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51

A kinetic study on the hydrogen induced amorphization in ErNi2 laves phase

Chung, U-In, Lee, Jai-Young

Journal:

Acta Metallurgica et Materialia

Année:

1990

Langue:

english

Fichier:

PDF, 567 KB

english, 1990

52

Amorphization of the crystalline CeRu2 hydride and the effects of Gd substitution on the amorphization behaviour

Kim, Yong-Gyoo, Chung, U-In, Lee, Jai-Young

Journal:

Journal of Alloys and Compounds

Année:

1993

Langue:

english

Fichier:

PDF, 639 KB

english, 1993

53

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

Lee, Myoung-Jae, Lee, Dongsoo, Kim, Hojung, Choi, Hyun-Sik, Park, Jong-Bong, Kim, Hee Goo, Cha, Young-Kwan, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam

Année:

2012

Langue:

english

Fichier:

PDF, 2.33 MB

english, 2012

54

Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon

Kim, Jaekyun, Kim, Jun-Youn, Tak, Youngjo, Kim, Joosung, Hong, Hyun-Gi, Yang, Moonseung, Chae, Suhee, Park, Junghoon, Park, Youngsoo, Chung, U-In

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 282 KB

english, 2012

55

Selective growth of carbon nanotube for via interconnects by oxidation and selective reduction of catalyst

Lee, Sunwoo, Moon, Seongho, Yoon, Hong Sik, Wang, Xiaofeng, Kim, Dong Woo, Yeo, In-Seok, Chung, U-In, Moon, Joo-Tae, Chung, Jaegwan

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 523 KB

english, 2008

56

Modeling for multilevel switching in oxide-based bipolar resistive memory

Hur, Ji-Hyun, Kim, Kyung Min, Chang, Man, Lee, Seung Ryul, Lee, Dongsoo, Lee, Chang Bum, Lee, Myoung-Jae, Kim, Young-Bae, Kim, Chang-Jung, Chung, U-In

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 698 KB

english, 2012

57

Band Gap Opening by Two-Dimensional Manifestation of Peierls Instability in Graphene

Lee, Sung-Hoon, Chung, Hyun-Jong, Heo, Jinseong, Yang, Heejun, Shin, Jaikwang, Chung, U-In, Seo, Sunae

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 3.00 MB

english, 2011

58

Effects of Substrate on Piezoelectricity of Electrospun Poly(vinylidene fluoride)-Nanofiber-Based Energy Generators

Lee, Byoung-Sun, Park, Boongik, Yang, Ho-Sung, Han, Jin Woo, Choong, Chweelin, Bae, Jihyun, Lee, Kihwan, Yu, Woong-Ryeol, Jeong, Unyong, Chung, U-In, Park, Jong-Jin, Kim, Ohyun

Journal:

ACS Applied Materials & Interfaces

Année:

2014

Langue:

english

Fichier:

PDF, 1.68 MB

english, 2014

59

A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory

Lee, Myoung-Jae, Ahn, Seung-Eon, Lee, Chang Bum, Kim, Chang-Jung, Jeon, Sanghun, Chung, U-In, Yoo, In-Kyeong, Park, Gyeong-Su, Han, Seungwu, Hwang, In Rok, Park, Bae-Ho

Journal:

ACS Applied Materials & Interfaces

Année:

2011

Langue:

english

Fichier:

PDF, 4.24 MB

english, 2011

60

Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition

Jeon, Insu, Yang, Heejun, Lee, Sung-Hoon, Heo, Jinseong, Seo, David H., Shin, Jaikwang, Chung, U-In, Kim, Zheong Gou, Chung, Hyun-Jong, Seo, Sunae

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 3.56 MB

english, 2011

61

[IEEE IEEE Conference on Nanotechnology - San Francisco, CA, USA (12-14 Aug. 2003)] 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003. - Transistor with electrically induced quantum wire channel

Seung Jae Baik,, Siyoung Choi,, U-In Chung,, Joo Tae Moon,

Année:

2003

Langue:

english

Fichier:

PDF, 296 KB

english, 2003

62

[IEEE 2003 International Symposium on VLSI Technology, Systems and Applications. Technical Papers - Hsinchu, Taiwan (6-8 Oct. 2003)] 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672) - New technologies in isolation and capacitor process for sub 0.1μm DRAM

U-In Chung,, Cha-Young Yoo,, Soo-Jin Hong,

Année:

2003

Langue:

english

Fichier:

PDF, 228 KB

english, 2003

63

Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

Hwang, Injun, Kim, Jongseob, Chong, Soogine, Choi, Hyun-Sik, Hwang, Sun-Kyu, Oh, Jaejoon, Shin, Jai Kwang, Chung, U-In

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 917 KB

english, 2013

64

Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallization

Park, Youn Jung, Kang, Seok Ju, Park, Cheolmin, Kim, Kap Jin, Lee, Han Sup, Lee, Moon Sook, Chung, U-In, Park, In Jun

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 440 KB

english, 2006

65

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - A highly manufacturable low-k ALD-SiBN process for 60nm NAND flash devices and beyond

Jin-Gyun Kim,, Jae-Young Ahn,, Hong-Suk Kim,, Ju-Wan Lim,, Chae-Ho Kim,, Hoka Shu,, Hasebe, K., Sung-Hoi Hur,, Jong-Ho Park,, Hee-Seok Kim,, Yu-Gyun Shin,, U-In Chung,, Joo-Tae Moon,

Année:

2004

Langue:

english

Fichier:

PDF, 261 KB

english, 2004

66

[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric

Hyun, Sangjin, Kim, Hye-Min, Lee, Hye-Lan, Nam, Kab-Jin, Hong, Sug-Hun, Kim, Dong-Chan, Kim, Jihyun, Jang, Soo-Ik, Jeon, In Sang, Kang, Sangbom, Choi, Siyoung, Chung, U-In, Moon, Joo-Tae, Ryu, Byung-I

Année:

2007

Langue:

english

Fichier:

PDF, 499 KB

english, 2007

67

[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - The P-SOG filling Shallow Trench Isolation technology for sub-70 nm device

Jin-Hwa Heo,, Soo-Jin Hong,, Guk-Hyon Yon,, Yu-Gyun Shin,, Fujihara, K., U-In Chung,, Joo-Tae Moon,

Année:

2003

Langue:

english

Fichier:

PDF, 170 KB

english, 2003

68

[IEEE Proceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, USA (7-9 June 2004)] Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) - Characteristics of PAALD-TaN thin films derived from TAIMATA precursor for copper metallization

Jong Won Hong,, Kyung In Choi,, You Kyoung Lee,, Sung Gun Park,, Sang Woo Lee,, Jong Myeong Lee,, Sang Bom Kang,, Gil Heyun Choi,, Sung Tae Kim,, U-In Chung,, Joo Tae Moon,

Année:

2004

Langue:

english

Fichier:

PDF, 223 KB

english, 2004

69

Novel multi-layered 1-D nanostructure exhibiting the theoretical capacity of silicon for a super-enhanced lithium-ion battery

Lee, Byoung-Sun, Yang, Ho-Sung, Jung, Heechul, Jeon, Seung-Yeol, Jung, Changhoon, Kim, Sang-Won, Bae, Jihyun, Choong, Chwee-Lin, Im, Jungkyun, Chung, U-In, Park, Jong-Jin, Yu, Woong-Ryeol

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2014

70

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - Sub-6F2 Charge Trap Dynamic Random Access Memory Using a Novel Operation Scheme

Huo, Zongliang, Baik, Seungjae, Kim, Shieun, Yeo, In-seok, Chung, U-in, Moon, Joo

Année:

2006

Langue:

english

Fichier:

PDF, 2.61 MB

english, 2006

71

[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Improved Cell Performance for sub-50 nm DRAM with Manufacturable Bulk FinFET Structure

Lee, Deok-Hyung, Lee, Sun-Ghil, Yoo, Jong Ryeol, Buh, Gyoung-Ho, Yon, Guk Hyon, Shin, Dong-Woon, Lee, Dong Kyu, Byun, Hyun-Sook, Jung, In Soo, Park, Tai-su, Shin, Yu Gyun, Choi, Siyoung, Chung, U-In,

Année:

2007

Langue:

english

Fichier:

PDF, 2.28 MB

english, 2007

72

[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide

Hong, S.H., Koo, B.Y., Jeon, T.S., Hyun, S.J., Shin, Y.G., U-In Chung,, Moon, J.T.

Année:

2004

Langue:

english

Fichier:

PDF, 240 KB

english, 2004

73

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT

Bae, Jong-Ho, Hwang, Injun, Shin, Jong-Min, Kwon, Hyuck-In, Park, Chan Hyeong, Ha, Jongbong, Lee, JaeWon, Choi, Hyoji, Kim, Jongseob, Park, Jong-Bong, Oh, Jaejoon, Shin, Jaikwang, Chung, U-In, Lee, Jo

Année:

2012

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2012

74

[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Novel 3-D structure for ultra high density flash memory with VRAT (Vertical-Recess-Array-Transistor) and PIPE (Planarized Integration on the same PlanE)

Jiyoung Kim,, Hong, Augustin J., Masaaki Ogawa,, Siguang Ma,, Song, Emil B., You-Sheng Lin,, Jeonghee Han,, U-In Chung,, Wang, Kang L.

Année:

2008

Langue:

english

Fichier:

PDF, 2.14 MB

english, 2008

75

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Highly sensitive and reliable X-ray detector with HgI2 photoconductor and oxide drive TFT

Sun Il Kim,, Sang Wook Kim,, Jae Chul Park,, Young Kim,, Sang Wook Han,, Ho Kyung Kim,, Chang Jung Kim,, U-In Chung,, In-Kyeong Yoo,, Kinam Kim,

Année:

2011

Langue:

english

Fichier:

PDF, 531 KB

english, 2011

76

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

Lee, Chang Bum, Lee, Dong Soo, Benayad, Anass, Lee, Seung Ryul, Chang, Man, Lee, Myoung-Jae, Hur, Jihyun, Kim, Young Bae, Kim, Chang Jung, Chung, U-In

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 391 KB

english, 2011

77

[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb

Cho, S.L., Yi, J.H., Ha, Y.H., Kuh, B.J., Lee, C.M., Park, J.H., Nam, S.D., Horii, H., Cho, B.O., Ryoo, K.C., Park, S.O., Kim, H.S., Chung, U-In., Moon, J.T., Ryu., B.I.

Année:

2005

Langue:

english

Fichier:

PDF, 379 KB

english, 2005

78

[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Band Engineered Charge Trap Layer for highly Reliable MLC Flash Memory

Huo, ZongLiang, Yang, JunKyu, Lim, SeungHyun, Baik, SeungJae, Lee, Juyul, Han, JeongHee, Yeo, In-Seok, Chung, U-In, Moon, Joo Tae, Ryu, Byung-II

Année:

2007

Langue:

english

Fichier:

PDF, 615 KB

english, 2007

79

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Myoung-Jae Lee,, Chang Bum Lee,, Dongsoo Lee,, Seung Ryul Lee,, Jihyun Hur,, Seung-Eon Ahn,, Man Chang,, Young-Bae Kim,, U-In Chung,, Chang-Jung Kim,, Dong-Sik Kim,, Hosun Lee,

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 304 KB

english, 2010

80

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Novel cell structure of PRAM with thin metal layer inserted GeSbTe

Yi, J.H., Ha, Y.H., Park, J.H., Kuh, B.J., Horii, H., Kim, Y.T., Park, S.O., Hwang, Y.N., Lee, S.H., Ahn, S.J., Lee, S.Y., Hong, J.S., Lee, K.H., Lee, N.I., Kang, H.K., U-In Chung,, Moon, J.T.

Année:

2003

Langue:

english

Fichier:

PDF, 258 KB

english, 2003

81

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Fin-channel-array transistor (FCAT) featuring sub-70nm low power and high performance DRAM

Lee, D.-H., Lee, B.-C., Jung, I.-S., Taek Jung Kim,, Yong-Hoon Son,, Sun-Ghil Lee,, Young-Pil Kim,, Siyoung Choi,, U-In Chung,, Joo-Tae Moon,

Année:

2003

Langue:

english

Fichier:

PDF, 295 KB

english, 2003

82

[IEEE 2006 7th Annual Non-Volatile Memory Technology Symposium - San Mateo, CA, USA (2006.11.5-2006.11.8)] 2006 7th Annual Non-Volatile Memory Technology Symposium - Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

Nam, K.-T., Oh, S. C., Lee, J. E., Jeong, J. H., Baek, I. G., Yim, E. K., Zhao, J. S., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T.

Année:

2006

Langue:

english

Fichier:

PDF, 2.92 MB

english, 2006

83

[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application

Jin-Hwa Heo,, Dong-Chan Kim,, Bon-Young Koo,, Ji-Hyun Kim,, Chul-Sung Kim,, Young-Jin Noh,, Sung-Kweon Baek,, Yu-Gyun Shin,, U-In Chung,, Joo-Tae Moon,

Année:

2005

Langue:

english

Fichier:

PDF, 596 KB

english, 2005

84

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

Lee, Sungsik, Nathan, Arokia, Robertson, John, Ghaffarzadeh, Khashayar, Pepper, Michael, Jeon, Sanghun, Kim, Changjung, Song, I-Hun, Chung, U-In, Kinam Kim,

Année:

2011

Langue:

english

Fichier:

PDF, 643 KB

english, 2011

85

[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Nonvolatile MOSFET memory based on high density wn nanocrystal layer fabricated by novel PNL (pulsed nucleation layer) method

Seung-Hyun Lim,, Kyong Hee Joo,, Jin-Ho Park,, Sang-Woo Lee,, Woong Hee Sohn,, Changwon Lee,, Gil Heyun Choi,, In-Seok Yeo,, U-In Chung,, Joo Tae Moon,, Byung-Il Ryu,

Année:

2005

Langue:

english

Fichier:

PDF, 390 KB

english, 2005

86

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - High performance transparent photosensor array utilizing triple oxide semiconductor (HIZO-IZO-HIZO) thin film transistor

Sanghun Jeon,, Ihun Song,, Seung-eon Ahn,, Sungho Park,, Sangwook Kim,, Jaechul Park,, Sunil Kim,, Huaxiang Yin,, Kim, Changjung, U-In Chung,

Année:

2010

Langue:

english

Fichier:

PDF, 664 KB

english, 2010

87

[IEEE Proceedings of the IEEE 2006 International Interconnect Technology Conference - Burlingame, CA (2006.06.5-2006.06.7)] 2006 International Interconnect Technology Conference - Metallization in Memory Device: Present & Future

Sang woo Lee,, Gil Heyun Choi,, Sung Tae Kim,, U-In Chung,, Joo Tae Moon,

Année:

2006

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2006

88

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

Kim, Chang-Jung, Kim, Sangwook, Lee, Je-Hun, Park, Jin-Seong, Kim, Sunil, Park, Jaechul, Lee, Eunha, Lee, Jaechul, Park, Youngsoo, Kim, Joo Han, Shin, Sung Tae, Chung, U-In

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 613 KB

english, 2009

89

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

Kyong-Hee Joo,, Chang-Rok Moon,, Sung-Nam Lee,, Xiofeng Wang,, Jun Kyu Yang,, In-Seok Yeo,, Duckhyung Lee,, Okhyun Nam,, U-In Chung,, Joo Tae Moon,, Byung-Il Ryu,

Année:

2006

Langue:

english

Fichier:

PDF, 3.98 MB

english, 2006

90

[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Laser-induced Epitaxial Growth (LEG) Technology for High Density 3-D Stacked Memory with High Productivity

Son, Yong-Hoon, Lee, Jong-Wook, Kang, Pilkyu, Kang, Min-Gu, Kim, Jin Bum, Lee, Seung Hoon, Kim, Young-Pil, Jung, In Soo, Lee, Byeong Chan, Choi, Si Young, Chung, U-In, Moon, Joo Tea, Ryu, Byung-Il

Année:

2007

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2007

91

Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

Jeon, Sanghun, Song, Ihun, Lee, Sungsik, Ryu, Byungki, Ahn, Seung-Eon, Lee, Eunha, Kim, Young, Nathan, Arokia, Robertson, John, Chung, U-In

Journal:

Advanced Materials

Année:

2014

Langue:

english

Fichier:

PDF, 1.98 MB

english, 2014

92

Short channel device performance of amorphous InGaZnO thin film transistor

Jeon, Sanghun, Benayad, Anass, Ahn, Seung-Eon, Park, Sungho, Song, Ihun, Kim, Changjung, Chung, U-In

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 928 KB

english, 2011

93

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT

Bae, Jong-Ho, Hwang, Sunkyu, Shin, Jongmin, Kwon, Hyuck-In, Park, Chan Hyeong, Choi, Hyoji, Park, Jong-Bong, Kim, Jongseob, Ha, Jongbong, Park, Kiyeol, Oh, Jaejoon, Shin, Jaikwang, Chung, U-In, Seo, K

Année:

2013

Langue:

english

Fichier:

PDF, 824 KB

english, 2013

94

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

Sanghun Jeon,, Sungho Park,, Ihun Song,, Ji-Hyun Hur,, Jaechul Park,, Sunil Kim,, Sangwook Kim,, Huaxiang Yin,, Eunha Lee,, Seungeon Ahn,, Hojung Kim,, Changjung Kim,, U-In Chung,

Année:

2010

Langue:

english

Fichier:

PDF, 1.56 MB

english, 2010

95

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation

Yoo, D.C., Lee, C.M., Bae, B.J., Kim, I.S., Heo, J.E., Im, D.H., Choi, S.H., Park, S.O., Kim, H.S., Chung, U-In., Moon, J.T., Ryu, B.I., Kim, D.J., Noh, T.W.

Année:

2006

Langue:

english

Fichier:

PDF, 728 KB

english, 2006

96

Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics

Choi, Hyun-Sik, Jeon, Sanghun, Kim, Hojung, Shin, Jaikwang, Kim, Changjung, Chung, U-In

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 848 KB

english, 2011

97

The effect of the static magnetic susceptibility on the spin precession in MgO based magnetic tunnel junction

Pi, Ung-Hwan, Lee, Sung-Chul, Kim, Kwang-Seok, Kim, Keewon, Shin, Jay-Kwang, Chung, U-in

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2011

98

Effect of Fe–O distance on magnetocrystalline anisotropy energy at the Fe/MgO(001) interface

Lee, Sung-Chul, Kim, Kwang-Seok, Lee, Sung-Hoon, Pi, Ung-Hwan, Kim, Keewon, Jang, Youngman, Chung, U-In

Journal:

Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2013

99

The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

Choi, Hyun-Sik, Jeon, Sanghun, Kim, Hojung, Shin, Jaikwang, Kim, Changjung, Chung, U-In

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 928 KB

english, 2012

100

Temperature dependence of photocurrent in an amorphous GaInZnO/InZnO thin film transistor

Ahn, Ji-Hoon, Ahn, Seung-Eon, Jeon, Yongwoo, Lee, Seunghyup, Song, Ihun, Kim, Jungwoo, Choi, Hyung, Chung, U-in

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 970 KB

english, 2013