Volume 33; Issue 3

IEEE Transactions on Electron Devices

Volume 33; Issue 3

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 210 KB

english, 1986

2

A new half-micrometer p-channel MOSFET with efficient punchthrough stops

Odanaka, S., Fukumoto, M., Fuse, G., Sasago, M., Yabu, T., Ohzone, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 635 KB

english, 1986

3

SPE-CoSi2submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistor

Ishibashi, K., Furukawa, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 948 KB

english, 1986

4

Determination of contact parameters of interconnecting layers in VLSI circuits

Reeves, G., Harrison, H.B.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 879 KB

english, 1986

5

Channel ion implantation for small-geometry high-performance CMOS-SOS circuits

Lewis, A.G., Brassington, M.P., Partridge, S.L.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 1.15 MB

english, 1986

6

Design and characteristics of a lightly doped drain (LDD) device fabricated with self-aligned titanium disilicide

Fang-Shi J. Lai, Jack Yuan-Chen Sun, Dhong, S.H.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 1.14 MB

english, 1986

7

Optimization of oxygen-implanted silicon substrates for CMOS devices by electrical characterization

Foster, D.J., Butler, A.L., Bolbot, P.H., Alderman, J.C.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 834 KB

english, 1986

8

Fast-response silicon flow sensor with an on-chip fluid temperature sensing element

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 509 KB

english, 1986

9

Nonlinear coupled transmission line analysis for second harmonic generation in traveling-wave GaAs MESFET's

Tiwari, D.C., Hartnagel, H.L.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 703 KB

english, 1986

10

On the photoresponse of GaAs MESFET's: Backgating and deep traps effect

Papaionannou, G.J., Forrest, J.R.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 707 KB

english, 1986

11

Ultrahigh-speed logic gate family with Nb/Al-AlOx/Nb Josephson junctions

Kotani, S., Fujimaki, N., Imamura, T., Hasuo, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 1.28 MB

english, 1986

12

Analytical integration of small-signal transport equations in an MIS structure at flat-band condition

Boucher, J., Rakotondrazafy, C.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 528 KB

english, 1986

13

The effect of distributed series resistance on the dark and illuminated current—Voltage characteristics of solar cells

Araujo, G.L., Cuevas, A., Ruiz, J.M.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1986

14

High-reliability microwave silicon power transistor with stepped electrode structure and TiN diffusion barrier

Kanamori, S., Matsumoto, T.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 982 KB

english, 1986

15

Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

Mong-Song Liang, Jeong Yeol Choi, Ping-Keung Ko, Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 539 KB

english, 1986

16

On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors

Kastalsky, A., Kiehl, R.A.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 1.17 MB

english, 1986

17

The case of AC stress in the hot-carrier effect

Kueing-Long Chen, Saller, S., Shah, R.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 312 KB

english, 1986

18

Variation of lateral doping as a field terminator for high-voltage power devices

Stengl, R., Gosele, U., Fellinger, C., Beyer, M., Walesch, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 420 KB

english, 1986

19

Corrections to "Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's"

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 43 KB

english, 1986

20

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Année:

1986

Langue:

english

Fichier:

PDF, 759 KB

english, 1986