Volume 45; Issue 9

2

New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits

Année:
1998
Langue:
english
Fichier:
PDF, 211 KB
english, 1998
5

Off-state breakdown in power pHEMTs: the impact of the source

Année:
1998
Langue:
english
Fichier:
PDF, 237 KB
english, 1998
10

Interface trap generation by FN injection under dynamic oxide field stress

Année:
1998
Langue:
english
Fichier:
PDF, 166 KB
english, 1998
16

Modeling statistical dopant fluctuations in MOS transistors

Année:
1998
Langue:
english
Fichier:
PDF, 383 KB
english, 1998
31

Improved output ESD protection by dynamic gate floating design

Année:
1998
Langue:
english
Fichier:
PDF, 79 KB
english, 1998
32

A high-performance SOI drive-in gate controlled hybrid transistor (DGCHT)

Année:
1998
Langue:
english
Fichier:
PDF, 86 KB
english, 1998
34

Optically induced sidegating current isolation of GaAs MESFET by multiquantum barrier

Année:
1998
Langue:
english
Fichier:
PDF, 88 KB
english, 1998