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Volume 7; Issue 7-8
Main
physica status solidi (c)
Volume 7; Issue 7-8
physica status solidi (c)
Volume 7; Issue 7-8
1
Anomalous capacitance–voltage characteristics of Pt–AlGaN/GaN Schottky diodes exposed to hydrogen
Yoshihiro Irokawa
,
Nobuyuki Matsuki
,
Masatomo Sumiya
,
Yoshiki Sakuma
,
Takashi Sekiguchi
,
Toyohiro Chikyo
,
Yasunobu Sumida
,
Yoshitaka Nakano
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 113 KB
Vos balises:
english, 2010
2
Spontaneous polarization in III-nitride materials: crystallographic revision
Sergey Yu. Karpov
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 84 KB
Vos balises:
english, 2010
3
Current crowding effect on light extraction efficiency of thin-film LEDs
M. V. Bogdanov
,
K. A. Bulashevich
,
O. V. Khokhlev
,
I. Yu. Evstratov
,
M. S. Ramm
,
S. Yu. Karpov
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 216 KB
Vos balises:
english, 2010
4
Effect of ITO spreading layer on performance of blue light-emitting diodes
M. V. Bogdanov
,
K. A. Bulashevich
,
O. V. Khokhlev
,
I. Yu. Evstratov
,
M. S. Ramm
,
S. Yu. Karpov
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 248 KB
Vos balises:
english, 2010
5
Buffer-trap and surface-state effects on gate lag in AlGaN/GaN HEMTs
Kazushige Horio
,
Atsushi Nakajima
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 2010
6
Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements
Hideo Takeuchi
,
Junichi Yanagisawa
,
Jun Hashimoto
,
Masaaki Nakayama
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 81 KB
Vos balises:
english, 2010
7
Study of unintentional arsenic incorporation into free-standing zinc-blende GaN and AlGaN layers grown by molecular beam epitaxy on GaAs substrates
S. V. Novikov
,
N. Zainal
,
C. T. Foxon
,
A. J. Kent
,
F. Luckert
,
P. R. Edwards
,
R. W. Martin
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 138 KB
Vos balises:
english, 2010
8
Deep-UV transparent bulk single-crystalline AlN substrates
Matthias Bickermann
,
Boris M. Epelbaum
,
Octavian Filip
,
Paul Heimann
,
Martin Feneberg
,
Shunro Nagata
,
Albrecht Winnacker
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 222 KB
Vos balises:
english, 2010
9
Sublimation growth of bulk crystals of AlN-rich (AlN)x(SiC)1–x solid solutions
Matthias Bickermann
,
Octavian Filip
,
Boris M. Epelbaum
,
Paul Heimann
,
Albrecht Winnacker
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 139 KB
Vos balises:
english, 2010
10
Formation mechanism of Al-depleted bands in MOVPE-AlGaN layer on GaN template with trenches
Noriyuki Kuwano
,
Tetsuya Ezaki
,
Takuya Kurogi
,
Hideto Miyake
,
Kazumasa Hiramatsu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 659 KB
Vos balises:
english, 2010
11
Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission
Benjamin Damilano
,
Thomas Huault
,
Julien Brault
,
Denis Lefebvre
,
Jean Massies
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 61 KB
Vos balises:
english, 2010
12
Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayers
J. Y. Ni
,
Y. Hao
,
J. S. Xue
,
Z. H. Xu
,
Z. F. Zhang
,
J. C. Zhang
,
L. A. Yang
,
J. F. Zhang
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 320 KB
Vos balises:
english, 2010
13
Optical properties of bulk-like GaN nanorods grown on Si(111) substrates by rf-plasma assisted molecular beam epitaxy
Young S. Park
,
T. W. Kang
,
Hyunsik Im
,
Mark J. Holmes
,
Robert A. Taylor
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 384 KB
Vos balises:
english, 2010
14
Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV
K. M. Yu
,
S. V. Novikov
,
R. Broesler
,
C. R. Staddon
,
M. Hawkridge
,
Z. Liliental-Weber
,
I. Demchenko
,
J. D. Denlinger
,
V. M. Kao
,
F. Luckert
,
R. W. Martin
,
W. Walukiewicz
,
C. T. Foxon
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 138 KB
Vos balises:
english, 2010
15
Influence of the piezoelectric constant on the electronic structure of wurtzite InGaN quantum dots
Kuo-Bin Hong
,
Wei-Yi Tsai
,
Mao-Kuen Kuo
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 130 KB
Vos balises:
english, 2010
16
Mg-related acceptors in GaN
B. Monemar
,
P. P. Paskov
,
G. Pozina
,
C. Hemmingsson
,
J. P. Bergman
,
H. Amano
,
I. Akasaki
,
S. Figge
,
D. Hommel
,
T. Paskova
,
A. Usui
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 116 KB
Vos balises:
english, 2010
17
Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes
Dongpyo Han
,
Jongin Shim
,
Dong-Soo Shin
,
Eunsoo Nam
,
Hyungmoo Park
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 219 KB
Vos balises:
english, 2010
18
Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality
Shin Hashimoto
,
Katsushi Akita
,
Tatsuya Tanabe
,
Hideaki Nakahata
,
Kenichiro Takeda
,
Hiroshi Amano
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 141 KB
Vos balises:
english, 2010
19
RF-MBE growth of InN on 4H-SiC (0001) with off-angles
Misao Orihara
,
Shin Takizawa
,
Takanori Sato
,
Yuuki Ishida
,
Sadafumi Yoshida
,
Yasuto Hijikata
,
Hiroyuki Yaguchi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 532 KB
Vos balises:
english, 2010
20
Plasma assisted LED wafer scribing and fabrication of Ag nanoparticle-embedded LED
Jong-Moo Lee
,
Sung-Bum Bae
,
Doo-Hyub Youn
,
Suntak Park
,
Jung Jin Ju
,
Moon Sik Jang
,
Hyun Min Jung
,
Chang Tae Kim
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 493 KB
Vos balises:
english, 2010
21
The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates
Tim Bohnen
,
Gerbe W. G. van Dreumel
,
Jan L. Weyher
,
Willem J. P. van Enckevort
,
Hina Ashraf
,
Aryan E. F. de Jong
,
Paul R. Hageman
,
Elias Vlieg
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 556 KB
Vos balises:
english, 2010
22
Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates
T. Wunderer
,
J. Wang
,
F. Lipski
,
S. Schwaiger
,
A. Chuvilin
,
U. Kaiser
,
S. Metzner
,
F. Bertram
,
J. Christen
,
S. S. Shirokov
,
A. E. Yunovich
,
F. Scholz
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 839 KB
Vos balises:
english, 2010
23
Photoelectrochemical application of GaN nanostructures on Si for hydrogen generation by water reduction
Katsushi Fujii
,
Takashi Kato
,
Keiichi Sato
,
Inho Im
,
Jiho Chang
,
Takafumi Yao
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 80 KB
Vos balises:
english, 2010
24
Time variation of GaN photoelectrochemical reactions affected by light intensity and applied bias
Kayo Koike
,
Keiichi Sato
,
Katsushi Fujii
,
Takenari Goto
,
Takafumi Yao
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 195 KB
Vos balises:
english, 2010
25
HVPE GaN substrates: growth and characterization
D. Gogova
,
D. Siche
,
A. Kwasniewski
,
M. Schmidbauer
,
R. Fornari
,
C. Hemmingsson
,
R. Yakimova
,
B. Monemar
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 208 KB
Vos balises:
english, 2010
26
Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
Feng Tian
,
Eng Fong Chor
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 158 KB
Vos balises:
english, 2010
27
Carrier relaxation dynamics in InN investigated by femtosecond pump-probe technique
Saulius Nargelas
,
Ramūnas Aleksiejūnas
,
Mikas Vengris
,
Kęstutis Jarašiūnas
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 97 KB
Vos balises:
english, 2010
28
Carrier dynamics in GaN layers overgrown on nanocolumnar structures
Hsiang-Chen Wang
,
Tung-Yi Tang
,
C. C. Yang
,
T. Malinauskas
,
K. Jarašiūnas
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 184 KB
Vos balises:
english, 2010
29
GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth
Shunfeng Li
,
Sönke Fündling
,
Ünsal Sökmen
,
Richard Neumann
,
Stephan Merzsch
,
Peter Hinze
,
Thomas Weimann
,
Uwe Jahn
,
Achim Trampert
,
Henning Riechert
,
Erwin Peiner
,
Hergo-Heinrich Wehmann
,
Andreas Waag
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 113 KB
Vos balises:
english, 2010
30
Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment
Lev Avakyants
,
Pavel Bokov
,
Anatoly Chervyakov
,
Alexander Yunovich
,
Elena Vasileva
,
Boris Yavich
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 187 KB
Vos balises:
english, 2010
31
Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs
Z. Li
,
K. Tang
,
T. P. Chow
,
M. Sugimoto
,
T. Uesugi
,
T. Kachi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 304 KB
Vos balises:
english, 2010
32
Design and performance of LEDs with circular geometry
X.H. Wang
,
P.T. Lai
,
H.W. Choi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 277 KB
Vos balises:
english, 2010
33
Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix
K. S. Zhuravlev
,
I. A. Aleksandrov
,
P.-O. Holtz
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 171 KB
Vos balises:
english, 2010
34
Failure analysis of InGaN/GaN LEDs with emission wavelength between 440 nm and 550 nm
Z. L. Li
,
P. T. Lai
,
H. W. Choi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 128 KB
Vos balises:
english, 2010
35
Correlation between growth pits, optical and structural properties of AlGaN/GaN high-electron-mobility transistors on 4″ silicon substrate
Pum Chian Khai
,
Takaaki Suzue
,
Yusuke Sakai
,
S. Lawrence Selvaraj
,
Takashi Egawa
,
Takashi Jimbo
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 276 KB
Vos balises:
english, 2010
36
Photoluminescence of GaN/AlN quantum dots at high excitation powers
Ivan Aleksandrov
,
Konstantin Zhuravlev
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 303 KB
Vos balises:
english, 2010
37
Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy
Takashi Kawasaki
,
Atsushi Nishikawa
,
Naoki Furukawa
,
Yoshikazu Terai
,
Yasufumi Fujiwara
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 105 KB
Vos balises:
english, 2010
38
Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects
L. Rigutti
,
F. Fortuna
,
M. Tchernycheva
,
A. De Luna Bugallo
,
G. Jacopin
,
F. H. Julien
,
S. T. Chou
,
Y. T. Lin
,
L. W. Tu
,
J.-C. Harmand
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 255 KB
Vos balises:
english, 2010
39
Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs
Markus Maier
,
Thorsten Passow
,
Michael Kunzer
,
Wilfried Pletschen
,
Klaus Köhler
,
Joachim Wagner
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 62 KB
Vos balises:
english, 2010
40
Q-factor measurements on planar nitride cavities
Daniel P. Collins
,
Mark J. Holmes
,
Robert A. Taylor
,
Rachel A. Oliver
,
Menno J. Kappers
,
Colin J. Humphreys
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 287 KB
Vos balises:
english, 2010
41
Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films
Tomoe Yayama
,
Yoshihiro Kangawa
,
Koichi Kakimoto
,
Akinori Koukitu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 168 KB
Vos balises:
english, 2010
42
Spatially-resolved photoluminescence study of high indium content InGaN LED structures
G. Tamulaitis
,
J. Mickevičius
,
D. Dobrovolskas
,
E. Kuokštis
,
M. Shur
,
M. Shatalov
,
J. Yang
,
R. Gaska
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 182 KB
Vos balises:
english, 2010
43
Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells
Carsten Netzel
,
Veit Hoffmann
,
Tim Wernicke
,
Arne Knauer
,
Markus Weyers
,
Michael Kneissl
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 93 KB
Vos balises:
english, 2010
44
Deep etch of GaN by laser micromachining
Giuseppe Y. Mak
,
Edmund Y. Lam
,
H. W. Choi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 221 KB
Vos balises:
english, 2010
45
High-temperature operation of GaN-based OPAMP on silicon substrate
Kazuki Nomoto
,
Kazuya Hasegawa
,
Tohru Nakamura
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 186 KB
Vos balises:
english, 2010
46
Structural and optical characterization of (11-22) semipolar GaN on m -plane sapphire without low temperature buffer layer
Sung-Nam Lee
,
K. K. Kim
,
O. H. Nam
,
J. H. Kim
,
H. Kim
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 185 KB
Vos balises:
english, 2010
47
GaN-based light emitting diodes with periodic nano-structures on the surface fabricated by nanoimprint lithography technique
Yoshiki Naoi
,
Masakazu Matsumoto
,
Tianya Tan
,
Mistuaki Tohno
,
Shiro Sakai
,
Atsuyuki Fukano
,
Satoru Tanaka
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 556 KB
Vos balises:
english, 2010
48
Recess gate AlGaN/GaN HEMTs using overlap gate metal structure
Toshihide Ide
,
Guanxi Piao
,
Yoshiki Yano
,
Mitsuaki Shimizu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 129 KB
Vos balises:
english, 2010
49
Growth kinetics of AlxGa1–xN layers (0 < x < 1) in plasma-assisted molecular beam epitaxy
A. M. Mizerov
,
V. N. Jmerik
,
P. S. Kop'ev
,
S. V. Ivanov
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 222 KB
Vos balises:
english, 2010
50
Study on the effect of the relative position of the phosphor layer in the LED package on the high power LED lifetime
Jung-Ha Hwang
,
Yu-Dong Kim
,
Jae-Wook Kim
,
Su-Jung Jung
,
Ho-Ki Kwon
,
Tchang-Hun Oh
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 589 KB
Vos balises:
english, 2010
51
Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers
M. A. Moram
,
M. J. Kappers
,
C. J. Humphreys
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 406 KB
Vos balises:
english, 2010
52
Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface
Hisashi Murakami
,
Hyun-Chol Cho
,
Yoshinao Kumagai
,
Akinori Koukitu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 358 KB
Vos balises:
english, 2010
53
Improved MOCVD growth of GaN on Si-on-porous-silicon substrates
H. Ishikawa
,
K. Shimanaka
,
M. Azfar bin M. Amir
,
Y. Hara
,
M. Nakanishi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 419 KB
Vos balises:
english, 2010
54
Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al-preseeding and HT AlN buffer layers
Jong Ock Kim
,
Song Ki Hong
,
Kee Young Lim
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 577 KB
Vos balises:
english, 2010
55
An analysis of transient thermal properties for high power GaN-based laser diodes
Jae Min Kim
,
Seungtaek Kim
,
Sung Bok Kang
,
Young Jin Kim
,
Hoon Jeong
,
Kyeongkyun Lee
,
Jongseok Kim
,
Sangdon Lee
,
Dongsik Suh
,
Jeong Hoon Yi
,
Yoonho Choi
,
Seok Gu Jung
,
Minsoo Noh
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 278 KB
Vos balises:
english, 2010
56
Electronic properties of group III-A nitride sheets by molecular simulation
Ernesto Chigo Anota
,
Martín Salazar Villanueva
,
Heriberto Hernández Cocoletzi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 164 KB
Vos balises:
english, 2010
57
GaN based nanorod light emitting diodes by selective area epitaxy
Keyan Zang
,
Soo Jin Chua
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 186 KB
Vos balises:
english, 2010
58
Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride-based LEDs
Y. K. Su
,
J. J. Chen
,
C. L. Lin
,
C. C. Kao
,
C. T. Lin
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 2010
59
Growth and characterization of GaN grown on moth-eye patterned sapphire substrates
Akihiro Ishihara
,
Ryousuke Kawai
,
Thukasa Kitano
,
Atushi Suzuki
,
Toshiyuki Kondo
,
Motoaki Iwaya
,
Hiroshi Amano
,
Satoshi Kamiyama
,
Isamu Akasaki
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 461 KB
Vos balises:
english, 2010
60
GaN surface nanostructure photodetector based on back side incidence
Jing Zhang
,
Yoshiki Naoi
,
Shiro Sakai
,
Atsuyuki Fukano
,
Satoru Tanaka
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 167 KB
Vos balises:
english, 2010
61
Influence of doping on optical properties of catalyst- and mask-free grown gallium nitride nanorods
J. Kalden
,
K. Sebald
,
G. Kunert
,
T. Aschenbrenner
,
C. Kruse
,
D. Hommel
,
J. Gutowski
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 242 KB
Vos balises:
english, 2010
62
Characterization of semipolar (112) GaN on c -plane sapphire sidewall of patterned r -plane sapphire substrate without SiO2 mask
Akihiro Kurisu
,
Kazuma Murakami
,
Yuki Abe
,
Narihito Okada
,
Kazuyuki Tadatomo
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 420 KB
Vos balises:
english, 2010
63
Evaluation of multiple-quantum-well structure on InGaN template using (112) facet growth and mass transport
Daisuke Fujita
,
Takaaki Miyatake
,
Taku Shinagawa
,
Yuki Abe
,
Kazuma Murakami
,
Bocheng Li
,
Hiroyuki Matsumoto
,
Satoru Murayama
,
Narihito Okada
,
Kazuyuki Tadatomo
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 410 KB
Vos balises:
english, 2010
64
Atom probe extended to AlGaN: three-dimensional imaging of a Mg-doped AlGaN/GaN superlattice
Samantha E. Bennett
,
Peter H. Clifton
,
Robert M. Ulfig
,
Menno J. Kappers
,
Jonathan S. Barnard
,
Colin J. Humphreys
,
Rachel A. Oliver
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 96 KB
Vos balises:
english, 2010
65
Growth mechanism of nonpolar m -plane GaN on maskless patterned a -plane sapphire substrate
Yuji Kawashima
,
Kazuma Murakami
,
Yuki Abe
,
Narihito Okada
,
Kazuyuki Tadatomo
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 468 KB
Vos balises:
english, 2010
66
Degradation characteristics of blue GaN-LED chip related to packages
Jeung-Mo Kang
,
Jae-Wook Kim
,
Jeong-Hyeon Choi
,
Du-Hyun Kim
,
Pyung-Sik Oh
,
Sang-Kook Han
,
Ho-Ki Kwon
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 344 KB
Vos balises:
english, 2010
67
Optical characterization of AlGaN/GaN quantum disc structures in single nanowires
L. Rigutti
,
F. Fortuna
,
M. Tchernycheva
,
A. De Luna Bugallo
,
G. Jacopin
,
F. H. Julien
,
F. Furtmayr
,
M. Stutzmann
,
M. Eickhoff
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 185 KB
Vos balises:
english, 2010
68
Influence of slight misorientations of r -plane sapphire substrates on the growth of nonpolar a -plane GaN layers via HVPE
Stephan Schwaiger
,
Frank Lipski
,
Thomas Wunderer
,
Ferdinand Scholz
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 281 KB
Vos balises:
english, 2010
69
Strain effect on optical polarization properties of a -plane GaN on r -plane sapphire
Chao Wu
,
Tongjun Yu
,
Renchun Tao
,
Chuanyu Jia
,
Zhijian Yang
,
Guoyi Zhang
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 89 KB
Vos balises:
english, 2010
70
Energy landscape and carrier wave-functions in InGaN/GaN quantum wells
D. Watson-Parris
,
M. J. Godfrey
,
R. A. Oliver
,
P. Dawson
,
M. J. Galtrey
,
M. J. Kappers
,
C. J. Humphreys
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 342 KB
Vos balises:
english, 2010
71
Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography
Taku Shinagawa
,
Yuki Abe
,
Hiroyuki Matsumoto
,
BoCheng Li
,
Kazuma Murakami
,
Narihito Okada
,
Kazuyuki Tadatomo
,
Masato Kannaka
,
Hideo Fujii
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 929 KB
Vos balises:
english, 2010
72
Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy
Yoshinao Kumagai
,
Hirokazu Adachi
,
Aya Otake
,
Yoshihiro Higashikawa
,
Rie Togashi
,
Hisashi Murakami
,
Akinori Koukitu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 405 KB
Vos balises:
english, 2010
73
InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength
Dandan Zhu
,
Clifford McAleese
,
Maik Häberlen
,
Carmen Salcianu
,
Ted Thrush
,
Menno Kappers
,
Andrew Phillips
,
Penelope Lane
,
Michael Kane
,
David Wallis
,
Trevor Martin
,
Mike Astles
,
Colin Humphreys
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 194 KB
Vos balises:
english, 2010
74
Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy
Tongtong Zhu
,
Menno J. Kappers
,
Michelle A. Moram
,
Rachel A. Oliver
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 225 KB
Vos balises:
english, 2010
75
Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution
Xin Bo Zou
,
Hu Liang
,
Kei May Lau
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 319 KB
Vos balises:
english, 2010
76
An ultraviolet micro-LED array and its application for microlens fabrication
L. Zhu
,
P. T. Lai
,
H. W. Choi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 260 KB
Vos balises:
english, 2010
77
Nitride-based light-emitting solar cell
Y. Kuwahara
,
Y. Fujiyama
,
M. Iwaya
,
S. Kamiyama
,
H. Amano
,
I. Akasaki
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 296 KB
Vos balises:
english, 2010
78
Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
Taek Lim
,
Rolf Aidam
,
Lutz Kirste
,
Patrick Waltereit
,
Stefan Müller
,
Oliver Ambacher
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 2010
79
A novel bio-functionalization of AlGaN/GaN-ISFETs for DNA-sensors
Stefanie Linkohr
,
Stefan Schwarz
,
Stefan Krischok
,
Pierre Lorenz
,
Volker Cimalla
,
Christoph Nebel
,
Oliver Ambacher
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 1.38 MB
Vos balises:
english, 2010
80
Electroluminescence from a forward biased Ni/Au–AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface
B. K. Li
,
M. J. Wang
,
K. J. Chen
,
J. N. Wang
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 131 KB
Vos balises:
english, 2010
81
Study of Si implantation into Mg-doped GaN for MOSFETs
Clemens Ostermaier
,
Sang-Il Ahn
,
Kay Potzger
,
Manfred Helm
,
Jan Kuzmik
,
Dionyz Pogany
,
Gottfried Strasser
,
Jong-Ho Lee
,
Sung-Ho Hahm
,
Jung-Hee Lee
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 128 KB
Vos balises:
english, 2010
82
Reliability of InGaN-based LEDs submitted to reverse-bias stress
Matteo Meneghini
,
Nicola Trivellin
,
Rainer Butendeich
,
Ulrich Zehnder
,
Berthold Hahn
,
Gaudenzio Meneghesso
,
Enrico Zanoni
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 133 KB
Vos balises:
english, 2010
83
Cubic GaN growth on (311)A GaAs substrate by MOVPE
Sakuntam Sanorpim
,
Nuttapong Discharoen
,
Kentaro Onabe
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 321 KB
Vos balises:
english, 2010
84
Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+
Kazutoshi Fukui
,
Syun Sawai
,
Tomoharu Ito
,
Shuichi Emura
,
Tsutomu Araki
,
Akira Suzuki
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 131 KB
Vos balises:
english, 2010
85
Simulations of laser diodes with nonpolar InGaN multi-quantum-wells
Z. Q. Li
,
Z. M. Simon Li
,
Joachim Piprek
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 336 KB
Vos balises:
english, 2010
86
Near-UV LEDs for integrated InO-based ozone sensors
Ch. Y. Wang
,
V. Cimalla
,
M. Kunzer
,
T. Passow
,
W. Pletschen
,
O. Kappeler
,
J. Wagner
,
O. Ambacher
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 146 KB
Vos balises:
english, 2010
87
Modelling of cubic AlxGa1–xN/GaN resonant tunnel diode structures
N. Zainal
,
P. Walker
,
A. J. Kent
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 71 KB
Vos balises:
english, 2010
88
Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2×2 surface
P. Lorenz
,
R. Gutt
,
M. Himmerlich
,
J. A. Schaefer
,
S. Krischok
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 225 KB
Vos balises:
english, 2010
89
MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates
Dares Kaewket
,
Sakuntam Sanorpim
,
Sukkaneste Tungasmita
,
Ryuji Katayama
,
Kentaro Onabe
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 270 KB
Vos balises:
english, 2010
90
Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE
Kai Cheng
,
S. Degroote
,
M. Leys
,
F. Medjdoub
,
J. Derluyn
,
B. Sijmus
,
M. Germain
,
G. Borghs
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 309 KB
Vos balises:
english, 2010
91
In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100 mm sapphire substrates by MOVPE
Kai Cheng
,
S. Degroote
,
M. Leys
,
L.Y. Zhang
,
J. Derluyn
,
M. Germain
,
G. Borghs
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 294 KB
Vos balises:
english, 2010
92
High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach
Yi-Che Lee
,
Hee-Jin Kim
,
Yun Zhang
,
Suk Choi
,
Russell D. Dupuis
,
Jae-Hyun Ryou
,
Shyh-Chiang Shen
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 174 KB
Vos balises:
english, 2010
93
Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
A. Strittmatter
,
M. Teepe
,
Z. Yang
,
C. Chua
,
J. Northrup
,
N. M. Johnson
,
P. Spiberg
,
R. G. W. Brown
,
V. Ivantsov
,
A. Syrkin
,
L. Shapovalov
,
A. Usikov
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 2010
94
Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growth
Masakazu Sugiyama
,
Satoshi Yasukochi
,
Tomonari Shioda
,
Yukihiro Shimogaki
,
Yoshiaki Nakano
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 273 KB
Vos balises:
english, 2010
95
HVPE growth of a -plane GaN on a GaN template (110)Si substrate
Tomoyuki Tanikawa
,
Noriyuki Suzuki
,
Yoshio Honda
,
Masahito Yamaguchi
,
Nobuhiko Sawaki
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 357 KB
Vos balises:
english, 2010
96
Exciton localization in Al-rich AlGaN ternary alloy epitaxial layers
Hideaki Murotani
,
Yoichi Yamada
,
Tsunemasa Taguchi
,
Ryo Kato
,
Toshiya Yokogawa
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 103 KB
Vos balises:
english, 2010
97
Effective mass of InN estimated by Raman scattering
Jung Gon Kim
,
Yasuhito Kamei
,
Noriyuki Hasuike
,
Hiroshi Harima
,
Kenji Kisoda
,
Kouhei Sasamoto
,
Akio Yamamoto
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 392 KB
Vos balises:
english, 2010
98
Hall mobilities in GaNxAs1-x
Javier Olea
,
Kin Man Yu
,
Wladek Walukiewicz
,
Germán Gonzalez-Díaz
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 159 KB
Vos balises:
english, 2010
99
Growth of In-rich and Ga-rich InGaN alloys by MOCVD and fabrication of InGaN-based photoelectrodes
Bin Liu
,
Wenjun Luo
,
Rong Zhang
,
Zhigang Zou
,
Zili Xie
,
Zhaosheng Li
,
Dunjun Chen
,
Xiangqian Xiu
,
Ping Han
,
Youdou Zheng
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 291 KB
Vos balises:
english, 2010
100
AlGaN-based 330 nm resonant-cavity-enhanced p–i–n junction ultraviolet photodetectors using AlN/AlGaN distributed Bragg reflectors
Zili Xie
,
Bin Liu
,
Chao Nie
,
Ruolian Jiang
,
Xiaoli Ji
,
Hong Zhao
,
Ping Han
,
Xiangqian Xiu
,
Rong Zhang
,
Youdou Zheng
,
Haimei Gong
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 278 KB
Vos balises:
english, 2010
101
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN
T. J. Badcock
,
M. Häberlen
,
M. J. Kappers
,
M. A. Moram
,
P. Dawson
,
C. J. Humphreys
,
R. A. Oliver
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 2010
102
Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults
T. J. Badcock
,
S. Hammersley
,
M. J. Kappers
,
C. J. Humphreys
,
P. Dawson
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 179 KB
Vos balises:
english, 2010
103
Characterising the degree of polarisation anisotropy in an a -plane GaN film
T. J. Badcock
,
S. Schulz
,
M. A. Moram
,
M. J. Kappers
,
P. Dawson
,
E. P. O'Reilly
,
C. J. Humphreys
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 207 KB
Vos balises:
english, 2010
104
Fabrication of light emitting diodes transferred onto different substrates by GaN substrate separation technique
Y. Kunoh
,
K. Takeuchi
,
K. Inoshita
,
H. Ohbo
,
S. Tokunaga
,
T. Goto
,
T. Kunisato
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 142 KB
Vos balises:
english, 2010
105
Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphere
Hikari Suzuki
,
Uliana Panyukova
,
Rie Togashi
,
Hisashi Murakami
,
Yoshinao Kumagai
,
Akinori Koukitu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 103 KB
Vos balises:
english, 2010
106
Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC(0001)
Hironori Okumura
,
Tsunenobu Kimoto
,
Jun Suda
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 191 KB
Vos balises:
english, 2010
107
Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation
Kenichi Nakamura
,
Akira Hirako
,
Kazuhiro Ohkawa
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 156 KB
Vos balises:
english, 2010
108
Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode
Ryosuke Kawai
,
Toshiyuki Kondo
,
Atushi Suzuki
,
Fumiharu Teramae
,
Thukasa Kitano
,
Kenta Tamura
,
Hisashi Sakurai
,
Motoaki Iwaya
,
Hiroshi Amano
,
Satoshi Kamiyama
,
Isamu Akasaki
,
Mark Chen
,
Alex Li
,
Kidd
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 339 KB
Vos balises:
english, 2010
109
Growth of free-standing non-polar GaN on (100) γ-LiAlO2 substrates by hydride vapor phase epitaxy
Mitch M.C. Chou
,
D. R. Hang
,
Chenlong Chen
,
Chu-An Li
,
Jin-Wei Lu
,
Chun-Yu Lee
,
Jenq-Dar Tsay
,
Chuck W. C. Hsu
,
Calvin Liu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 227 KB
Vos balises:
english, 2010
110
“Step-graded interlayers” for the improvement of MOVPE InxGa1-xN (x ∼ 0.4) epi-layer quality
Md Rafiqul Islam
,
Y. Ohmura
,
A. Hashimoto
,
A. Yamamoto
,
K. Kinoshita
,
Y. Koji
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 205 KB
Vos balises:
english, 2010
111
AlGaN/GaN HFETs on Fe-doped GaN substrates
Yoshinori Oshimura
,
Kenichiro Takeda
,
Takayuki Sugiyama
,
Motoaki Iwaya
,
Satoshi Kamiyama
,
Hiroshi Amano
,
Isamu Akasaki
,
Akira Bandoh
,
Takashi Udagawa
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 282 KB
Vos balises:
english, 2010
112
High drive current and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistor
Jeng-Wei Yu
,
Han-Min Wu
,
Lung-Han Peng
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 268 KB
Vos balises:
english, 2010
113
Sublimation growth of nonpolar AlN single crystals and defect characterization
Issei Satoh
,
Satoshi Arakawa
,
Keisuke Tanizaki
,
Michimasa Miyanaga
,
Yoshiyuki Yamamoto
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 442 KB
Vos balises:
english, 2010
114
Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer
T. Asai
,
K. Nonaka
,
K. Ban
,
K. Nagata
,
K. Nagamatsu
,
M. Iwaya
,
S. Kamiyama
,
H. Amano
,
I. Akasaki
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 391 KB
Vos balises:
english, 2010
115
Effects of growth temperature on the optical properties of InN nanostructures grown by MOCVD
Yuanping Sun
,
Yong-Hoon Cho
,
Hui Wang
,
Lili Wang
,
Shuming Zhang
,
Hui Yang
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 335 KB
Vos balises:
english, 2010
116
Design and performance of 1.55 μm laser using InGaN
Md. Tanvir Hasan
,
Md. Jahirul Islam
,
Rajib-ul- Hasan
,
Md. Sherajul Islam
,
Shahrina Yeasmin
,
Ashraful G. Bhuiyan
,
Md Rafiqul Islam
,
Akio Yamamoto
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 183 KB
Vos balises:
english, 2010
117
Excitonic binding energies in non-polar GaN quantum wells
Stefan Schulz
,
Eoin P. O'Reilly
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 2010
118
Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate
T. Sugiyama
,
D. Iida
,
M. Iwaya
,
S. Kamiyama
,
H. Amano
,
I. Akasaki
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 93 KB
Vos balises:
english, 2010
119
Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopy
M. Sumiya
,
M. Lozach
,
N. Matsuki
,
S. Ito
,
N. Ohhashi
,
K. Sakoda
,
H. Yoshikawa
,
S. Ueda
,
K. Kobayashi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 413 KB
Vos balises:
english, 2010
120
AlInN/InN metal oxide semiconductor heterostructure field effect transistor
Md. Sherajul Islam
,
Sakib M. Muhtadi
,
Md. Tanvir Hasan
,
Ashraful G. Bhuiyan
,
Md. Rafiqul Islam
,
A. Hashimoto
,
A. Yamamoto
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 181 KB
Vos balises:
english, 2010
121
Optical band gap of h-BN epitaxial film grown on c -plane sapphire substrate
Yasuyuki Kobayashi
,
Chiun-Lung Tsai
,
Tetsuya Akasaka
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 183 KB
Vos balises:
english, 2010
122
In situ SiN passivation of AlInN/GaN heterostructures by MOVPE
H. Behmenburg
,
L. Rahimzadeh Khoshroo
,
C. Mauder
,
N. Ketteniss
,
K. H. Lee
,
M. Eickelkamp
,
M. Brast
,
D. Fahle
,
J. F. Woitok
,
A. Vescan
,
H. Kalisch
,
M. Heuken
,
R. H. Jansen
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 113 KB
Vos balises:
english, 2010
123
Electronic properties of nonpolar cubic GaN MOS structures
D. J. As
,
H. Pöttgen
,
E. Tschumak
,
K. Lischka
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 161 KB
Vos balises:
english, 2010
124
a -plane AlN and AlGaN growth on r -plane sapphire by MOVPE
Reina Miyagawa
,
Hideto Miyake
,
Kazumasa Hiramatsu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 1.43 MB
Vos balises:
english, 2010
125
The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors
Wenping Gu
,
Yue Hao
,
Lin'an Yang
,
Chao Duan
,
Huantao Duan
,
Jincheng Zhang
,
Xiaohua Ma
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 350 KB
Vos balises:
english, 2010
126
Vertical-type InGaN/GaN light emitting diodes with high efficiency reflector ITO/APC alloy on p-GaN
Sung Min Hwang
,
Hyun Kyong Cho
,
Ho Ki Kwon
,
Tchang Hun Oh
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 396 KB
Vos balises:
english, 2010
127
Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells
Takao Oto
,
Ryan G. Banal
,
Mitsuru Funato
,
Yoichi Kawakami
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 298 KB
Vos balises:
english, 2010
128
2DEG properties in InGaN/InN/InGaN-based double channel HEMTs
Md. Tanvir Hasan
,
Md. Rejvi Kaysir
,
Md. Sherajul Islam
,
Ashraful G. Bhuiyan
,
Md. Rafiqul Islam
,
A. Hashimoto
,
A. Yamamoto
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 125 KB
Vos balises:
english, 2010
129
Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy
Ryan G. Banal
,
Mitsuru Funato
,
Yoichi Kawakami
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 374 KB
Vos balises:
english, 2010
130
Improving current spreading of GaN-based LEDs by N -pad current surrounding design
Chun-Fu Tsai
,
Yan-Kuin Su
,
Chun-Liang Lin
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 255 KB
Vos balises:
english, 2010
131
Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate
Theeradetch Detchprohm
,
Mingwei Zhu
,
Shi You
,
Yufeng Li
,
Liang Zhao
,
Edward A. Preble
,
Tanya Paskova
,
Drew Hanser
,
Christian Wetzel
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 179 KB
Vos balises:
english, 2010
132
Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy
O. Landré
,
V. Fellmann
,
P. Jaffrennou
,
C. Bougerol
,
H. Renevier
,
B. Daudin
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 232 KB
Vos balises:
english, 2010
133
Quaternary nitride heterostructure field effect transistors
L. Rahimzadeh Khoshroo
,
N. Ketteniss
,
C. Mauder
,
H. Behmenburg
,
J. F. Woitok
,
I. Booker
,
J. Gruis
,
M. Heuken
,
A. Vescan
,
H. Kalisch
,
R. H. Jansen
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 153 KB
Vos balises:
english, 2010
134
Dislocation density assessment via X-ray GaN rocking curve scans
I. Booker
,
L. Rahimzadeh Khoshroo
,
J. F. Woitok
,
V. Kaganer
,
C. Mauder
,
H. Behmenburg
,
J. Gruis
,
M. Heuken
,
H. Kalisch
,
R. H. Jansen
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 209 KB
Vos balises:
english, 2010
135
Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators
F. Niebelschuetz
,
K. Brueckner
,
K. Tonisch
,
R. Stephan
,
V. Cimalla
,
O. Ambacher
,
M. A. Hein
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 204 KB
Vos balises:
english, 2010
136
P-type doping of semipolar GaN(11$ ar 2 $2) by plasma-assisted molecular-beam epitaxy
A. Das
,
L. Lahourcade
,
J. Pernot
,
S. Valdueza-Felip
,
P. Ruterana
,
A. Laufer
,
M. Eickhoff
,
E. Monroy
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 147 KB
Vos balises:
english, 2010
137
AlN substrates and epitaxy results
Heikki Helava
,
Tat'jana Chemekova
,
Oleg Avdeev
,
Eugeny Mokhov
,
Sergey Nagalyuk
,
Yuri Makarov
,
Mark Ramm
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 296 KB
Vos balises:
english, 2010
138
Structural differences in Mg-doped InN – indication of polytypism
Z. Liliental-Weber
,
M. E. Hawkridge
,
X. Wang
,
A. Yoshikawa
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 559 KB
Vos balises:
english, 2010
139
A precise ray tracing simulation model for GaN based light emitting diodes
Zhiyuan Yang
,
Tongjun Yu
,
Sen Mu
,
Zhizhong Chen
,
Guoyi Zhang
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 98 KB
Vos balises:
english, 2010
140
Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers
Kenichiro Takeda
,
Fumiaki Mori
,
Yuji Ogiso
,
Tomoaki Ichikawa
,
Kentaro Nonaka
,
Motoaki Iwaya
,
Satoshi Kamiyama
,
Hiroshi Amano
,
Isamu Akasaki
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 308 KB
Vos balises:
english, 2010
141
Analysis of trapping effects in AlGaN/GaN HEMTs based on near zero bias output conductance
Hyeongnam Kim
,
Wu Lu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 116 KB
Vos balises:
english, 2010
142
Electrical characterization of n -GaN epilayers using transparent polyaniline Schottky contacts
Yoshitaka Nakano
,
Nobuyuki Matsuki
,
Yoshihiro Irokawa
,
Masatomo Sumiya
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 157 KB
Vos balises:
english, 2010
143
Fabrication of field emitters using GaN particles
Yuichiro Minakuchi
,
Yoichiro Neo
,
Hidenori Mimura
,
Kazuhiko Hara
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 266 KB
Vos balises:
english, 2010
144
Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes
Tim Kolbe
,
Toni Sembdner
,
Arne Knauer
,
Viola Kueller
,
Hernan Rodriguez
,
Sven Einfeldt
,
Patrick Vogt
,
Markus Weyers
,
Michael Kneissl
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 467 KB
Vos balises:
english, 2010
145
Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements
S. Sintonen
,
S. Suihkonen
,
O. Svensk
,
P. T. Törmä
,
M. Ali
,
M. Sopanen
,
H. Lipsanen
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 304 KB
Vos balises:
english, 2010
146
Temperature control of multiple wafers during etching of 2′ sapphire wafers for patterned sapphire substrates (PSS)
Mark Dineen
,
Zhong Ren
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 221 KB
Vos balises:
english, 2010
147
Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatment
Young Jun Choi
,
Hae-Kon Oh
,
Jung-Gyu Kim
,
Hyun-Hee Hwang
,
Hae-Yong Lee
,
Won-Jae Lee
,
Byoung-Chul Shin
,
Jonghee Hwang
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 710 KB
Vos balises:
english, 2010
148
Characterization of etch pit density for gallium nitride layer grown by HVPE and MOCVD
Hae-Kon Oh
,
Jung-Gyu Kim
,
Hyun-Hee Hwang
,
Young Jun Choi
,
Hae-Yong Lee
,
Won-Jae Lee
,
Byoung-Chul Shin
,
Jonghee Hwang
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 334 KB
Vos balises:
english, 2010
149
Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substrates
James Grandusky
,
Yongjie Cui
,
Shawn Gibb
,
Mark Mendrick
,
Leo Schowalter
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 131 KB
Vos balises:
english, 2010
150
Combination of short-range periodicity and interfacial stress effects on valence band scheme in strained MQW (GaN/AlGaN)n
Shuichi Emura
,
Hironobu Tani
,
Masane Kin
,
Yi-Kai Zhou
,
Shigehiko Hasegawa
,
Hajime Asahi
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 105 KB
Vos balises:
english, 2010
151
AlN bulk crystal growth by sublimation method
Tomohisa Kato
,
Ichiro Nagai
,
Tomonori Miura
,
Hiroyuki Kamata
,
Kunihiro Naoe
,
Kazuo Sanada
,
Hajime Okumura
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 164 KB
Vos balises:
english, 2010
152
Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodes
S. Grzanka
,
P. Perlin
,
R. Czernecki
,
L. Marona
,
M. Boćkowski
,
B. Łucznik
,
M. Leszczyński
,
A. Khachapuridze
,
J. Goss
,
U. T. Schwarz
,
T. Suski
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 100 KB
Vos balises:
english, 2010
153
Hydrogen sensing performance dependence on catalytic metal thickness of Pt/AlGaN/GaN Schottky diodes
Junghui Song
,
Wu Lu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 125 KB
Vos balises:
english, 2010
154
Mechanical properties characterization of c -plane (0001) and m -plane (10–10) GaN by nanoindentation examination
Masaki Fujikane
,
Akira Inoue
,
Toshiya Yokogawa
,
Shijo Nagao
,
Roman Nowak
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 399 KB
Vos balises:
english, 2010
155
Lateral patterning of GaN polarity using wet etching process
Yujiro Fukuhara
,
Ryuji Katayama
,
Kentaro Onabe
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 282 KB
Vos balises:
english, 2010
156
Gate-recessed normally-off GaN-on- Si HEMT using a new O2-BCl3 digital etching technique
Shawn D. Burnham
,
Karim Boutros
,
Paul Hashimoto
,
Colleen Butler
,
Danny W.S. Wong
,
Ming Hu
,
Miroslav Micovic
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 144 KB
Vos balises:
english, 2010
157
Optical anisotropy in semipolar (Al,In)GaN laser waveguides
W. Scheibenzuber
,
U. Schwarz
,
R. Veprek
,
B. Witzigmann
,
A. Hangleiter
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 180 KB
Vos balises:
english, 2010
158
GaN growth on LiNbO3 (0001) – a first-principles simulation
Simone Sanna
,
Wolf Gero Schmidt
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 239 KB
Vos balises:
english, 2010
159
AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain
Ki-Sik Im
,
Jong-Bong Ha
,
Ki-Won Kim
,
Jong-Sub Lee
,
Dong-Seok Kim
,
Hyun-Chul Choi
,
Jung-Hee Lee
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 226 KB
Vos balises:
english, 2010
160
Contents: Phys. Status Solidi C 7/7-8
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 626 KB
Vos balises:
english, 2010
161
Preface: Phys. Status Solidi C 7/7-8
General Chair of ICNS-8 Seong-Ju Park
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 295 KB
Vos balises:
english, 2010
162
Light emission polarization properties of strained (112) semipolar InGaN quantum well
Hung-Hsun Huang
,
Yuh-Renn Wu
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 338 KB
Vos balises:
english, 2010
163
Cover Picture: Phys. Status Solidi C 7/7-8
Journal:
physica status solidi (c)
Année:
2010
Fichier:
PDF, 311 KB
Vos balises:
2010
164
Inside Front Cover: Phys. Status Solidi C 7/7-8
Journal:
physica status solidi (c)
Année:
2010
Fichier:
PDF, 1012 KB
Vos balises:
2010
165
Inside Back Cover: Phys. Status Solidi C 7/7-8
Journal:
physica status solidi (c)
Année:
2010
Fichier:
PDF, 320 KB
Vos balises:
2010
166
Back Cover: Phys. Status Solidi C 7/7-8
Journal:
physica status solidi (c)
Année:
2010
Fichier:
PDF, 299 KB
Vos balises:
2010
167
Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate
Yuji Nariyuki
,
Masakazu Matsumoto
,
Takeshi Noda
,
Katsushi Nishino
,
Yoshiki Naoi
,
Shiro Sakai
,
Atsuyuki Fukano
,
Satoru Tanaka
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 211 KB
Vos balises:
english, 2010
168
Structural analysis of nitride-based LEDs grown on micro- and nano-scale patterned sapphire substrates
Y. K. Su
,
J. J. Chen
,
C. L. Lin
,
C. C. Kao
Journal:
physica status solidi (c)
Année:
2010
Langue:
english
Fichier:
PDF, 193 KB
Vos balises:
english, 2010
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