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Volume 240

MRS Proceedings

Volume 240

1

Anisotropic Reactive Ion Etching of Submicron W Features In CF4 or SF6 Plasmas

Fullowan, T. R., Ren, F., Pearton, S. J., Mahoney, G. E., Kostelak, R. L.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 2.72 MB

english, 1991

2

Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

Kanbe, H., Chavez-Pirson, A., Kumagai, M., Saito, H., Fukui, T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 388 KB

english, 1991

3

Optical Characterization of Heavily Carbon Doped GaAs

Wang, Lei, Haegel, N. M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 293 KB

english, 1991

4

The Superlattice Diffusion Probe: A Tool for Modeling Diffusion in III-V Semiconductors

Allen, E. L., Pass, C. J., Deal, M. D., Plummer, J. D., Chia, V. F. K.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 2.18 MB

english, 1991

5

Characterisation of Thin Lattice Mismatched Heteroepitaxial Layers by XRD

Halliwell, Mary A. G.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 307 KB

english, 1991

6

Advances in Photoreflectance Analysis of HBT Wafers

Denenberg, David, Blew, Austin

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 194 KB

english, 1991

7

Wet and Dry Etching of InGaP

Lothian, J. R., Kuo, J. M., Pearton, S. J., Ren, F.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 296 KB

english, 1991

8

Theory of Schottky-Contact Formation on GaAs (110)

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 421 KB

english, 1991

9

DC Characteristics of Nanometer-Gatelength GaAS Mesfets

Nummila, K., Tong, M., Ketterson, A. A., Adesida, I.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 281 KB

english, 1991

10

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

Zhao, J. H., Lis, R., Coblentz, D., Illan, J., McAfee, S., Burke, T., Weiner, M., Buchwald, W., Jones, K.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 307 KB

english, 1991

11

Simulation Design and Device Characteristics of AlAs/GaAs/AlAs Resonant Tunneling Structures with a GalnAs Emitter Spacer Layer

Choi, Y. W., Kim, H. M., Wie, C. R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 318 KB

english, 1991

12

Damage Related Defect Levels in Oxygen Implanted GaAs and InP

He, L., Anderson, W. A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 315 KB

english, 1991

13

Oxygen in Gallium Arsenide

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 250 KB

english, 1991

14

High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System

Kapre, R. M., Chen, Li, Kaviani, K., Hu, Kezhong, Chen, Ping, Madhukar, A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 887 KB

english, 1991

15

As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs

Zavada, J. M., Wilson, R. G., Novak, S. W.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 302 KB

english, 1991

16

Quantitative Depth Profiling Resonance Ionization Mass Spectrometry of III-V Heterostructure Semiconductors

Emerson, A. B., Downey, S. W., Kopf, R. F.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 303 KB

english, 1991

17

TEM Studies of Alloy Clustering in InAlAs Strained Layers

Peiro, F., Cornet, A., Morante, J. R., Clark, S. A., Williams, R. H.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 3.17 MB

english, 1991

18

Growth and Characterization of Ternary and Quaternary Compounds of Iny (AlxGa1−x)1-yAs on (100) InP

Tseng, W. F., Comas, J., Steiner, B., Metze, G., Cornfeld, A., Klein, P. B., Gaskill, D. K., Xia, W., Lau, S. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.41 MB

english, 1991

19

Threading Dislocations in InxGabxAs/GaAs System

Tamura, M., Hashimoto, A., Nakatsugawa, Y.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 4.68 MB

english, 1991

20

Non-Contact, Wafer-Scale Deep Level Transient Spectroscopy (DLTS) Based on Surface Photovoltage (SPV)

Lagowski, Jacek, Morawski, Andrzej, Edelman, Piotr

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 326 KB

english, 1991

21

Dynamical X-Ray Diffraction Studies of Interfacial Strain in Superlattices Grown by Molecular Beam Epitaxy

Vandenberg, J. M., Chu, S. N. G., Hamm, R. A., Panish, M. B., Ritter, D., Mancrander, A. T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 297 KB

english, 1991

22

Non-Destructive Measurements of III-V Semiconductor Device Structure by a Hard X-ray Microprobe

Uchida, F., Shigeta, J., SUZUKI, Y.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.91 MB

english, 1991

23

Novel Growth Techniques for the Fabrication of Photonic Integrated Circuits

Coudenys, G., Vermeire, G., Zhu, Y., Moerman, I., Buydens, L., Van Daele, P., Demeester, P.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 2.89 MB

english, 1991

24

Relaxation of Mismatched InxAl1−xAs/InP Heterostructures

Bennett, Brian R., del Alamo, Jesús A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 346 KB

english, 1991

25

Investigation of Multilayer Systems for Optical Bragg Reflectors by X-ray Double Crystal Topography and - DIF-Fractometry

Jenichen, B., Köhler, R., Hey, R., Höricke, M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.70 MB

english, 1991

26

Atomie Layer Epitaxy ia a Rotating Disk Reactor

Liu, H., Zawadzki, P. A., Norris, P. E.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 256 KB

english, 1991

27

Quantum Well Shape Modification in Quaternary Quantum Wells

Köteles, Emil S., Masum Choudhury, A. N. M., Levy, A., Elman, B., Melman, P., Koza, M. A., Bhat, R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 395 KB

english, 1991

28

Impact of a Vicinal Growth Surface on AlAs / GaAs Superlattice Layer Thickness Measurements with Double Crystal X-ray Diffraction

Leiberich, A., Levkoff, J., Robertson, A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 282 KB

english, 1991

29

Semi-Insulating InP Grown by MOCVD

Feng, M. S., Wu, C. C., Lin, K. C., Chan, S. H., Chen, C. Y.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.75 MB

english, 1991

30

Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

Peiro, F., Cornet, A., Herms, A., Morante, J. R., Georgakilas, A., Halkias, G.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 2.60 MB

english, 1991

31

Rare-Earth Doped In1−xGaxP Prepared by Metalorganic Vapor Phase Epitaxy

Neuhalfen, A. J., Wessels, B. W.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 393 KB

english, 1991

32

Growth and Stability of Strained-Layer Multiple Quantum Wells

Niki, Shigeru, Maktta, Yunosuke, Yamada, Akimasa, Shimada, Junichi

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 210 KB

english, 1991

33

Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs (100) Substrate Using Unprecracked Arsine and Trimethylgallium

Park, Seong-Ju, Sim, Jae-Ki, Ro, Jeong-Rae, Yoo, Byueng-Su, Park, Kyung-Ho, Lee, El-Hang

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.24 MB

english, 1991

34

A Grazing Incidence X-Ray Reflectometer for Rapid Nondestructive Characterization of Thin Films and Interfaces

Loxley, N., Monteiro, A., Cooke, M. L., Bowen, D. K., Tanner, B. K.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 377 KB

english, 1991

35

Carrier Mobility and Active Layer Sheet Measurements of Compound Semiconductors

Denenberg, David, Blew, Austin

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 987 KB

english, 1991

36

High Resolution Compound Semiconductor Mapping for Process Control

Denenberg, David, Blew, Austin

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 406 KB

english, 1991

37

Ordered Structure in GalnP/AIGalnP Quantum Wells and p-Doped Multiquantum Well AIGalnp Laser Diodes

Tanaka, Toshiaki, Yanagisawa, Hironori, Yano, Shin-Ichiro, Minagawa, Shigekazu

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 2.02 MB

english, 1991

38

Studies of Recombination Transfer in Alloys and Thin Quantum Wells of Ga0.47In0.53As/InP Using the Optically Detected Impact Ionisation Technique

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 381 KB

english, 1991

39

Growth of GaAs, InxGa1−xAs, and AlxGa1−xAs on GaAs (111)B Substrates by Molecular Beam Epitaxy

Yang, K., Schowalter, L. J., Laurich, B. K., Smith, D. L.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.89 MB

english, 1991

40

Growth of GaAs and GaP from TMG: A Comparison

Eyers, Markus, Sato, Michio

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 336 KB

english, 1991

41

A Comparison Between Dry Etching with an Electron Cyclotron Resonance Source and Reactive Ion Etching for GaAs and InP

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.31 MB

english, 1991

42

Dry Etch Self-Aligned AlInAs/InGaAs Heterojunction Bipolar Transistors

Fullowan, T. R., Pearton, S. J., Kopf, R. F., Ren, F., Chen, Y. K., Smith, P. R., Chin, M. A., Lothian, J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.95 MB

english, 1991

43

Electron Cyclotron Resonance Plasma Processing of GaAs-AlGaAs Hemt Structures

Pearton, S. J., Ren, F., Lothian, J. R., Fullowan, T. R., Kopf, R. F., Chakrabarti, U. K., HUI, S. P., Emerson, A. B., Pei, S. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 402 KB

english, 1991

44

Low Temperature Growth of GaAs and AlGaAs by Mombe

Abernathy, C. R., Bohling, D. A., Jones, A. C.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 465 KB

english, 1991

45

Dry Etch Damage in GaAs P-N Junctions

Pearton, S. J., Ren, F., Abernathy, C. R., Fullowan, T. R., Lothian, J. R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 327 KB

english, 1991

46

Low Damage Magnetron Reactive Ion Etching of GaAs

Mclane, G., Meyyappan, M., Cole, M. W., Lee, H. S., Lareau, R., Namaroff, M., Sasserath, J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 320 KB

english, 1991

47

Selective Gate Recessing of GaAs/AIGaAs/lnGaAs Pseudomorphic HEMT Structures Using BCl3 Plasmas

Kazior, T. E., Patel, B. I.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1991

48

The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung Devices

Beam, E. A., Seabaugh, A. C.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 3.03 MB

english, 1991

49

Selective Reactive ION Etching Effects on GaAs/AlGaAs Modfets

Ballegeer, D. G., Agarwala, S., Tong, M., Ketterson, A. A., Adesida, I., Griffin, J., Spencer, M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 350 KB

english, 1991

50

An Etch-Back Planarization Process Using A Sacrificial Polymide Layer

Lothian, J. R., Fullowan, T. R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.33 MB

english, 1991

51

Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE

De Wolf, I., Van Hove, M., Pereira, R.-G., Van Rossum, M., Maes, H. E., Münder, H.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 448 KB

english, 1991

52

Damage Introduced by Chdamage Introduced by CH4/H2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs

Pereira, R., Van Hove, M., De Raedt, W., Van Hoof, C., Borghs, G., Van Rossum, M., Braspenning, R. H., Eijkemans, T. J., Van Es, C. M., Wolter, J. H.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 840 KB

english, 1991

53

Investigation of Gaas Deep Etching by Using Reactive Ion Etching Technique

Din, Kuen-Sane, Chi, Gou-Chung

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 2.43 MB

english, 1991

54

CHF3 and NH3 Additives for Reactive ion Etching of GaAs Using CCl2F2 and SICI4

Din, Kuen-Sane, Chi, Gou-Chung

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 252 KB

english, 1991

55

Reactive Ion Etching of TaSix in a CF4-O2 Discharge

Chen, C. P., Din, K. S., Huang, F. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 784 KB

english, 1991

56

Novel ECR Reactor for Plasma Processing of III-V Semiconductor Compounds

Lane, Baxton, Smatlak, Donna

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 315 KB

english, 1991

57

Fermi Level Effects on Dislocation Formation in InAs1−xSbx Grown by MOCVD

Biefeld, R. M., Drummond, T. J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 359 KB

english, 1991

58

Formation of Ohmic Contacts to InP by Means of Rapid Thermal Low Pressure (Metalorganic) Chemical Vapor Deposition (RT-LPMOCVD) Technique

Katz, A., Feingold, A., Pearton, S. J., Nakahara, S., Lane, E., Geva, M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 5.01 MB

english, 1991

59

Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs

Ren, F., Emerson, A. B., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 294 KB

english, 1991

60

Improvement of Ohmie Contacts on GaAs with In-Situ Cleaning

Ren, F., Pearton, S. J., Fullowan, T. R., Hobson, W. S., Chu, S. N. G., Emerson, A. B.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 2.05 MB

english, 1991

61

Rapid Growth Kinetics, Mechanical Properties and Thermal Stability of Siox Thin Films Grown by Rapid Thermal Low Pressure Chemical Vapor Deposition

Feingold, A., Katz, A., Pearton, S. J., Chakrabartl, U. K., Jones, K. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 381 KB

english, 1991

62

A Microstructual Analysis of Au/Pd/Ti Ohmic Contacts for GaAs-Based Heterojunction Bipolar Transistors (HJBTs)

Henry, Bernard M., Staton-Bevan, A. E., Sharma, V. K. M., Crouch, M. A., Gill, S. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.88 MB

english, 1991

63

Sintered Ohmic Contacts to GaAs

Cibuzar, Gregory T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 381 KB

english, 1991

64

Quasi-Schottky Diodes on (n)In.53Ga.47as with Barrier Heights of 0.6 eV

Marso, M., Kordoš, P., Meyer, R., Lüth, H.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 290 KB

english, 1991

65

Carbon Doping of GaAs by OMVPE Using CC14: A Comparison of Gallium and Arsenic Precursors

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 296 KB

english, 1991

66

Temperature Dependent Schottky Contacts to InP and GaAs

Shi, Z. Q., Wallace, R. L., Anderson, W. A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 354 KB

english, 1991

67

Ohmic Contacts to Heavily Carbon-Doped p+-GaAs Using Ti/Si/Pd

Lee, H. S., Han, W. Y., Lu, Y., Cole, M. W., Lareau, R. T., Casas, L., Thompson, R. J., Deanni, A., Jones, K. A., Yang, L. W.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 994 KB

english, 1991

68

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

LEE, H. S., Lareau, R. T., Schauer, S. N., Moerkirk, R. P., Jones, K. A., Elagoz, S., Va Vra, W., Clarke, R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.54 MB

english, 1991

69

Stable Schottky Contacts to n-Type GaAs Produced by Ge Rich Co-Ge Metalization

Koltin, E., Eizenberg, M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.17 MB

english, 1991

70

Barrier Height Reduction at the Pd-Ge/n-GaAs Interface

Meissner, P. L., Bravman, J. C., Kendelewicz, T., Spindt, C. J., Herrera-Gómez, A., Spicer, W. E., Arko, A. J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 376 KB

english, 1991

71

A Novel GaAs Bipolar Transistor Structure with GaInP-Hole Injection Blocking Barrier

Pletschen, W., Bachem, K. H., Lauterbach, T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 292 KB

english, 1991

72

Electrical and Optical Characterization of Pseudomorphic AlGaAs/InGaAs High Electron Mobility Transistors

Winters, W. E., Yue, A. S., Streit, D.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 386 KB

english, 1991

73

Fabrication of Hemt-on-Si by Movpe for Lsi Applications

Ohori, Tatsuya, Kikkawa, T., Suzuki, M., Takasaki, K., Romeno, J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.16 MB

english, 1991

74

Direct Evidence for Interstitial Carbon in Heavily Carbon-Doped GaAs

HÖFler, G. E., Klatt, J., Baillargeon, J. N., Averback, R. S., Cheng, K. Y., Hsieh, K C.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 362 KB

english, 1991

75

Radiation Testing of AlInAs/lnGaAs and GaAs/AlGaAs HBTs

Witmer, S. B., Mittleman, S., Lehy, D., Ren, F., Fullowan, T. R., Kopf, R. F., Abernathy, C. R., Pearton, S. J., Humphrey, D. A., Montgomery, R. K., Smith, P. R., Kreskovsky, J. P., Grubin, H. L.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 348 KB

english, 1991

76

Reverse Leakage Current in GaAs/AlGaAs Self Electro-Optic Effect Devices

Freund, J. M., Swaminathan, V., Focht, M. W., Guth, G. D., Przybylek, G. J., Smith, L. E., Leibenguth, R. E., Chirovsky, L. M. F., D'Asaro, L. A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 245 KB

english, 1991

77

Ambipolar Lifetimes in GaAs/AlGaAs Self Electro-Optic Effect Devices

Swaminathan, V., Freund, J. M., Focht, M. W., Guth, G. D., Przybylek, G. J., Smith, L. E., Leibenguth, R. E., D'Asaro, L. A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 292 KB

english, 1991

78

Integrated Distributed Feedback Laser and Optical Amplifier

Dutta, N. K., Lopata, J., Logan, R., Tanbun-Ek, T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 245 KB

english, 1991

79

High Electron Mobility Transistors with Optically Processed Refractory Silicide Metallizations: Thermal and Microwave Analysis

Tang, P. F., Fan, M. S., Illiadis, A. A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.90 MB

english, 1991

80

The Effect of Rapid Thermal Annealing on the Electrical and Material Characteristics of Planar Doped and Uniformly Doped GaAs/AiGaAs/InGaAs Pseudomorphic HEMT Structures

Kazior, T. E., Brierley, S. K.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 378 KB

english, 1991

81

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

Hobson, W. S., Zussman, A., De Jong, J., Levine, B. F.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 297 KB

english, 1991

82

Growth of GaAs and AlGaAs by MOMBE Using Phenylarsine

Abernathy, C. R., Wisk, P., Pearton, S. J., Ren, F., Bohling, D. A., Muhr, G. T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.28 MB

english, 1991

83

Reduced Mobility and PPC in In.20Ga.80As/Al.23Ga.77 as Hemt Structure

Schacham, S. E., Mena, R. A., Haugland, E. J., Alterovitz, S. A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 331 KB

english, 1991

84

Oxidation and Diffusion at Poly-SiGe/GaAs Interfaces

Kavanagh, K. L., Chang, J. C. P., Sadana, D., Cardone, F.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.18 MB

english, 1991

85

The Impact of the Extrinsic Device on HFET Performance

Greenberg, David R., Del Alamo, Jesús A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 314 KB

english, 1991

86

Interface Recombination and Threshold Current in Grinsch-QW ALGaAs/GaAs Laser Diodes

Xie, K., Kim, H. M., Wie, C. R., Varriano, J. A., Wicks, G. W.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 383 KB

english, 1991

87

Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors

Mäder, K. A., Baldereschi, A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 478 KB

english, 1991

88

AlAs-GaAs Beterojunction Engineering by Means of Group IV Interface Layers

Bratina, G., Sorba, L., Biasiol, G., Vanzetti, L., Franciosi, A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1991

89

High Performance Quantum Well Asymmetric Fabry-Perot Reflection Modulators: Effect of Layer Thickness Variations

Law, K-K., Whitehead, M., Merz, J. L., Coldren, L. A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 425 KB

english, 1991

90

Growth, Behavior, and Applications of Strained InGaAs/GaAs Multiple Quantum well Based Asymmetric Fabry-Perot Reflection Modulators

Hu, Kezhong, Chen, Li, Madhukar, A., Chen, P., Xie, Q., Rajkumar, K. C., Kaviani, K.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.90 MB

english, 1991

91

Observation of the Influence of Strain Induced deep Level Defects on the Electroabsorption Characteristics of InGaAs/GaAs (100) Multiple Quantum well Structures and Implications for Light Modulators

Chen, Li, Chen, Wei, Rajkumar, K. C., Hu, Kezhong, Madhukar, A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 299 KB

english, 1991

92

Comparison of Dislane and Tetraethyltin as Gaseous Dopants for Growth of n-GaAs and O-AlGaAs by MOMBE

Wisk, P., Abernathy, C. R., Pearton, S. J., Ren, F., Fullowan, T., Lothian, J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 231 KB

english, 1991

93

Energy and Depth Distributions of Interface States and bulk Traps and their Electronic Effects in GalnAs/GaAs Heterojuntions

Huang, Z. C., Wie, C. R., Johnstone, D., Stutz, C. E., Evans, K. R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 395 KB

english, 1991

94

Theoretical Studies of Defects, Impurities, and Complexes in Semiconductors

Estreicher, Stefan K.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 920 KB

english, 1991

95

Bonding of Hydrogen Implanted at 80K INTO III-V Semiconductors

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 346 KB

english, 1991

96

Hydrogen Incorporation and Carrier Reduction in Hydrogenated n-GaAs:Si and p-GaAs:Zn Crystals

Zavada, J. M., Wilson, R. G., Jenkinson, H. A., Novak, S. W., Pearton, S. J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 265 KB

english, 1991

97

Hydrogen Passivation of Si and Be Dopants in InAlAs

Roos, G., Johnson, N. M., Pao, Y. C., Harris, J. S., Herring, C.y

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 268 KB

english, 1991

98

Raman Microprobe Spectroscopy and Photon Scanning Tunneling Spectroscopy: Applications to Optical Waveguides

Jackson, Howard E.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 295 KB

english, 1991

99

Neutral Impurity Disordering of III-V Quantum well Structures for Optoelectronic Integration

Marsh, J. H., Andrew, S. R., Ayling, S. G., Beauvais, J., Bradshaw, S. A., Bryce, A. C., Hansen, S. I., De La Rue, R. M., Glew, R. W.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 758 KB

english, 1991

100

Trimethylamine Alane for Low-Pressure Movpe Growth of AlGaAs-Based Materials and Device Structures

Schneider, R. P., Bryan, R. P., Jones, E. D., Biefeld, R. M., Olbright, G. R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 409 KB

english, 1991

101

Raman Characterization of AlGaAs Superlattice Channel Waveguide Structure formed by CIB and FIB Implantation

Choo, A. G., Gupta, V., Jackson, H. E., Boyd, J. T., Steckl, A. J., Chen, P., Weiss, B. L., Burnham, R. D.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 249 KB

english, 1991

102

Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices

Choo, A. G., Jackson, H. E., Chen, P., Steckl, A. J., Gupta, V., Boyd, J. T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 237 KB

english, 1991

103

Correlation of Dislocation Loop Formation and Time Dependent Diffusion of Implanted P-type Dopants in Gallium Arsenide

Robinson, H. G., Deal, M. D., Stevenson, D. A., Jones, K. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.51 MB

english, 1991

104

Dependence of Interdiffusion in AlGaAs on Stoichiometry between Ga-RICH and As-Rich Solidus Limits

Olmsted, B. L., Houde-Walter, S. N., Viturro, R. E.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 380 KB

english, 1991

105

Zinc Diffusion Rates and Profiles in AlGaAs Alloys

Smith, F. T. J.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 247 KB

english, 1991

106

Diffusion of P- and N-Type Dopants in GaAs/AIGaAs DH Structure Grown by MOCVD

Ogasawara, N., Karakida, S., Miyashita, M., Hayafuji, N., Tsugami, M., Mihashi, Y., Murotani, T.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 307 KB

english, 1991

107

Mechanism of Cr Diffusion in GaAs

Yu, S., Tan, T. Y., Gösele, U.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 744 KB

english, 1991

108

Hydrogen Passivation of GaAs:C Epitaxial Layers Grown from Metalorganic Sources

Stavola, Michael, Kozuch, D. M., Abernathy, C. R., Hobson, W. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 669 KB

english, 1991

109

Shubnikov-De Haas Studies of Negative Persistent Photoconductivity in AlGaSb/InAs/AlGaSb Quantum Wells

Lo, Ikai, Mitchel, W. C., Manasreh, M. O., Stutz, C. E., Evans, K. R.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 318 KB

english, 1991

110

Spin-Splitting and Effective Mass of the 2-Dimensional Electron Gas in an Al0.6Ga0.4Sb/InAs Single Quantum Well

Manasreh, M. O., Gumbs, Godfrey, Zhang, C., Lo, I., Bozada, C. A., Dettmer, R. W., Stutz, C. E., Evans, K. R., Mitchel, W. C.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 352 KB

english, 1991

111

Effect of Surface Ambient on Manganese Diffusion in Gallium Arsenide

Wu, C. H., Hsieh, K. C.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.30 MB

english, 1991

112

GaAs Surface Passivation by InGaP Thin Film

Hyuga, Fumiaki, Aoki, Tatsuo, Sugitani, Suehiro, Asai, Kazuyoshi, Imamura, Yoshihiro

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 250 KB

english, 1991

113

Ion Implantation Related Defects in GaAs

Jones, K. S., Bollong, M., Haynes, T. E., Deal, M. D., Allen, E. L., Robinson, H. G.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 3.65 MB

english, 1991

114

Ion Implantation Doping of InGaP, InGaAs, and InAlAs

Pearton, S. J., Kuo, J. M., Hobson, W. S., Hailemarian, E., Ren, F., Katz, A., Perley, A. P.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 389 KB

english, 1991

115

Implantation-Induced Voids for Thermally Stable Electrical Isolation in GaAs

Ko, K. Y., Chen, Samuel, Tong, S., Braunstein, G.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 867 KB

english, 1991

116

The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs

Moll, A. J., Walukiewicz, W., Yu, K. M., Hansen, W. L., Haller, E. E.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 421 KB

english, 1991

117

Indium-Carbon Co-Implantation in GaAs

Madok, J. H., Haegel, N. M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 326 KB

english, 1991

118

Damage Accumulation in Gallium Arsenide During Silicon Implantation Near Room Temperature

Haynes, T. E., Holland, O. W., Desnica, U. V.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 559 KB

english, 1991

119

High-Energy Elevated Temperature Si and Room Temperature B Implants in InP

Nadella, R. K., Vellanki, J., Rao, M. V.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 326 KB

english, 1991

120

Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

Kringhoj, P., Svensson, B. G.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 305 KB

english, 1991

121

Amphoteric Behaviour of Ge in InP: A RBS/Channeling and Differential Hall/Resistivity Study

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 326 KB

english, 1991

122

Production of Midgap Electron Traps by Ga Out-Diffusion in Rapid-Thermal-Processed GaAs with Sio2 Encapsulants

Tokuda, Yutaka, Suzuki, Hitoshi, Katayama, Masayuki, Usami, Akira

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 314 KB

english, 1991

123

Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

Marrakchi, G., Kalboussi, A., Guillot, G., Ben Salem, M., Maaref, H., Molva, E.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 327 KB

english, 1991

124

The Effect of Si Planar Doping on DX Centers in Al.20Ga.74As

Solomon, G. S., Roos, G., Muñoz-Merino, E., Harris, J. S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 807 KB

english, 1991

125

Shallow Ion Implantation in Gallium Arsenide Mesfet Technology

de Souza, J. P., Sadana, D. K.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 839 KB

english, 1991

126

Interface Recombination in III/V Heterostructures Investigated Through the Power Dependence of Excitonic Photoluminescence

MüLlenborn, M., Haegel, N. M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 381 KB

english, 1991

127

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

Koteies, Emil S.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 432 KB

english, 1991

128

The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties.

Phatak, Prashant, Imaizumi, Mitsuru, Weber, E. R., Newman, N., Liliental-Weber, Z.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 3.21 MB

english, 1991

129

High-Performance Structure of Light-Emitting Diode for GaAs on Si Tetsuroh Minemura

Asano, Junko, Yazawa, Yoshiaki

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 312 KB

english, 1991

130

Determination of Ga Self-Diffusion Coefficient in GaAs

Tan, T. Y., Yu, S., Gösele, U.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 435 KB

english, 1991

131

Constant Depth DLTS Measurements on Compound Semiconductors

Denenberg, David, Blew, Austin

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 310 KB

english, 1991

132

Multichamber Rie Processing for Ingaasp Ridge Waveguide Laser Arrays

Rothman, Mark A., Thompson, John A., Armiento, Craig A.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 1.67 MB

english, 1991

133

Dose effects in Si FIB-mixing of short period AlGaAs/GaAs superlattices

Stecki, A. J., Chen, P., Choo, A., Jackson, H., Boyd, J. T., Pronko, P. P., Ezis, A., Kolbas, R. M.

Journal:

MRS Proceedings

Année:

1991

Langue:

english

Fichier:

PDF, 272 KB

english, 1991