IEEE Transactions on Electron Devices

1

Performance analysis of the segment npn anode LIGBT

Green, D.W., Sweet, M., Vershinin, K.V., Hardikar, S., Narayanan, E.M.S.

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 678 KB

english, 2005

2

Reset-while-address (RWA) driving scheme for high-speed address in AC plasma display panel with high Xe content

Byung-Gwon Cho, Heung-Sik Tae

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 987 KB

english, 2005

3

Microwave noise performance and modeling of SiGe-based HFETs

Aguilar, M.E., Crozat, P., Hackbarth, T., Herzog, H.-J., Aniel, F.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 450 KB

english, 2005

4

A new high breakdown voltage lateral Schottky collector bipolar transistor on SOI: design and analysis

Kumar, M.J., Roy, S.D.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 398 KB

english, 2005

5

Numerical modeling and electromagnetic resonant modes in complex grating structures and optoelectronic device applications

Crouse, D.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 766 KB

english, 2005

6

Analysis of the Kirk effect in silicon-based bipolar transistors with a nonuniform collector profile

Hueting, R.J.E., van der Toorn, R.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 416 KB

english, 2005

7

Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs

Bing-Yue Tsui, Lin, C.-P.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2005

8

Implantation and activation of high concentrations of boron in Germanium

Yong Seok Suh, Carroll, M.S., Levy, R.A., Bisognin, G., De Salvador, D., Sahiner, M.A., King, C.A.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 479 KB

english, 2005

9

Failure of moments-based transport models in nanoscale devices near equilibrium

Jungemann, C., Grasser, T., Neinhuus, B., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 314 KB

english, 2005

10

Prediction of data retention time distribution of DRAM by physics-based statistical Simulation

Seonghoon Jin, Jeong-Hyong Yi, Jae Hoon Choi, Dae Gwan Kang, Park, Y.J., Hong Shick Min

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 666 KB

english, 2005

11

Experimental evidences of carrier distribution and behavior in frequency in a BMFET Modulator

Sciuto, A., Libertino, S., Coffa, S., Coppola, G., Iodice, M.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 1.26 MB

english, 2005

12

Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits

Akturk, A., Goldsman, N., Metze, G.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 928 KB

english, 2005

13

Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs

Low, T., Ming-Fu Li, Samudra, G., Yee-Chia Yeo, Chunxiang Zhu, Chin, A., Dim-Lee Kwong

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 880 KB

english, 2005

14

Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices

Paasschens, J.C.J., Scholten, A.J., van Langevelde, R.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 489 KB

english, 2005

15

Three-dimensional substrate impedance engineering based on p-/p+ Si substrate for mixed-signal system-on-chip (SoC)

Kyuchul Chong, Xi Zhang, King-Ning Tu, Daquan Huang, Mau-Chung Chang, Ya-Hong Xie

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2005

16

Further insight into the physics and modeling of floating-body capacitorless DRAMs

Villaret, A., Ranica, R., Malinge, P., Masson, P., Martinet, B., Mazoyer, P., Candelier, P., Skotnicki, T.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 829 KB

english, 2005

17

Integration of organic FETs with organic photodiodes for a large area, flexible, and lightweight sheet image scanners

Someya, T., Kato, Y., Shingo Iba, Noguchi, Y., Sekitani, T., Kawaguchi, H., Sakurai, T.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2005

18

Investigation on the current nonuniformity in current-mode TFT active-matrix display pixel circuitry

Xiaojun Guo, Silva, S.R.P.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 363 KB

english, 2005

19

Does TFT mobility impact pixel size in AMOLED backplanes?

Kumar, A., Nathan, A., Jabbour, G.E.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 540 KB

english, 2005

20

Optimization of threshold voltage window under tunneling program/erase in nanocrystal memories

Compagnoni, C.M., Ielmini, D., Spinelli, A.S., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 445 KB

english, 2005

21