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Volume 175-176; Issue part-P1

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Journal of Crystal Growth
Volume 175-176; Issue part-P1

Journal of Crystal Growth

Volume 175-176; Issue part-P1

1

Laterally nonuniform Ga segregation at GaAsAlGaAs interfaces during MBE growth

W. Braun, A. Trampert, L. Däwerzitz, K.H. Ploog

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 556 KB

english, 1997

2

Iodine-assisted molecular beam epitaxy

M. Micovic, D. Lubyshev, W.Z. Cai, F. Flack, R.W. Streater, A.J. SpringThorpe, D.L. Miller

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 676 KB

english, 1997

3

InAsGaAs in-plane strained superlattices grown on slightly misoriented (1 1 0) InP substrates by molecular beam epitaxy

Yoshiaki Nakata, Osamu Ueda, Yuji Nishikawa, Shunichi Muto, Naoki Yokoyama

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 567 KB

english, 1997

4

Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic

N.Y. Li, Y.M. Hsin, P.M. Asbeck, C.W. Tu

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 598 KB

english, 1997

5

Solid-source MBE for growth of laser diode materials

Mika Toivonen, Pekka Savolainen, Harry Asonen, Markus Pessa

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 437 KB

english, 1997

6

Passivation of misfit dislocations by atomic hydrogen irradiation in lattice-mismatched heteroepitaxy

Mikihiro Yokozeki, Hiroo Yonezu, Takuto Tsuji, Naoki Ohshima

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 572 KB

english, 1997

7

A Monte Carlo study of gallium desorption kinetics during MBE of (100)-GaAsAlGaAs heterostructures

K. Mahalingam, D.L. Dorsey, K.R. Evans, R. Venkatasubramanian

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 456 KB

english, 1997

8

Evolution of short- and long-range order during Si incorporation on GaAs(0 0 1) observed by RAS and RHEED during MBE

L. Däweritz, K. Stahrenberg, P. Schützendübe, J.-T. Zettler, W. Richter, K.H. Ploog

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 639 KB

english, 1997

9

Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski—Krastanow growth: InAs on GaAs(001)

T.R. Ramachandran, R. Heitz, N.P. Kobayashi, A. Kalburge, W. Yu, P. Chen, A. Madhukar

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 738 KB

english, 1997

10

Surface segregation of Si in δ-doped In0.53Ga0.47As grown by molecular beam epitaxy

B. Vögele, C.R. Stanley, E. Skuras, A.R. Long, E.A. Johnson

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 470 KB

english, 1997

11

Enhancement of substitutional carbon incorporation in hydrogen-mediated pseudomorphic growth of strained alloy layers on Si(0 0 1)

G. Lippert, P. Zaumseil, H.J. Osten, Myoengcheol Kim

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 330 KB

english, 1997

12

Reduction of SiGe heterointerface mixing by atomic hydrogen irradiation during molecular beam epitaxy and its mechanism

Kiyokazu Nakagawa, Yoshinobu Kimura, Masanobu Miyao

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 410 KB

english, 1997

13

High power mid-infrared quantum cascade lasers with a molecular beam epitaxy grown InP cladding operating above room temperature

Jérôme Faist, Federico Capasso, Carlo Sirtori, Deborah L. Sivco, James N. Baillargeon, Albert L. Hutchinson, Sung-Nee G. Chu, Alfred Y. Cho

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 701 KB

english, 1997

14

Sensor controlled linear motion oven (S-LIMO) for group III flux operation

P.P. Chow, K.R. Evans, A.J. SpringThorpe, P. Fisher, J.J. Klaassen, A. Wowchak, J. Van Hove

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 385 KB

english, 1997

15

Molecular beam epitaxial growth of lattice-matched ZnxCdyMg1−x−ySe quaternaries on InP substrates

L. Zeng, A. Cavus, B.X. Yang, M.C. Tamargo, N. Bambha, A. Gray, F. Semendy

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 467 KB

english, 1997

16

Selective area chemical beam epitaxial regrowth of Si-doped GaAs by using silicon tetraiodide for field effect transistor application

Shigekazu Izumi, Yoshitsugu Yamamoto, Tetsuro Kunii, Shinichi Miyakuni, Norio Hayafuji, Kazuhiko Sato, Mutsuyuki Otsubo

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 545 KB

english, 1997

17

Measurement of MBE substrate temperature by photoluminescence

Y. Takahira, H. Okamoto

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 449 KB

english, 1997

18

Solid source MBE growth and regrowth of 1.55 μm wavelength GaInAsPInP ridge lasers

F.G. Johnson, O. King, F. Seiferth, S. Horst, D.R. Stone, R.D. Whaley, M. Dagenais, Y.J. Chen

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 538 KB

english, 1997

19

In situ observation of MEE GaAs growth using scanning electron microscopy

Y. Homma, H. Yamaguchi, Y. Horikoshi

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 420 KB

english, 1997

20

MBE growth of highly reproducible VCSELs

Y.M. Houng, M.R.T. Tan

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 594 KB

english, 1997

21

Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE

D.E. Mars, S.J. Rosner, Y. Kaneko, S. Nakagawa, T. Takeuchi, N. Yamada

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 708 KB

english, 1997

22

Effect of substrate thickness, back surface texture, reflectivity, and thin film interference on optical band-gap thermometry

S.R. Johnson, T. Tiedje

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 681 KB

english, 1997

23

High-temperature surface cleaning of AlGaAs without As flux for MBE regrowth

Kanji Iizuka, Kazuo Matsumaru, Toshimasa Suzuki, Yoshiyuki Takahira, Toshihiro Nishioka, Hiroshi Okamoto

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 384 KB

english, 1997

24

Stratified suspension of highly ordered Si nanoparticles in SiO2 created by Si MBE with oxygen co-implantation

Yukari Ishikawa, N. Shibata, S. Fukatsu

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 723 KB

english, 1997

25

Mass production of InAs Hall elements by MBE

Ichiro Shibasaki

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 955 KB

english, 1997

26

Er doping of III-nitrides during growth by metalorganic molecular beam epitaxy

J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, U. Hömmerich, X. Wu, R.N. Schwartz, R.G. Wilson, J.M. Zavada

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 549 KB

english, 1997

27

Suppression of AlGaAsGaAs superlattice intermixing by p-type doping

K. Muraki, Y. Horikoshi

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 530 KB

english, 1997

28

MBE growth and structural characterization of Si1 − yCySi1 − xGex superlattices

S. Zerlauth, J. Stangl, A.A. Darhuber, V. Holý, G. Bauer, F. Schäffler

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 579 KB

english, 1997

29

Why is a quantum-confined stark shift absent in type-I strained Si1 − xGexSi symmetric quantum wells?

Y. Miyake, J.Y. Kim, Y. Shiraki, S. Fukatsu

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 350 KB

english, 1997

30

Two-dimensional to one-dimensional mode change in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopy

N. Inoue, Y. Kawamura, Y. Homma, J. Osaka, T. Araki, T. Ito

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 835 KB

english, 1997

31

Application of pyrometric interferometry to the in situ monitoring of In0.52Al0.48As, In0.53Ga0.47As, and quaternary alloy growth on InP substrates

R.M. Sieg, R.N. Sacks, S.A. Ringel

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 596 KB

english, 1997

32

A new in situ III–V surface characterization technique: chemical modulation spectroscopy

P.A. Postigo, T. Utzmeier, G. Armelles, F. Briones

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 449 KB

english, 1997

33

Electronic properties of monolayer steps on GaAs (0 0 1) surfaces studied by scanning tunneling microscopy

Kiyoshi Kanisawa, Hiroshi Yamaguchi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 551 KB

english, 1997

34

Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation

Yoshihiko Hanamaki, Tetsuya Takeuchi, Nagaatsu Ogasawara, Yasuhiro Shiraki

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 477 KB

english, 1997

35

Progress and prospect of group-III nitride semiconductors

Isamu Akasaki, Hiroshi Amano

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 717 KB

english, 1997

36

Fabrication and band alignment of pseudomorphic Si1 − yCy, Si1 − x − yGexCy and coupled Si1 − yCySi1 − x − yGexCy quantum well structures on Si substrates

K. Brunner, W. Winter, K. Eberl, N.Y. Jin-Phillipp, F. Phillipp

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 798 KB

english, 1997

37

Low threshold 1.3 μm InAsPGaInAsP lasers grown by solid-source molecular beam epitaxy

C.C. Wamsley, M.W. Koch, G.W. Wicks

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 317 KB

english, 1997

38

Properties of InAs thin films grown on (100)-oriented GaAs substrate with various tilted angles and directions of misorientation

Masaki Yamamoto, Tatsuro Iwabuchi, Takashi Ito, Takashi Yoshida, Toshiro Isoya, Ichiro Shibasaki

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 593 KB

english, 1997

39

Carbon delta doping in chemical beam epitaxy using CBr4

T.B. Joyce, T.J. Bullough, T. Farrell, B.R. Davidson, D.E. Sykes, A. Chew

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 484 KB

english, 1997

40

Heuristic rules for group IV dopant site selection in III–V compounds

R. Venkatasubramanian, Donald L. Dorsey, K. Mahalingam

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 466 KB

english, 1997

41

Molecular beam epitaxial growth of the CdMnTeCdTe superlattices on (100) GaAs substrates

Mitsuaki Yano, Kazuto Koike, Takeshi Furushou, Tokuo Yodo

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 488 KB

english, 1997

42

Initial growth stage of GaN on Si substrate by alternating source supply using dimethyl-hydrazine

Akihiro Hashimoto, Yoshitaka Aiba, Takanori Motizuki, Mitugu Ohkubo, Akio Yamamoto

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 452 KB

english, 1997

43

Gas source molecular beam epitaxy of cubic GaNGaAs (0 0 1) using hydrazine

S.A. Nikishin, G.A. Seryogin, H. Temkin, V.G. Antipov, S.S. Ruvimov, A.V. Merkulov

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 510 KB

english, 1997

44

Elastic and plastic deformation in low mismatched CdxHg1 − xTeCd1 − yZnyTe

T. Colin, T. Skauli, S. Løvold

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 568 KB

english, 1997

45

Electrical characterization of engineered ZnSeGaAs heterojunction diodes

Michele Lazzeri, Vittorio Pellegrini, Fabio Beltram, Marco Lazzarino, Jens J. Paggel, Lucia Sorba, Silvia Rubini, Alberta Bonanni, Alfonso Franciosi

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 463 KB

english, 1997

46

Effect of hydrogen on the growth kinetics of Si(0 0 1) during GSMBE from disilane

Kazuki Mizushima, Dimitri D. Vvedensky, Pavel Šmilauer, Andrew Zangwill, Jing Zhang, Bruce A. Joyce

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 459 KB

english, 1997

47

Luminescence study on Ge islands as stressors on Si1 − xGexSi quantum well

E.S. Kim, N. Usami, H. Sunamura, S. Fukatsu, Y. Shiraki

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 417 KB

english, 1997

48

Growth and characterization of lattice-matched HgSe

L. Parthier, H. Wißmann, S. Luther, G. Machel, M. Schmidbauer, R. Köhler, M. von Ortenberg

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 459 KB

english, 1997

49

Characterization of homoepitaxial SiC layers

J. Schmitt, T. Troffer, K. Christiansen, M. Schadt, S. Christiansen, R. Helbig, G. Pensl, H.P. Strunk

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 348 KB

english, 1997

50

ZnSe homoepitaxial growth on solid-phase recrystallized substrates

E. Tournié, P. Brunet, C. Ongaretto, C. Morhain, J.-P. Faurie, R. Triboulet, J.O. Ndap

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 494 KB

english, 1997

51

Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth

Jun Suda, Ryuji Tokutome, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 459 KB

english, 1997

52

Homogeneous and δ-doped ZnS:Mn grown by MBE

S. Schön, M. Chaichimansour, W. Park, T. Yang, B.K. Wagner, C.J. Summers

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 426 KB

english, 1997

53

Molecular beam epitaxial growth of ZnSe on GaAs substrates: influence of precursors on interface quality

C.C. Kim, Y.P. Chen, S. Sivananthan, S.-C.Y. Tsen, David J. Smith

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 590 KB

english, 1997

54

p-Type doping of beryllium chalcogenides grown by molecular beam epitaxy

H.-J. Lugauer, Th. Litz, F. Fischer, A. Waag, T. Gerhard, U. Zehnder, W. Ossau, G. Landwehr

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 496 KB

english, 1997

55

A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe

L. He, J.R. Yang, S.L. Wang, S.P. Guo, M.F. Yu, X.Q. Chen, W.Z. Fang, Y.M. Qiao, Q.Y. Zhang, R.J. Ding, T.L. Xin

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 460 KB

english, 1997

56

Blue-light emission from ZnSTe-based EL devices

I.K. Sou, J. Mao, Z. Ma, W.S. Chen, Z. Yang, K.S. Wong, G.K.L. Wong

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 490 KB

english, 1997

57

Nitrogen doping of Te-based II–VI compounds

S. Tatarenko, T. Baron, A. Arnoult, J. Cibert, M. Grün, A. Haury, Y.Merle d'Aubigné, A. Wasiela, K. Saminadayar

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 508 KB

english, 1997

58

Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

K.K. Linder, F.C. Zhang, J.-S. Rieh, P. Bhattacharya

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 447 KB

english, 1997

59

Hybrid MBE growth and mobility limiting factors of n-channelSiSiGe modulation-doped systems

A. Yutani, Y. Shiraki

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 369 KB

english, 1997

60

Blue and green electroluminescence from GaNInGaN heterostructures

R. Averbeck, H. Tews, A. Graber, H. Riechert

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 161 KB

english, 1997

61

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

M.A.L. Johnson, W.C. Hughes, W.H. Rowland Jr., J.W. Cook Jr., J.F. Schetzina, M. Leonard, H.S. Kong, J.A. Edmond, J. Zavada

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 621 KB

english, 1997

62

Surface preparation of ZnSe substrates for MBE growth of II–VI light emitters

W.C. Hughes, C. Boney, M.A.L. Johnson, J.W. Cook Jr., J.F. Schetzina

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 538 KB

english, 1997

63

Reduction of extended defects in II–VI blue-green laser diodes

T.B. Ng, C.C. Chu, J. Han, G.C. Hua, R.L. Gunshor, E. Ho, E.L. Warlick, L.A. Kolodziejski, A.V. Nurmikko

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 613 KB

english, 1997

64

Improved MBE-grown GaAs using a novel, high-capacity Ga effusion cell

R.N. Sacks, P. Colombo, George A. Patterson, Kathleen A. Stair

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 497 KB

english, 1997

65

Hydrogen radical surface cleaning of GaAs for MBE regrowth

T.M. Burke, E.H. Linfield, D.A. Ritchie, M. Pepper, J.H. Burroughes

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 532 KB

english, 1997

66

Determination of AlxGa(1 − x)As composition: the MBE perspective

Z.R. Wasilewski, M.M. Dion, D.J. Lockwood, P. Poole, R.W. Streater, A.J. SpringThorpe

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 548 KB

english, 1997

67

Effects of morphology on photoemission oscillation measurements during growth of resonant tunneling devices

J.J. Zinck, D.H. Chow

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 368 KB

english, 1997

68

Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy

C.C. Kim, Y.P. Chen, M. Daraselia, S. Sivananthan, S.-C.Y. Tsen, David J. Smith

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 613 KB

english, 1997

69

Stability of surface reconstructions on hexagonal GaN grown by molecular beam epitaxy

P. Hacke, G. Feuillet, H. Okumura, S. Yoshida

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 572 KB

english, 1997

70

Reducing the defect density in MBE-ZnSeIII–V heterostructures

E.L. Warlick, E. Ho, G.S. Petrich, L.A. Kolodziejski

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 797 KB

english, 1997

71

Growth mechanism of II–VI compound semiconductors by molecular beam epitaxy

Hiroyuki Okuyama, Takayuki Kawasumi, Akira Ishibashi, Masao Ikeda

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 514 KB

english, 1997

72

Real-time monitoring of RHEED using machine vision techniques

R.F. Kromann, R.N. Bicknell-Tassius, A.S. Brown, J.F. Dorsey, K. Lee, G. May

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 530 KB

english, 1997

73

In situ STM characterisation of Ga+ focused ion beam interactions with MBE grown GaAs(100)

S.J. Brown, P.D. Rose, E.H. Linfield, D.A. Ritchie, V. Drouot, G.A.C. Jones

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 557 KB

english, 1997

74

High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

R.D. Rajavel, D.M. Jamba, O.K. Wu, J.E. Jensen, J.A. Wilson, E.A. Patten, K. Kosai, P. Goetz, G.R. Chapman, W.A. Radford

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 593 KB

english, 1997

75

Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

J.D. Benson, A.B. Cornfeld, M. Martinka, J.H. Dinan, B. Johs, P. He, John A. Woollam

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 437 KB

english, 1997

76

Studies of GaN layers grown on sapphire using an RF-source

T.G. Andersson, K. Nozawa, Y. Horikoshi

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 478 KB

english, 1997

77

Virtual control simulator for closed-loop epitaxial growth

J.J. Zhou, Y. Li, D. Pacheco, H.P. Lee, X. Liu

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 668 KB

english, 1997

78

Millimeterwave and digital applications of InP-based MBE grown HEMTs and HBTs

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 378 KB

english, 1997

79

p-Type doping with arsenic in (2 1 1)B HgCdTe grown by MBE

P.S. Wijewarnasuriya, F. Aqariden, C.H. Grein, J.P. Faurie, S. Sivananthan

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 437 KB

english, 1997

80

Real time in-situ thickness control of Fabry—Perot cavities in MBE by 44 and 88 wavelength ellipsometry

C.H. Kuo, M.D. Boonzaayer, M.F. DeHerrera, D.K. Schroder, G.N. Maracas, B. Johs

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 406 KB

english, 1997

81

Simultaneous in situ measurement of substrate temperature and layer thickness using diffuse reflectance spectroscopy (DRS) during molecular beam epitaxy

Y. Li, J.J. Zhou, P. Thompson, D. Pacheco, D.L. Sato, O. Arain, H.P. Lee

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 562 KB

english, 1997

82

Surface reconstruction and morphology evolution in highly strained InAs epilayer growth on GaAs(0 0 1) surface

Q. Xue, T. Ogino, H. Kiyama, Y. Hasegawa, T. Sakurai

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 409 KB

english, 1997

83

II–VI light-emitting devices based on beryllium chalcogenides

F. Fischer, G. Landwehr, Th. Litz, H.J. Lugauer, U. Zehnder, Th. Gerhard, W. Ossau, A. Waag

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 934 KB

english, 1997

84

Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescence

J.M. Van Hove, P.P. Chow, A.M. Wowchak, J.J. Klaassen, M.F. Rosamond, D.R. Croswell

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 426 KB

english, 1997

85

Editorial Board

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 90 KB

english, 1997

86

MBE growth of n-type ZnSe and ZnS using ethylchloride as a dopant

Takashi Yasuda, Bao-Ping Zhang, Yusaburo Segawa

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 326 KB

english, 1997

87

Preface

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 77 KB

english, 1997

88

N incorporation in GaNxP1 − x and InNxP1 − x using a RF N plasma source

W.G. Bi, C.W. Tu

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 412 KB

english, 1997

89

New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy

J. Zhang, A.K. Lees, A.G. Taylor, M.H. Xie, B.A. Joyce, Z. Sobiesierksi, D.I. Westwood

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 321 KB

english, 1997

90

Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 − x − yGexCy alloys on Si

E.T. Croke, A.T. Hunter, C.C. Ahn, T. Laursen, D. Chandrasekhar, A.E. Bair, David J. Smith, J.W. Mayer

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 702 KB

english, 1997

91

Zinc blende GaN grown by radio frequency plasma assisted molecular beam epitaxy

H.D. Cho, N.H. Ko, S.H. Park, T.W. Kang, J.W. Han, K.S. Eom, S.H. Won, K.S. Jung

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 285 KB

english, 1997

92

Cathodoluminescence of GaN films grown under Ga and N rich conditions by radio-frequency-molecular beam epitaxy

Sung Hwan Cho, Uitsu Tanaka, Takahiro Maruyama, Katsuhiro Akimoto, Hajime Okumura, Sadafumi Yoshida

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 524 KB

english, 1997

93

In-situ BEEM study of interfacial dislocations and point defects

H. von Känel, T. Meyer, H. Sirringhaus

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 475 KB

english, 1997

94

MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning

H. Künzel, J. Böttcher, A. Hase, H.-J. Hensel, K. Janiak, G. Urmann, A. Paraskevopoulos

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 485 KB

english, 1997

95

Molecular beam epitaxy of AlGaAsSb system for 1.55 μm Bragg mirrors

J.C. Harmand, A. Kohl, M. Juhel, G. Le Roux

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 478 KB

english, 1997

96

Growth dynamics of InGaAsGaAs by MBE

Françoise Fournier, Robert A. Metzger, Alan Doolittle, April S. Brown, Carrie Carter-Coman, Nan Marie Jokerst, Robert Bicknell-Tassius

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 1.38 MB

english, 1997

97

Molecular beam epitaxy of BeTe on vicinal Si(1 0 0) surfaces

Xiaochuan Zhou, Shan Jiang, Wiley P. Kirk

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 684 KB

english, 1997

98

Visible light emission from MBD-grown SiSiO2 superlattices

S.V. Novikov, J. Sinkkonen, O. Kilpelä, S.V. Gastev

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 407 KB

english, 1997

99

Surface crystal-structure of a GaN film as an in situ mask using MOMBE

Seikoh Yoshida, Masahiro Sasaki

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 453 KB

english, 1997

100

Strain compensation in highly carbon doped GaAsAlAs distributed Bragg reflectors

A. Mazuelas, R. Hey, M. Wassermeier, H.T. Grahn

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 378 KB

english, 1997

101

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

K. Iwata, H. Asahi, K. Asami, S. Gonda

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 494 KB

english, 1997

102

Analysis of in-situ etched and regrown AlInAsGaInAs interfaces

P. Chavarkar, D.S.L. Mui, T. Strand, L.A. Coldren, U.K. Mishra

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 444 KB

english, 1997

103

Use of optical fiber pyrometry in molecular beam epitaxy

K.G. Eyink, J.K. Patterson, S.J. Adams, T.W. Haas, W.V. Lampert

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 494 KB

english, 1997

104

Low temperature (LT) and stoichiometric low temperature (SLT) MBE GaAs and related compounds: improved structural, electrical and optical properties

M. Missous, S. O'Hagan

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 512 KB

english, 1997

105

Formation of an n-GaAsn-GaAs regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma

Takaki Niwa, Naoki Furuhata, Tadashi Maeda

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 538 KB

english, 1997

106

Relation between surface reconstruction transitions and growth kinetics of zincblende (0 0 1) GaN

Oliver Brandt, Hui Yang, Akira Yamada, Klaus H. Ploog

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 435 KB

english, 1997

107

A RHEED and STM study of Sb-rich AlSb and GaSb (0 0 1) surface reconstructions

P.M. Thibado, B.R. Bennett, B.V. Shanabrook, L.J. Whitman

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 581 KB

english, 1997

108

Two-dimensional limitations when increasing the Si-concentration from δ-doping to thin Si-layers in GaAs

J.V. Thordson, T.G. Andersson, G. Swenson, U. Södervall

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 379 KB

english, 1997

109

Molecular beam epitaxial growth of ZnSe(1 1 1) films on GaAs(1 1 1)B substrates and nitrogen doping

N. Matsumura, T. Matsuoka, H. Shimakawa, J. Saraie

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 456 KB

english, 1997

110

Room-temperature continuous-wave operation of ZnSe-based blue-green laser diode grown by molecular beam epitaxy

Moon-Deock Kim, Bong-Jin Kim, Min-Hyon Jeon, Jeong-Keun Ji, Sang-Dong Lee, Eun-Soon Oh, Jin-Suck Kim, Hae-Sung Park, Tae-Il Kim

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 447 KB

english, 1997

111

Growth kinetics of GaN grown by gas-source molecular beam epitaxy

J.R. Jenny, R. Kaspi, K.R. Evans

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 453 KB

english, 1997

112

Optimized growth of lattice-matched ZnCdSe epilayers on InP substrates

A. Cavus, L. Zeng, B.X. Yang, N. Dai, M.C. Tamargo, N. Bambha, F. Semendy

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 572 KB

english, 1997

113

Selective area epitaxy of GaAs using very low energy Ga+ focused ion beam deposition combined with molecular beam epitaxial growth

H.E. Beere, J.H. Thompson, G.A.C. Jones, D.A. Ritchie

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 556 KB

english, 1997

114

Real space imaging of GaAsAlAs (0 0 1) heterointerfaces

J. Behrend, M. Wassermeier, W. Braun, P. Krispin, K.H. Ploog

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 661 KB

english, 1997

115

Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces

M. Hong, J.P. Mannaerts, J.E. Bower, J. Kwo, M. Passlack, W.-Y. Hwang, L.W. Tu

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 502 KB

english, 1997

116

Control of chemical composition and band gap energy in GaxIn1 − x − yAlyAs on InP during molecular beam epitaxy

J.M. Schneider, J.-T. Pietralla, H. Heinecke

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 491 KB

english, 1997

117

Investigation of the structural properties of MBE grown ZnSeGaAs heterostructures

I. Hernández-Calderón, E. López-Luna, J. Luyo, M. Meléndez-Lira, O. de Melo, P. Díaz, L. Hernández, J. Fuentes, R. León, H. Sitter

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 623 KB

english, 1997

118

Sidewall faceting and inter-facet mass transport in selectively grown epitaxial layers on SiO2-masked Si(1 1 0) substrates

Qi Xiang, Shaozhong Li, Dawen Wang, Kunihiro Sakamoto, K.L. Wang, Greg U'Ren, Mark Goorsky

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 343 KB

english, 1997

119

The growth and luminescence of SiGe dots

H. Chen, X.G. Xie, W.Q. Cheng, Q. Huang, J.M. Zhou

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 449 KB

english, 1997

120

Applications of MBE grown PHEMTs

J.V. DiLorenzo, B. Lauterwasser, M.P. Zaitlin

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 665 KB

english, 1997

121

Growth and p-type doping of GaN on c-plane sapphire by nitrogen plasma-assisted molecular beam epitaxy

Myung C. Yoo, M.Y. Park, S.K. Kang, H.D. Cho, J.W. Lee

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 530 KB

english, 1997

122

Monitoring Ga and In desorption and In surface segregation during MBE using atomic absorption

Andrew Jackson, Paul Pinsukanjana, Larry Coldren, Arthur Gossard

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 484 KB

english, 1997