Volume 72; Issue none

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Solid-State Electronics
Volume 72; Issue none

Solid-State Electronics

Volume 72; Issue none

1

Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors

Kuei-Yi Chu, Shiou-Ying Cheng, Meng-Hsueh Chiang, Yi-Jung Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Wen-Chau Liu, Wen-Yu Cheng, Bin-Cian Lin

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2012

2

Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films

Zhaoliang Liao, Peng Gao, Yang Meng, Wangyang Fu, Xuedong Bai, Hongwu Zhao, Dongmin Chen

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 678 KB

english, 2012

3

Early effect of SiGe heterojunction bipolar transistors

Xiao-Bo Xu, He-Ming Zhang, Hui-Yong Hu, Jiang-Tao Qu

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 249 KB

english, 2012

4

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Vanessa Sbrugnera, Bertrand Grimbert, Christophe Gaquière

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 1.12 MB

english, 2012

5

Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

A. Vandooren, D. Leonelli, R. Rooyackers, K. Arstila, G. Groeseneken, C. Huyghebaert

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 861 KB

english, 2012

6

Improvement of n+-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal

M.C. Wang, T.C. Chang, S.W. Tsao, Y.Z. Chen, T.C. Hsu, D.J. Jan, C.F. Ai, J.R. Chen

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 367 KB

english, 2012

7

Reduction of the trap density at the organic–organic interface and resultant gate-bias dependency of the mobility in an organic thin-film transistor

Jin-Hyuk Bae, Yoonseuk Choi

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 525 KB

english, 2012

8

Improvement of AZO/p-a-SiC:H contact by the p-μc-Si:H insertion layer and its application to a-Si:H solar cells

Ping-Kuan Chang, Fu-Ji Tsai, Chun-Hsiung Lu, Chih-Hung Yeh, Na-Fu Wang, Mau-Phon Houng

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 465 KB

english, 2012

9

Electrical bistable properties of copper phthalocyanine at different deposition rates

K. Onlaor, B. Tunhoo, P. Keeratithiwakorn, T. Thiwawong, J. Nukeaw

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 898 KB

english, 2012

10

Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films

H. Mähne, L. Berger, D. Martin, V. Klemm, S. Slesazeck, S. Jakschik, D. Rafaja, T. Mikolajick

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 725 KB

english, 2012

11

Active matrix touch sensor detecting time-constant change implemented by dual-gate IGZO TFTs

Ya-Hsiang Tai, Hao-Lin Chiu, Lu-Sheng Chou

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2012

12

Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I–V and low frequency C–V measurement

Ja Sun Shin, Hagyoul Bae, Euiyoun Hong, Jaeman Jang, Daeyoun Yun, Jieun Lee, Dae Hwan Kim, Dong Myong Kim

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 467 KB

english, 2012

13

Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing

C. Varenne, A. Ndiaye, J. Brunet, G. Monier, L. Spinelle, A. Pauly, L. Bideux, B. Lauron, C. Robert-Goumet

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 931 KB

english, 2012

14

Comparison of transistor characteristics between excimer-laser and solid-phase crystallized poly-Si thin-film transistors

Mutsumi Kimura, Jun Taya, Akihiro Nakashima

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 559 KB

english, 2012

15

Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

S.N. Ong, K.S. Yeo, K.W.J. Chew, L.H.K. Chan, X.S. Loo, C.C. Boon, M.A. Do

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 256 KB

english, 2012

16

AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric

K.H. Lee, P.C. Chang, S.J. Chang, Y.K. Su

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 764 KB

english, 2012

17

Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature

Sueng Min Lee, Chong Gun Yu, Won-Ju Cho, Jong Tae Park

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 790 KB

english, 2012

18

Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface

Dawei Yan, Hai Lu, Dunjun Chen, Rong Zhang, Youdou Zheng, Xu Qian, Aidong Li

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 370 KB

english, 2012

19

Editorial Board

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 64 KB

english, 2012