Volume 118

Solid-State Electronics

Volume 118

1

Determination of minority carrier diffusion length of sprayed-Cu2ZnSnS4 thin films

Courel, Maykel, Valencia-Resendiz, E., Pulgarín-Agudelo, F.A., Vigil-Galán, O.

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 617 KB

english, 2016

2

Characterization and modeling of drain current local variability in 28 and 14nm FDSOI nMOSFETs

Ioannidis, E.G., Haendler, S., Josse, E., Planes, N., Ghibaudo, G.

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 10.52 MB

english, 2016

3

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer

Atmaca, G., Ardali, S., Tiras, E., Malin, T., Mansurov, V.G., Zhuravlev, K.S., Lisesivdin, S.B.

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.41 MB

english, 2016

4

Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

Brouzet, V., Salem, B., Periwal, P., Alcotte, R., Chouchane, F., Bassani, F., Baron, T., Ghibaudo, G.

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 848 KB

english, 2016

5

Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz

Gu, Siyuan, Min, Jie, Taur, Yuan, Asbeck, Peter M.

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.77 MB

english, 2016

6

Synthesis of nitrogen-doped ZnO nanoparticles by RF thermal plasma

Hiragino, Yuto, Tanaka, Toshimi, Takeuchi, Hiroshi, Takeuchi, Akira, Lin, Jie, Yoshida, Toshiyuki, Fujita, Yasuhisa

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.54 MB

english, 2016

7

Zero-bias microwave detectors based on array of nanorectifiers coupled with a dipole antenna

Kasjoo, Shahrir R., Singh, Arun K., Mat Isa, Siti S., Ramli, Muhammad M., Mohamad Isa, Muammar, Ahmad, Norhawati, Mohd Nor, Nurul I., Khalid, Nazuhusna, Song, Ai Min

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2016

8

A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs

Villena, M.A., Roldán, J.B., González, M.B., González-Rodelas, P., Jiménez-Molinos, F., Campabadal, F., Barrera, D.

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.39 MB

english, 2016

9

Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

Gu, Qun Jane, Li, James C., Tang, Adrian

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2016

10

Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts

Dubecký, František, Oswald, Jiří, Kindl, Dobroslav, Hubík, Pavel, Dubecký, Matúš, Gombia, Enos, Šagátová, Andrea, Boháček, Pavol, Sekáčová, Mária, Nečas, Vladimír

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 529 KB

english, 2016

11

Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors

Gawron, W., Martyniuk, P., Kębłowski, A., Kolwas, K., Stępień, D., Piotrowski, J., Madejczyk, P., Pędzińska, M., Rogalski, A.

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2016

12

Editorial Board

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 55 KB

english, 2016