Volume 1246

Main
MRS Proceedings
Volume 1246

MRS Proceedings

Volume 1246

1

Deep-Level Defects in Electron Irradiated 6H-SiC

Kozubal, Michal Sebastian, Kaminski, Pawel, Warchol, Stanislaw, Racka-Dzietko, Katarzyna, Grasza, Krzysztof, Tymicki, Emil

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 118 KB

english, 2010

2

Mechanism for Improved Quality B12As2 Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction

Zhang, Yu, Chen, Hui, Dudley, Michael, Zhang, Yi, Edgar, James, Gong, Yinyan, Bakalova, Silvia, Kuball, Martin, Zhang, Lihua, Su, Dong, Kisslinger, Kim, Zhu, Yimei

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 1.79 MB

english, 2010

3

Monolithic a-SiC:H Stack Architectures as Tunable Optical Filters for Spectral Analysis

Vieira, Manuela, Louro, Paula, Vieira, M. A., Costa, João, Fernandes, Miguel, Vygranenko, Yury, Barata, Manuel

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2010

4

Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure

Camarda, Massimo, delugas, pietro, Canino, Andrea, Severino, Andrea, piluso, nicolo, La Magna, Antonino, La Via, Francesco

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 549 KB

english, 2010

5

Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS

Basile, Alberto F, Dhar, Sarit, Rozen, John, Chen, Xudong, Williams, John, Feldman, Leonard C., Mooney, Patricia M.

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 99 KB

english, 2010

6

Bandstructure Manipulation of Epitaxial Graphene on SiC(0001) by Molecular Doping and Hydrogen Intercalation

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 708 KB

english, 2010

7

Demonstration of 3C-SiC MEMS Structures on Polysilicon-on-oxide Substrates

Locke, Christopher, Frewin, Christopher, Abbati, Luca, Saddow, Stephen E.

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 5.92 MB

english, 2010

8

Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

Poggi, Antonella, Moscatelli, Francesco, Solmi, Sandro, Nipoti, Roberta

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 98 KB

english, 2010

9

Afterglow Chemical Processing for Oxide Growth on Silicon Carbide

Hoff, Andrew M, Short, Eugene, Thomas, Helen B, Oborina, Elena I

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 178 KB

english, 2010

10

Pulse Performance and Reliability Analysis of a 1.0 cm2 4H-SiC GTO

O'Brien, Heather, Ogunniyi, Aderinto, Zhang, Qingchun Jon, Agarwal, Anant

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 459 KB

english, 2010

11

Epitaxial Deposition of 3C-SiC on Si Using Unconventional Sputtering of a Hollow Cathode

Huguenin-Love, James L, Soukup, Rodney J, Ianno, Natale J, Lauer, Nole T

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 465 KB

english, 2010

12

Non-destructive Detection and Visualization of Extended Defects in 4H-SiC Epilayers

Feng, Gan, Suda, Jun, Kimoto, Tsunenobu

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 2.47 MB

english, 2010

13

Investigation of SiO2 Cap for Al Implant Activation in 4H-SiC

Zhao, Feng, Islam, Mohammad m, Chandrasekhar, MVS, Sudarshan, Tangali

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 745 KB

english, 2010

14

Micromachining of thin 3C-SiC films for mechanical properties investigation

Michaud, Jean-Francois, Jiao, Sai, Bazin, Anne-Elisabeth, Portail, Marc, Chassagne, Thierry, Zielinski, Marcin, Alquier, Daniel

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 285 KB

english, 2010

15

SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance

Ostling, Mikael, Domeij, Martin, Zaring, Carina, Konstantinov, Andreij, Ghandi, Reza, Buono, Benedetto, Hallen, Anders, Zetterling, Carl-Mikael

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 442 KB

english, 2010

16

Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals

Gupta, Avinash, Wu, Ping, Rengarajan, Varatharajan, Xu, Xueping, Yoganathan, Murugesu, Martin, Cristopher, Emorhokpor, Ejiro, Souzis, Andrew, Zwieback, Ilya, Anderson, Thomas

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 1.57 MB

english, 2010

17

Single Shockley Faults Evolution Under UV Optical Pumping

Canino, Andrea, Camarda, Massimo, La Magna, Antonino, La Via, Francesco

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2010

18

Graphene Growth on SiC and Metal Surfaces by Solid Source Carbon Deposition

Mitchel, W. C., Park, J. H., Smith, H. E., Grazulis, L.

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 510 KB

english, 2010

19

Ohmic Contacts to Wurtzite Silicon Carbide Using Polarization Technology

Praharaj, Choudhury Jayant

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 125 KB

english, 2010

20

Boule Shape Dependence of Shear and von-Mises Stress Distributions in Bulk SiC during Sublimation Growth

Drachev, Roman Victorovich, Hansen, Darren, Loboda, Mark J

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 933 KB

english, 2010

21

Intrinsic Surface Defects on 4H SiC Substrates

Zvanut, Mary Ellen, Thomas, Sarah, Dashdorj, Jamiyanaa

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 81 KB

english, 2010

22

Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics

Camarda, Massimo, La Magna, Antonino, Canino, Andrea, La Via, Francesco

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 777 KB

english, 2010

23

Improved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique

Okamoto, Dai, Yano, Hiroshi, Kotake, Shinya, Hirata, Kenji, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 81 KB

english, 2010

24

Single-crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications

Saddow, Stephen E., Coletti, Camilla, Frewin, Christopher, Schettini, Norelli Castro, Oliveros, Alexandra, Jaroszeski, Mark

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2010

25

Diffusivity of Si in the 3C-SiC Buffer Layer on Si(100) by X-ray Photoelectron Spectroscopy

Chen, Wei-Yu, Lin, Jian-You, Hwang, Jenn-Chang, Huang, Chih-Fang

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 1.98 MB

english, 2010

26

Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

Esteve, Romain, Schoner, Adolf, Reshanov, Sergey A., Zetterling, Carl-Mikael

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 139 KB

english, 2010

27

a-SiC:H Based Devices as Optical Demultiplexers

Louro, Paula, Vieira, Manuela, Costa, João, Vieira, M. A., Fernandes, Miguel, Fantoni, Alessandro, Barata, Manuel

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 217 KB

english, 2010

28

Defect Reduction in SiC Growth Using Physical Vapor Transport

Hansen, Darren, Loboda, Mark J, Drachev, Roman Victorovich, Sanchez, Edward, Zhang, Jie, Carlson, Eric P, Wan, Jianwei, Chung, Gil

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 299 KB

english, 2010

29

Phosphorus Oxide Assisted n-type Dopant Diffusion in 4H-Silicon Carbide

Mendis, Suwan P, Tin, Chin-Che

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 298 KB

english, 2010

30

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Chowdhury, Iftekhar, Chandrasekhar, MVS, Klein, Paul B, Caldwell, Joshua D, Sudarshan, Tangali

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 666 KB

english, 2010

31

Self-aligned Process for SiC Power Devices

Borsa, Tomoko, Van Zeghbroeck, Bart

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 916 KB

english, 2010

32

Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

Dudley, Michael, Byrappa, Shayan, Wang, Huanhuan, Wu, Fangzhen, Zhang, Yu, Raghothamachar, Balaji, Choi, Gloria, Sanchez, Edward, Hansen, Darren, Drachev, Roman, Loboda, Mark

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 22.16 MB

english, 2010