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.91 MB

english, 2001

77

Quantitative Defect Analysis of GaN Thick Films by TEM and AFM

Bhaskara, Praveena, Sung, Changmo, Bliss, David, Suscavage, Michael

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 459 KB

english, 2001

78

Growth of GaN:Sb MBE-Layers

Cristea, P., Ebling, D.G., Benz, K.W.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 256 KB

english, 2001

79

Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy

Kim, Hyonju, Andersson, T. G., Södervall, U., Jäger, C., Jäger, W., Albrecht, M., Bösker, G., Stolwijk, N. A.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 880 KB

english, 2001

80

Layer Thickness Dependence of Strain in GaN grown by HVPE

Sim, Gyu Gwang, Yu, P. W., Reynolds, D. C., Look, D. C., Kim, Sang Soo, Noh, D.Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 100 KB

english, 2001

81

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

Fedler, F., Stemmer, J., Hauenstein, R. J., Rotter, T., Sanchez, A. M., Ponce, A., Molina, S. I., Mistele, D., Klausing, H., Semchinova, O., Aderhold, J., Graul, J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 364 KB

english, 2001

82

Characterization Of G-R Noise In GaN Films Grown By RF-MBE On Intermediate-Temperature Buffer Layers

Fong, W.K., Leung, B.H., Zhu, C.F., Surya, Charles

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 75 KB

english, 2001

83

Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)

Lee, C. D., Feenstra, R. M., Shigiltchoff, O., Devatya, R. P., Choyke, W. J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2001

84

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

Yamaguchi, Tomohiro, Saito, Yoshiki, Kano, Kenji, Muramatsu, Tomo, Araki, Tsutomu, Nanishi, Yasushi, Teraguchi, Nobuaki, Suzuki, Akira

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 189 KB

english, 2001

85

Investigation of the Optimum Growth Conditions of Wide-Bandgap Quaternary InAlGaN for UV-LEDs

Yamabi, T., Kinoshita, A., Hirayama, H., Ainoya, M., Hirata, A., Araki, T., Nanishi, Y., Aoyagi, Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 92 KB

english, 2001

86

Optical and Structural Properties of Mn-Implanted GaN Films

Xu, J., Li, J., Zhang, R., Xiu, X.Q., Lu, D.Q., Gu, S.L., Shen, B., Shi, Y., Zheng, Y. D.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 118 KB

english, 2001

87

Electroluminescence And Photoluminescence Studies Of A Nitride-Rich GaN1-XPx SQW Structure LED Grown By Laser-Assisted Metal-Organic Chemical Vapor Deposition

Kikawa, Junjiroh, Yoshida, Seikoh, Itoh, Yoshiteru

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 143 KB

english, 2001

88

New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth

Shibata, Tomohiko, Kida, Yoshihiro, Miyake, Hideto, Hiramatsu, Kazumasa, Asai, Keiichiro, Nagai, Teruyo, Sumiya, Shigeaki, Tanaka, Mitsuhiro, Oda, Osamu

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.68 MB

english, 2001

89

Effect of Excimer Laser Annealing on Optical Properties of GaN Films Deposited by R.F. Magnetron Sputtering

Sung, Man Young, Sung, Woong-Je, Lee, Yong-Il, Park, Chun-Il, Choi, Woo-Boem, Kim, Sangsig

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 335 KB

english, 2001

90

Synthesis of oxygen-free nanosized InN by pulse discharge

Yang, Wei-Dong, Cheah, K.W., Wang, Pei-Nan, Li, Fu-Ming

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 595 KB

english, 2001

91

Removal of 6H-SiC substrate influence when evaluating GaN thin film properties via x-ray

Preble, Edward A., Miraglia, Peter Q., Roskowski, Amy M., Einfeldt, Sven, Davis, Robert F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 265 KB

english, 2001

92

Formation of GaN Self-Organized Nanotips by Nanomasking Effect

Yoshida, Harumasa, Urushido, Tatsuhiro, Miyake, Hideto, Hiramtsu, Kazumasa

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 428 KB

english, 2001

93

Micro-Raman Scattering From Hexagonal GaN, AlN, and AlxGa1-xN Grown on (111) Oriented Silicon: Stress Mapping of Cracks

Ramkumar, C., Prokofyeva, T., Seon, M., Holtz, M., Choi, K., Yun, J., Nikishin, S. A., Temkin, H.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 354 KB

english, 2001

94

Quaternary AlInGaN MQWs for Ultraviolet LEDs

Zhang, J. P., Yang, J. W., Adivarahan, V., Wang, H. M., Fareed, Q., Kuokstis, E., Chitnis, A., Shatalov, M., Simin, G., Khan, M. Asif, Gaska, R., Shur, M. S.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 87 KB

english, 2001

95

Composition Control during Growth of AlGaN Cladding Layers for InGaN-MQW Lasers with Ridge Formed by Selective Re-growth (RiS-type Lasers)

Kimura, Akitaka, Kuramoto, Masaru, Yamaguchi, A. Atsushi

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 457 KB

english, 2001

96

Light emitters fabricated on bulk GaN substrates. Challenges and achievements.

Perlin, Piotr, ski, M. Leszczy, Prystawko, P., Czernecki, R., Nowak, G., Wisniewski, P., Dmowski, L., Teisseyre, H., Litwin-Staszewska, E., Suski, T., Grzegory, I., Porowski, S., Ivanov, V.Yu., Godlew

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 359 KB

english, 2001

97

Raman Studies of GaNP Alloy

Buyanova, I. A., Chen, W. M., Goldys, E. M., Xin, H. P., Tu, C. W.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 238 KB

english, 2001

98

Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

Liliental-Weber, Z., Jasinski, J., Cherns, D., Baines, M., Davis, R.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 2.20 MB

english, 2001

99

Characterization of AlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

Klausing, H., Fedler, F., Rotter, T., Mistele, D., Semchinova, O., Stemmer, J., Aderhold, J., Graul, J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 513 KB

english, 2001

100

Influence of substrate orientation on photoluminescence in InGaN/GaN multiple quantum wells

Chen, P., Chua, S.J., Wang, W.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 168 KB

english, 2001

101

Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

Zhao, J., Zhang, X. D., Feng, Z. C., Deng, J. C., Jin, P., Wang, Y. C., Xu, G.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 164 KB

english, 2001

102

Excitons bound to structural defects in GaN

Reshchikov, M. A., Huang, D., Yun, F., Morkoç, H., Molnar, R. J., Litton, C. W.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 752 KB

english, 2001

103

Optical Absorption of Nitrogen Vacancy in Proton Irradiated AlxGa1-xN thin Films

Zhou, Qiaoying, Manasreh, M. O., Pophristic, M., Ferguson, Ian T., Weaver, B. D.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 78 KB

english, 2001

104

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Zheng, Z. W., Shen, B., Jiang, C. P., Guo, S. L., Liu, J., Zhou, H. M., Zhang, R., Shi, Y., Zheng, Y. D., Zheng, G. Z., Chu, J. H., Someya, T., Arakawa, Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 60 KB

english, 2001

105

Prepare of ZnAl2O4/-Al2O3 complex substrates and growth of GaN films

Bi, Z.X., Zhang, R., Li, W. P., Wang, X.S., Gu, S.L., Shen, B., Shi, Y., Liu, Z.G., Zheng, Y.D.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 266 KB

english, 2001

106

Study of High Nitrogen Compositions GaNAs and GaInNAs Material Quality by X-ray Diffraction and Photoluminescence

Ng, T. K., Yoon, S. F., Wang, S. Z., Loke, W. K., Fan, W. J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 976 KB

english, 2001

107

Interface roughness, Localization and Radiative Efficiency in InGaN/GaN light emitters

Singh, Madhusudan, Singh, Jasprit

Journal:

MRS Proceedings

Année:

2001

Fichier:

PDF, 521 KB

2001

108

Application of Amorphous GaN for Electroluminescence Device

Honda, Tohru, Kawanishi, Hideo

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 198 KB

english, 2001

109

Optical properties of cubic AlGaN

Fanget, Stéphane, Bru-Chevallier, Catherine, Guillot, Gérard, Martinez-Guerrero, Esteban, Jalabert, Denis, Daudin, Bruno, Mariette, Henri, Dang, Le Si, Ferro, Gabriel, Monteil, Yves

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 151 KB

english, 2001

110

Electron transport in AlN under high electric fields

Collazo, Ramón, Schlesser, Raoul, Roskowski, Amy, Davis, Robert F., Sitar, Z.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 233 KB

english, 2001

111

Thermal Desorption of Deuterium from GaN(0001)

Yang, Y., Lee, J., Thoms, B. D., Koleske, D. D., Henry, R. L.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 104 KB

english, 2001

112

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

Mistele, D., Rotter, T., Bougriouaa, Z., Moermanna, I., Röver, K.S., Seyboth, M., Schwegler, V., Stemmer, J., Fedler, F., Klausing, H., Semchinova, O.K., Aderhold, J., Graul, J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 161 KB

english, 2001

113

Characteristics of deep traps in freestanding GaN

Fang, Z-Q., Look, D.C., Visconti, P., Lu, C., Wang, D., Morkoç, H., Park, S.S., Lee, K.Y.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 133 KB

english, 2001

114

Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping

Wang, Lianshan, Chua, Soo Jin, Sun, Wenhong

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 85 KB

english, 2001

115

High Mobility Nitrides

Scott, K., Butcher, A., Wintrebert-Fouquet, Marie, Chen, Patrick P.–T., Tansley, Trevor L., Srikeaw, Surapon

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 55 KB

english, 2001

116

Light Emission from Quantum-Dot-Like Structures in Cubic GaN/InGaN/GaN Double Heterostructures and Quantum Wells

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 487 KB

english, 2001

117

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

Hangleiter, A., Lahmann, S., Netzel, C., Rossow, U., Kent, P. R. C., Zunger, A.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 136 KB

english, 2001

118

Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells

Chichibu, S. F., Sugiyama, M., Onuma, T., Kuroda, T., Tackeuchi, A., Sota, T., Kitamura, T., Nakanishi, H., Ishida, Y., Okumura, H., Keller, S., Mishra, U. K., DenBaars, S. P., Nakamura, S.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 867 KB

english, 2001

119

Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells

Suski, T., Perlin, P., Lepkowski, S.P., Teisseyre, H., Gorczyca, I., Prystawko, P., Leszczynski, M., Grandjean, N., Massies, J., Kitamura, T., Ishida, Y., Chichibu, S.F., Okumura, H.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 101 KB

english, 2001

120

Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells

Monemar, B., Paskov, P.P., Bergman, J.P., Pozina, G., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 259 KB

english, 2001

121

Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN.

Wojdak, M., Baranowski, J.M., Wysmolck, A., Pakula, K., Stepnicwski, R., Potemski, M., Grzegory, I., Porowski, S.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 179 KB

english, 2001

122

Intersubband optical absorption and electron relaxation rates in GaN/AlGaN coupled double quantum wells

Heber, J. D., Gmachl, C., Ng, H. M., Cho, A. Y., Chu, S.-N. G.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 78 KB

english, 2001

123

Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures

Ryu, Mee-Yi, Kuokstis, E., Chen, C. Q., Zhang, J. P., Yang, J. W., Simin, G., Khan, M. Asif

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 260 KB

english, 2001

124

Measurements of the Band Offset of SiO2 on Clean GaN

Hurt, E.H., Cook, Ted E., Tracy, K.M., Davis, R.F., Lucovsky, G., Nemanich, R.J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 119 KB

english, 2001

125

Characterization of high-quality epitaxial AlN films grown by MOVPE

Shibata, Tomohiko, Asai, Keiichiro, Nagai, Teruyo, Sumiya, Shigeaki, Tanaka, Mitsuhiro, Oda, Osamu, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2001

126

Growth of AlN bulk crystals from the vapor phase

Schlesser, Raoul, Dalmau, Rafael, Yakimova, Rositza, Sitar, Zlatko

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 1.77 MB

english, 2001

127

Helical-Type Surface Defects in GaN and InGaN Thin Films Epitaxially Grown on GaN Templates at Reduced Temperatures

Miraglia, Peter, Preble, Edward, Roskowski, Amy, Einfeldt, Sven, Davis, Robert F.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 504 KB

english, 2001

128

Measurement of the Effective Piezoelectric Constant of Nitride Thin Films and Heterostructures Using Scanning Force Microscopy

Rodriguez, B. J., Kim, D-J., Kingon, A. I., Nemanich, R. J.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 241 KB

english, 2001

129

High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition

Chowdhury, U., Wong, M. M., Collins, C. J., Yang, B., Zhu, T. G., Beck, A. L., Campbell, J. C., Dupuis, R. D.

Journal:

MRS Proceedings

Année:

2001

Langue:

english

Fichier:

PDF, 85 KB

english, 2001