Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications
Kwon, Hyungshin, Hwang, HyunsangVolume:
611
Langue:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-611-c2.4.1
Date:
January, 2000
Fichier:
PDF, 104 KB
english, 2000