Volume 45; Issue 9

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Semiconductors
Volume 45; Issue 9

Semiconductors

Volume 45; Issue 9

1

Distribution of CdSe nanoparticles synthesized in porous SiOxmatrix

Yu. Yu. Bacherikov, I. Z. Indutnyi, O. B. Okhrimenko, S. V. Optasyuk, P. E. Shepeliavyi, V. V. Ponamarenko

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 296 KB

english, 2011

2

Spectra of optical parameters in bulk and film amorphous alloys of the Se95As5system containing samarium (Sm) impurities

N. Z. Djalilov, G. M. Damirov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 273 KB

english, 2011

3

Optical properties of quantum-confined heterostructures based on GaPxNyAs1 −x−yalloys

A. Yu. Egorov, N. V. Kryzhanovskaya, M. S. Sobolev

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 224 KB

english, 2011

4

The distribution of an electric field inp-njunctions of silicon edgeless detectors

V. K. Eremin, A. S. Naletko, E. M. Verbitskaya, I. V. Eremin, N. N. Egorov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 279 KB

english, 2011

5

Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treatedn-GaAs surface

E. V. Erofeev, V. A. Kagadei

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 405 KB

english, 2011

6

Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy

D. O. Filatov, I. A. Zimovets, M. A. Isakov, V. P. Kuznetsov, A. V. Kornaukhov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 241 KB

english, 2011

7

Protonic metallization of the monoclinic phase in VO2films

A. V. Ilinskiy, O. E. Kvashenkina, E. B. Shadrin

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 212 KB

english, 2011

8

Defect structure of CdxHg1 −xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment

I. I. Izhnin, A. I. Izhnin, E. I. Fitsych, N. A. Smirnova, I. A. Denisov, M. Pociask, K. D. Mynbaev

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 174 KB

english, 2011

9

An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT

Jinrong Pu, Jiuxun Sun, Da Zhang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 208 KB

english, 2011

10

Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals

D. V. Korbutyak, A. P. Lotsko, N. D. Vakhnyak, L. A. Demchuna, R. V. Konakova, V. V. Milenin, R. A. Red’ko

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 185 KB

english, 2011

11

Electron states in single-layer graphene containing short-range defects: The potential separable in the momentum representation

S. A. Ktitorov, Yu. I. Kuzmin, N. E. Firsova

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 243 KB

english, 2011

12

Thermoelectric properties of bismuth telluride nanocomposites with fullerene

V. A. Kulbachinskii, V. G. Kytin, V. D. Blank, S. G. Buga, M. Yu. Popov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 320 KB

english, 2011

13

Conductivity compensation inp-6H-SiC in irradiation with 8-MeV protons

A. A. Lebedev, V. V. Kozlovski, S. V. Belov, E. V. Bogdanova, G. A. Oganesyan

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 178 KB

english, 2011

14

Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

T. R. Lenka, A. K. Panda

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 377 KB

english, 2011

15

XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon onn- andp-type substrates

A. S. Lenshin, V. M. Kashkarov, P. V. Seredin, Yu. M. Spivak, V. A. Moshnikov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 411 KB

english, 2011

16

Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K

Yu. V. Shaldin, S. Matyjasik

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 253 KB

english, 2011

17

Photoluminescence in silicon implanted with silicon ions at amorphizing doses

N. A. Sobolev, A. E. Kalyadin, R. N. Kyutt, V. I. Sakharov, I. T. Serenkov, E. I. Shek, V. V. Afrosimov, D. I. Tetel’baum

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 190 KB

english, 2011

18

A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

F. Y. Soldatenkov, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov, Y. M. Zadiranov, M. G. Rastegaeva, A. A. Usikova

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 439 KB

english, 2011

19

Synthesis of the lead, arsenic, and bismuth chalcogenides with liquid encapsulation

B. A. Tallerchik, S. B. Boiko, S. V. Shtelmah

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 519 KB

english, 2011

20

Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 163 KB

english, 2011

21

Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots

G. I. Tselikov, S. G. Dorofeev, P. N. Tananaev, V. Yu. Timoshenko

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 206 KB

english, 2011

22

Effect of iron impurities on the photoluminescence and photoconductivity of ZnSe crystals in the visible spectral region

Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, P. V. Shapkin

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 176 KB

english, 2011

23

Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties

I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, A. L. Kvanin, S. S. Pushkarev, M. A. Pushkin

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 438 KB

english, 2011

24

Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, K. Požela, J. Požela, V. Jucienė, A. Sužiedėlis, N. Žurauskienė, S. Keršulis, V. Stankevič

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 190 KB

english, 2011

25

Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov, A. D. Bondarev, N. A. Rudova, I. S. Tarasov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 144 KB

english, 2011