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Volume 33; Issue 11

IEEE Electron Device Letters

Volume 33; Issue 11

1

A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology

Webster, Eric A. G., Grant, Lindsay A., Henderson, Robert K.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 743 KB

english, 2012

2

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs

Silvestri, Marco, Uren, Michael J., Kuball, Martin

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 535 KB

english, 2012

3

New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High- $k$/IL Gate Dielectric

Lee, Sang Kyung, Jo, Minseok, Sohn, Chang-Woo, Kang, Chang Yong, Lee, Jack C., Jeong, Yoon-Ha, Lee, Byoung Hun

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 729 KB

english, 2012

4

Thin-Wafer Silicon IGBT With Advanced Laser Annealing and Sintering Process

Rahimo, M., Corvasce, C., Vobecky, J., Otani, Y., Huet, K.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 625 KB

english, 2012

5

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., Bezares, F. J., Jernigan, G. G., Tadjer, M. J., Imhoff, E. A., Koehler, A. D., Gaskill, D. K., Eddy,

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 278 KB

english, 2012

6

Graphene Interconnect Lifetime: A Reliability Analysis

Chen, Xiangyu, Seo, David H., Seo, Sunae, Chung, Hyunjong, Wong, H.-S. Philip

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 371 KB

english, 2012

7

Design of Organic Vertical-Cavity Surface-Emitting Laser for Electrical Pumping

Qaradaghi, Vahid, Ahmadi, Vahid, Abaeiani, Gholamreza

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 424 KB

english, 2012

8

High-Performance Flexible TFT Circuits Using TIPS Pentacene and Polymer Blend on Plastic

Choi, Min Hee, Kim, Byung Soon, Jang, Jin

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 461 KB

english, 2012

9

Fast Terahertz Continuous-Wave Detector Based on Weakly Ionized Plasma

Hou, Lei, Shi, Wei

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 408 KB

english, 2012

10

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

De Michielis, Luca, Lattanzio, Livio, Ionescu, Adrian M.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 442 KB

english, 2012

11

Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth

Lee, Sanghoon, Law, Jeremy J. M., Carter, Andrew D., Thibeault, Brian J., Mitchell, William, Chobpattana, Varistha, Kramer, Stephan, Stemmer, Susanne, Gossard, Arthur C., Rodwell, Mark J. W.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 646 KB

english, 2012

12

Fully Gravure-Printed Flexible Full Adder Using SWNT-Based TFTs

Noh, Jinsoo, Jung, Kyunghwan, Kim, Joonseok, Kim, Sungho, Cho, Sungho, Cho, Gyoujin

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 681 KB

english, 2012

13

High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization

Wang, Chao-Lung, Lee, I-Che, Wu, Chun-Yu, Chou, Chia-Hsin, Yang, Po-Yu, Cheng, Yu-Ting, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 627 KB

english, 2012

14

$\Omega$-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

Richter, S., Sandow, C., Nichau, A., Trellenkamp, S., Schmidt, M., Luptak, R., Bourdelle, K. K., Zhao, Q. T., Mantl, S.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 450 KB

english, 2012

15

Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET

Park, Chan-Hoon, Ko, Myung-Dong, Kim, Ki-Hyun, Lee, Sang-Hyun, Yoon, Jun-Sik, Lee, Jeong-Soo, Jeong, Yoon-Ha

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 869 KB

english, 2012

16

Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

Barraud, S., Coquand, R., Casse, M., Koyama, M., Hartmann, J.-M., Maffini-Alvaro, V., Comboroure, C., Vizioz, C., Aussenac, F., Faynot, O., Poiroux, T.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 430 KB

english, 2012

17

Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

Mohata, D., Rajamohanan, B., Mayer, T., Hudait, M., Fastenau, J., Lubyshev, D., Liu, A. W. K., Datta, S.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 706 KB

english, 2012

18

NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications

Malobabic, Slavica, Salcedo, Javier A., Hajjar, Jean-Jacques, Liou, Juin J.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 215 KB

english, 2012

19

Characterization of Geometric Leakage Current of $ \hbox{GeO}_{2}$ Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions

Jung, Woo-Shik, Park, Jin-Hong, Lin, J.-Y. Jason, Wong, Simon, Saraswat, Krishna C.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 415 KB

english, 2012

20

Electric Field Assembled Anisotropic Dielectric Layer for Metal Core Printed Circuit Boards

Yoo, Myong-Jae, Cho, Hyun-Min, Kim, Seong-Hwan, Lim, Ho-Sun, Park, Seong-Dae, Lee, Woo-Sung, Kim, Jin-Seong, Seong, Tae-Geun, Jeong, Byoung-Jik, Nahm, Sahn

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 322 KB

english, 2012

21

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

Wang, Ming, Lv, Hangbing, Liu, Qi, Li, Yingtao, Xu, Zhongguang, Long, Shibing, Xie, Hongwei, Zhang, Kangwei, Liu, Xiaoyu, Sun, Haitao, Yang, Xiaoyi, Liu, Ming

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 485 KB

english, 2012

22

Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers

Madan, Himanshu, Saripalli, Vinay, Liu, Huichu, Datta, Suman

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 881 KB

english, 2012

23

Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

Lee, Myoung-Sun, Park, Byung-Gook, Cho, Il Hwan, Lee, Jong-Ho

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 483 KB

english, 2012

24

4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 $^{\circ}\hbox{C}$

Lien, Wei-Cheng, Tsai, Dung-Sheng, Lien, Der-Hsien, Senesky, Debbie G., He, Jr-Hau, Pisano, Albert P.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 388 KB

english, 2012

25

Effect of $\hbox{B}_{2}\hbox{H}_{6}$ Plasma Doping on the Shallow Trench Isolation in CMOS Image Sensor Device

Pyo, Sung Gyu, Park, Ji Hwan, Yang, Taek-Seung

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 783 KB

english, 2012

26

21-kV SiC BJTs With Space-Modulated Junction Termination Extension

Miyake, Hiroki, Okuda, Takafumi, Niwa, Hiroki, Kimoto, Tsunenobu, Suda, Jun

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 274 KB

english, 2012

27

$\hbox{1}/f$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

Betti Beneventi, Giovanni, Ferro, Massimo, Fantini, Paolo

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 269 KB

english, 2012

28

Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal

Wang, Lanxiang, Su, Shaojian, Wang, Wei, Yang, Yue, Tong, Yi, Liu, Bin, Guo, Pengfei, Gong, Xiao, Zhang, Guangze, Xue, Chunlai, Cheng, Buwen, Han, Genquan, Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 393 KB

english, 2012

29

Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications

Tsai, Tzu-I, Chen, Kun-Ming, Lin, Horng-Chih, Lin, Ting-Yao, Su, Chun-Jung, Chao, Tien-Sheng, Huang, Tiao-Yuan

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 505 KB

english, 2012

30

Reduction in Specific Contact Resistivity to $ \hbox{n}^{+}$ Ge Using $\hbox{TiO}_{2}$ Interfacial Layer

Jason Lin, J.-Y., Roy, Arunanshu M., Saraswat, Krishna C.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 313 KB

english, 2012

31

Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs

Monga, Udit, Khandelwal, Sourabh, Aghassi, Jasmin, Sedlmeir, Josef, Fjeldly, Tor A.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 268 KB

english, 2012

32

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

Huang, Xing, Van Brunt, Edward, Baliga, B. Jayant, Huang, Alex Q.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 444 KB

english, 2012

33

Phototransistors and Photoswitches From an Ultraclosely $\pi$-Stacked Organic Semiconductor

Ji, Zhuoyu, Shang, Liwei, Lu, Congyan, Wang, Long, Guo, Jingwei, Wang, Hong, Li, Dongmei, Liu, Ming

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 328 KB

english, 2012

34

A $\hbox{TiO}_{2}$ Nanowire MIS Photodetector With Polymer Insulator

Chang, Shoou-Jinn, Tsai, Tsung-Ying, Jiao, Zhi-Yong, Chiu, Chiu-Jung, Weng, Wen-Yin, Wang, Sin-Hui, Hsu, Cheng-Liang, Hsueh, Ting-Jen, Wu, San-Lien

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 159 KB

english, 2012

35

Oxide Trapping in the InGaAs–$\hbox{Al}_{2} \hbox{O}_{3}$ System and the Role of Sulfur in Reducing the $ \hbox{Al}_{2}\hbox{O}_{3}$ Trap Density

Alian, Alireza, Brammertz, Guy, Degraeve, Robin, Cho, Moonju, Merckling, Clement, Lin, Dennis, Wang, Wei-E, Caymax, Matty, Meuris, Marc, De Meyer, Kristin, Heyns, Marc

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 506 KB

english, 2012

36

A Novel pH Sensor of Extended-Gate Field-Effect Transistors With Laser-Irradiated Carbon-Nanotube Network

Chien, Yun-Shan, Tsai, Wan-Lin, Lee, I-Che, Chou, Jung-Chuan, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 431 KB

english, 2012

37

In-Plane-Gate Transparent $\hbox{SnO}_{2}$ Nanowire Transistors

Liu, Huixuan, Wan, Qing

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 568 KB

english, 2012

38

Announcing the IEEE Journal of Electron Devices Society

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 76 KB

english, 2012

39

Table of contents

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 64 KB

english, 2012

40

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 32 KB

english, 2012

41

Table of contents

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 51 KB

english, 2012

42

43rd IEEE Semiconductor Interference Specialist Conference

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 756 KB

2012

43

[Blank page - back cover]

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 5 KB

2012

44

IEEE Electron Device Letters publication information

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 149 KB

english, 2012

45

IEEE Electron Devices Society Meetings Calendar for 2012 (As of 9/17/2012)

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 42 KB

english, 2012

46

2013 IEEE International Reliability Physics Symposium (IRPS)

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 751 KB

2012

47

2012 IEEE membership form

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 1.34 MB

2012

48

Open Access [advertisement]

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 1.13 MB

2012

49

Special Issue on GaN Electronic Devices

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 410 KB

2012

50

2012 IEEE International Electron Devices Meeting

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 374 KB

2012

51

IEEE Journal of Electron Devices Society (J-EDS)

Journal:

IEEE Electron Device Letters

Année:

2012

Fichier:

PDF, 825 KB

2012