Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
Dudley, Michael, Byrappa, Shayan, Wang, Huanhuan, Wu, Fangzhen, Zhang, Yu, Raghothamachar, Balaji, Choi, Gloria, Sanchez, Edward, Hansen, Darren, Drachev, Roman, Loboda, MarkVolume:
1246
Langue:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1246-B02-02
Date:
January, 2010
Fichier:
PDF, 22.16 MB
english, 2010
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