Volume 23; Issue 5

Semiconductor Science and Technology

Volume 23; Issue 5

1

Wire-sawing defects on multicrystalline silicon wafers grown by a directional solidification method

Du, Guoping, Chen, Nan, Rossetto, Pietro

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 2.81 MB

english, 2008

2

Simulation of gallium nitride Gunn diodes at various doping levels and temperatures for frequencies up to 300 GHz by Monte Carlo simulation, and incorporating the effects of thermal heating

Macpherson, R F, Dunn, G M, Pilgrim, N J

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 360 KB

english, 2008

3

Radiation defect formation in graded-band-gap epitaxial structures Hg 1− x Cd x Te after boron ion implantation

Voitsekhovskii, A V, Grygor'ev, D V, Smith, Roger

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 806 KB

english, 2008

4

Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

Roro, K T, Kassier, G H, Dangbegnon, J K, Sivaraya, S, Westraadt, J E, Neethling, J H, Leitch, A W R, Botha, J R

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 1.68 MB

english, 2008

5

Correlation of Raman and photoluminescence spectra of electrochemically prepared n-type porous GaAs

Ali, N K, Hashim, M R, Abdul Aziz, A, Abu Hassan, H

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 505 KB

english, 2008

6

Design optimization of structural parameters in double gate MOSFETs for RF applications

Liang, Jiale, Xiao, Han, Huang, Ru, Wang, Pengfei, Wang, Yangyuan

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 284 KB

english, 2008

7

The Bi-IGBT: a low losses power structure by IGBT parallel association

Caramel, C, Maglie, R De, Austin, P, Sanchez, J L, Gal, J Le, Imbernon, E, Laur, J P, Flores, D, Hidalgo, S, Millan, J, Rebollo, J

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2008

8

Dielectric function of cubic InN from the mid-infrared to the visible spectral range

Schley, P, Goldhahn, R, Napierala, C, Gobsch, G, Schörmann, J, As, D J, Lischka, K, Feneberg, M, Thonke, K

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 460 KB

english, 2008

9

Fabrication of nanostructured indium nitride by PA-MOMBE

Kuo, Shou-Yi, Chen, Wei-Chun, Kei, C C, Hsiao, C N

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 866 KB

english, 2008

10

An imaging system based on quantum-well infrared photodetector integrated with light-emitting diode

Dupont, E, Laframboise, S R, Lapointe, J, Dudek, R, Bezinger, A, Fraser, J, Liu, H C

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 418 KB

english, 2008

11

The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots

Thet, C C, Sanorpim, S, Panyakeow, S, Kanjanachuchai, S

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 435 KB

english, 2008

12

Ballistic electron attenuation length in titanylphthalocyanine films grown on GaAs

Özcan, S, Smoliner, J, Andrews, A M, Strasser, G, Dienel, T, Franke, R, Fritz, T

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 222 KB

english, 2008

13

Enhance light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern

Cheng, B S, Chiu, C H, Huang, K J, Lai, C F, Kuo, H C, Lin, C H, Lu, T C, Wang, S C, Yu, C C

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 346 KB

english, 2008

14

Deep impurity levels in vanadium-doped Pb 1− x Mn x Te solid solutions

Dobrovolsky, A A, Artamkin, A I, Dziawa, P, Story, T, Slyn'ko, E I, Slyn'ko, V E, Ryabova, L I, Khokhlov, D R

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 349 KB

english, 2008

15

Fabrication and modelling of screen-printed active electrolytic polymer devices

McGarry, Steven P, Tarr, N Garry

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2008

16

Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

Zhang, Ting, Song, Zhitang, Liu, Bo, Feng, Songlin

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 1.60 MB

english, 2008

17

Etch pits observation and In distribution in mercury indium telluride single crystals

Wang, Linghang, Jie, Wanqi, Yang, Yang, Xu, Gang, Fu, Li

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 943 KB

english, 2008

18

Fabrication and characterization of GaAs/AlGaAs lateral quantum dot developed by ultrasonic agitation

Yang, Q-Z, Jones, G A C, Kelly, M J, Beere, H, Farrer, I

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 2.47 MB

english, 2008

19

Influence of hydrogenation on the electrical and optical properties of CdO thin films

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 423 KB

english, 2008

20

Highly efficient red phosphorescence from dopant polymer light emitting diodes based on mixed-ligand ruthenium(II) complex

Zhu, Yingying, Shen, Fangzhong, Liu, Meirong, Zhang, Ming, Ma, Yuguang

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 281 KB

english, 2008