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New Ti-SALICIDE process using Sb and Ge preamorphization for sub-0.2 μm CMOS technology
Qiuxia Xu, Chenning HuVolume:
45
Année:
1998
Langue:
english
Pages:
8
DOI:
10.1109/16.711367
Fichier:
PDF, 239 KB
english, 1998