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Volume 42; Issue 4

IEEE Transactions on Electron Devices

Volume 42; Issue 4

1

Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes

Veerasamy, V.S., Amaratunga, G.A.J., Park, J.S., MacKenzie, H.S., Milne, W.I.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 973 KB

english, 1995

2

A charge control and current-voltage model for inverted MODFET's

Anwar, A.F.M., Liu, K.-W., Khondker, A.N.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 442 KB

english, 1995

3

The interdependence between the collapse phenomenon and the avalanche breakdown in AlGaAs/GaAs power heterojunction bipolar transistors

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 656 KB

english, 1995

4

Inverse modeling and its application in the design of high electron mobility transistors

Hyungkeun Ahn, El Nokali, M.A.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 673 KB

english, 1995

5

Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFET's

Gonzalez, T., Pardo, D.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 678 KB

english, 1995

6

Modeling of current-voltage characteristics for strained and lattice matched HEMT's on InP substrate using a variational charge control model

Guan, L., Christou, A., Halkias, G., Barbe, D.F.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 600 KB

english, 1995

7

Monolithic HEMT-HBT integration by selective MBE

Streit, D.C., Umemoto, D.K., Kobayashi, K.W., Oki, A.K.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 659 KB

english, 1995

8

Application of the TLM method to transient thermal simulation of microwave power transistors

Webb, P.W., Russell, I.A.D.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 827 KB

english, 1995

9

Effect of trap location and trap-assisted Auger recombination on silicon solar cell performance

Pang, S.K., Smith, A.W., Rohatgi, A.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 684 KB

english, 1995

10

Optical devices from AlGaAs-GaAs HBTs heavily doped with amphoteric Si

Arai, Y., Sakuta, M., Takano, H., Ushikubo, T., Furukawa, R., Kobayashi, M.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 680 KB

english, 1995

11

High responsivity GaInAs PIN photodiode by using erbium gettering

Wen-Jeng Ho, Meng-Chyi Wu, Yuan-Kuang Tu, Hung-Hui Shih

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 744 KB

english, 1995

12

Theoretical analysis of transient behavior of optoelectronic integrated devices

Zhu, Y., Noda, S., Sasaki, A.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 590 KB

english, 1995

13

Photo response analysis in CCD image sensors with a VOD structure

Kawai, S., Morimoto, M., Mutoh, N., Teranishi, N.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 936 KB

english, 1995

14

A study of deep-submicron MOSFET scaling based on experiment and simulation

Hang Hu, Jacobs, J.B., Su, L.T., Antoniadis, D.A.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 911 KB

english, 1995

15

Modeling of the intrinsic retention characteristics of FLOTOX EEPROM cells under elevated temperature conditions

Papadas, C., Pananakakis, G., Ghibaudo, G., Riva, C., Pio, F., Ghezzi, P.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 615 KB

english, 1995

16

Electromigration-induced integration limits on the future ULSI's and the beneficial effects of lower operation temperatures

You-Wen Yi, Ihara, K., Saitoh, M., Mikoshiba, N.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 576 KB

english, 1995

17

Pulse current trimming of polysilicon resistors

Feldbaumer, D.W., Babcock, J.A., Mercier, V.M., Chun, C.K.Y.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 909 KB

english, 1995

18

Titanium silicide/silicon nonohmic contact resistance for NFET's, PFET's, diffused resistors, and NPN's in a BiCMOS technology

Hook, T.B., Mann, R.W., Nowak, E.J.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 694 KB

english, 1995

19

An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's

Momose, H.S., Morimoto, T., Ozawa, Y., Yamabe, K., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 771 KB

english, 1995

20

Performance and potential of ultrathin accumulation-mode SIMOX MOSFET's

Faynot, O., Cristoloveanu, S., Auberton-Herve, A.J., Raynaud, C.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 696 KB

english, 1995

21

Low-frequency noise in polysilicon emitter bipolar transistors

Markus, H.A.W., Kleinpenning, T.G.M.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 757 KB

english, 1995

22

A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits

Dongwook Suh, Fossum, J.G.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 979 KB

english, 1995

23

Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's

Tse-En Chang, Chimoon Huang, Tahui Wang

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 549 KB

english, 1995

24

Response of photovoltaic cells to pulsed laser illumination

Lowe, R.A., Landis, G.A., Jenkins, P.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 837 KB

english, 1995

25

Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors

Berthold, G., Zanoni, E., Canali, C., Pavesi, M., Pecchini, M., Manfredi, M., Bahl, S.R., del Alamo, J.A.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 849 KB

english, 1995

26

High field related thin oxide wearout and breakdown

Dumin, D.J., Mopuri, S.K., Vanchinathan, S., Scott, R.S., Subramoniam, R., Lewis, T.G.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 1.51 MB

english, 1995

27

A high power light triggered triac with a novel light sensitive structure

Shan-Qi Zhao, Zheng-Yuan Wang, Ding-San Gao

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 525 KB

english, 1995

28

Techniques for maintaining design efficiency when operating klystron amplifiers at levels below the maximum output power

Tallerico, P., Rees, D., Young, A., Laycock, D., Symons, R.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 479 KB

english, 1995

29

An analytical delay expression for source-coupled FET logic (SCFL) inverters

Sano, E., Murata, K.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 165 KB

english, 1995

30

A simple analytical model of the tunnel MIS emitter Auger transistor

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 528 KB

english, 1995