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Volume 765

MRS Proceedings

Volume 765

1

Investigation and Modeling of Fluorine Co-Implantation Effects on Dopant Redistribution

Diebel, M., Chakravarthi, S., Dunham, S.T., Machala, C.F., Ekbote, S., Jain, A.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 103 KB

english, 2003

2

Flat-band Voltage Study Of Atomic-layer-Deposited Aluminum-oxide Subjected To Spike Thermal Annealing

Mehta, V. R., Fiory, A. T., Ravindra, N. M., Ho, M. Y., Wilk, G. D., Sorsch, T. W.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 279 KB

english, 2003

3

B Diffusion in Low Energy B/BF2 Implants with Pre-Amorphization of Different Species

Li, Hong-Jyh, Rhoad, Todd, Zeitzoff, Peter, Tichy, Robin, Larson, Larry, Banerjee, Sanjay

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 112 KB

english, 2003

4

Segregation and Diffusion of Sb Compared to as for Ultra-Shallow Implantation Into Silicon

Krüger, D., Zaumseil, P., Melnik, V., Kurps, R., Formanek, P., Bolze, D.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 564 KB

english, 2003

5

Dopant Diffusion Simulation in Thin-SOI

Li, Hong-Jyh, Tichy, Robin, Ross, Jonathon, Gelpey, Jeff, Stotts, Ben, Galloway, Heather

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 125 KB

english, 2003

6

Theory and Simulation of Dopant Diffusion in SiGe

Liu, Chun-Li, Orlowski, Marius, Thean, Aaron, Barr, Alex, White, Ted, Nguyen, Bich-Yen, Rueda, Hernan, Liu, Xiang-Yang

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 260 KB

english, 2003

7

Indium in silicon: a study on diffusion and electrical activation.

Scalese, S., Magna, A. La, Mannino, G., Privitera, V., Bersani, M., Giubertoni, D., Solmi, S., Pichler, P.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 116 KB

english, 2003

8

Diffusion of Boron in Germanium and Si1-xGex (x>50%) alloys Suresh Uppal

Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Bollani, M.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 166 KB

english, 2003

9

Boron Segregation and Out-diffusion in Single-Crystal Si 1-y C y

Stewart, E. J., Sturm, J.C.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 93 KB

english, 2003

10

Physics-Based Diffusion Simulations for Preamorphized Ultrashallow Junctions

Cowern, N.E.B., Colombeau, B., Lampin, E., Cristiano, F., Claverie, A., Lamrani, Y., Duffy, R., Venezia, V., Heringa, A., Wang, C.C., Zechner, C.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 365 KB

english, 2003

11

Experiment and Modelisation Results on Laser Thermal Processing for Ultra-Shallow Junction Formation: Influence of Laser Pulse Duration

Venturini, J., Hernandez, M., Zahorski, D., Kerrien, G., Sarnet, T., Debarre, D., Boulmer, J., Laviron, C., Semeria, M.-N., Camel, D., Santailler, J.-L.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 92 KB

english, 2003

12

A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS

Lindsay, R., Pawlak, B., Kittl, J., Henson, K., Torregiani, C., Giangrandi, S., Surdeanu, R., Vandervorst, W., Mayur, A., Ross, J., McCoy, S., Gelpey, J., Elliott, K., Pages, X., Satta, A., Lauwers, A

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 380 KB

english, 2003

13

Silicides for 65 nm CMOS and Beyond

Kittl, Jorge A., Lauwers, Anne, Chamirian, Oxana, Dal, Mark Van, Akheyar, Amal, Richard, Olivier, Lisoni, Judit G., Potter, Muriel De, Lindsay, Richard, Maex, Karen

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2003

14

Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon

Qin, Zudian, Dunham, Scott T.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 360 KB

english, 2003

15

Low Schottky Barrier on N-Type Si for N-Channel Schottky Source/Drain MOSFETs

Tao, Meng, Udeshi, Darshak, Agarwal, Shruddha, Basit, Nasir, Maldonado, Eduardo, Kirk, Wiley P.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 110 KB

english, 2003

16

Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control

Gao, Wei, Conley, John F., Sharp, Yoshi Ono

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 89 KB

english, 2003

17

Evaluation of tetrakis(diethylamino)hafnium Precursor in the Formation of Hafnium Oxide Films Using Atomic Layer Deposition

Inman, Ronald, Deshpande, Anand, Jursich, Gregory

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 89 KB

english, 2003

18

LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors

Kwon, Hyun Goo, Oh, Youngwoo, Park, Jung Woo, Lee, Young Kuk, Kim, Chang Gyoun, Kim, Yunsoo

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 109 KB

english, 2003

19

Performance of Pt-based Low Schottky Barrier Silicide Contacts on Weakly Doped Silicon

Larrieu, Guilhem, Dubois, Emmanuel, Wallart, Xavier

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 137 KB

english, 2003

20

Low temperature Si0.85 Ge0.15 oxynitridation in wet-nitric oxide ambient

Dasgupta, Anindya, Takoudis, Christos G.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 126 KB

english, 2003

21

Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si

Fortunato, G., Mariucci, L., Privitera, V., Magna, A. La, Whelan, S., Mannino, G.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 754 KB

english, 2003

22

Thin HfO2 Films Deposited via Alternating Pulses of Hf(NO3)4 and HfCl4

Conley, J.F., Ono, Y., Solanki, R., Tweet, D.J.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 82 KB

english, 2003

23

Process Optimization for Multiple-Pulses Laser Annealing for Boron Implanted Silicon with Germanium Pre-amorphization

Poon, Debora, Cho, Byung Jin, Lu, Yong Feng, Tan, Leng Seow, Bhat, Mousumi, See, Alex

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 154 KB

english, 2003

24

The Prs2O3 /Si(001) Interface: a Mixed Si-Pr Oxide

Schmeißer, Dieter, Dabrowski, Jarek, Müssig, Hans-Joachim

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 147 KB

english, 2003

25

Limiting Native Oxide Regrowth for High-k Gate Dielectrics

Choi, K., Harris, H., Gangopadhyay, S., Temkin, H.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 97 KB

english, 2003

26

Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-x Gex Technology for Nanoscale CMOS

Liu, Jing, Mo, Hongxiang, Öztürk, Mehmet C.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 436 KB

english, 2003

27

A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

Hori, Mitsuaki, Tamura, Naoyoshi, Kase, Masataka, Sakuma, Hiroko, Ohota, Hiroyuki, Shigeno, Mayumi, Kataoka, Yuuzi

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 179 KB

english, 2003

28

Short-period (Si14 / Si0.75 Ge0.25)20 Superlattices for the Growth of High-quality Si0.75 Ge0.25

Rahman, M.M., Tambo, T., Tatsuyama, C.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 764 KB

english, 2003

29

NiSi formation in the Ni(Ti) /SiO 2 /Si System

Lee, R.T.P., Chi, D.Z., Chua, S.J.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 188 KB

english, 2003

30

A Technique for Source/Drain Elevation using Implantation Mediated Selective Etching

Huda, M. Q., Sakamoto, K.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 560 KB

english, 2003

31

Physical-Chemical Evolution of Hf-aluminates upon Thermal Treatments

Crivelli, B., Alessandri, M., Alberici, S., Brazzelli, D., Elbaz, A. C., Frabboni, S., Ghidini, G., Maes, J. W., Ottaviani, G., Pavia, G., Wiemer, C.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2003

32

Kinetics Of Charge Generation During Formation Of Hf And Zr Silicate Dielectrics

Gougousi, Theodosia, Kelly, M. Jason, Parsons, Gregory N.

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 300 KB

english, 2003

33

Formation of NiSi-Silicided p + n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing

Wang, Chao-Chun, Lin, Chiao-Ju, Chen, Mao-Chieh

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 742 KB

english, 2003

34

High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies

Caymax, Matty, Bender, H., Brijs, B., Conard, T., DeGendt, S., Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., Richard, O., Vandervorst, W., Elshocht, S. Van, Zhao, C., Maes, J.W., Daté, L., Pique,

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 2.63 MB

english, 2003