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Volume 533

MRS Proceedings

Volume 533

1

Thermal Stability Of SiGe/Si Quantum Well Structures Grown By APCVD

Zhao, Q. X., Nur, O., Södervall, U., Patel, C. J., Willandera, M., Holtz, P.O., de Boer, W.B.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 875 KB

english, 1998

2

Strong Deviation Of The Lattice Parameter In Si1- x-yGe xC y Epilayers From Vegard's Rule

Stangl, J., Zerlauth, S., Schäffler, F., Bauer, G., Berti, M., Salvador, D. De, Drigo, A. V., Romanato, F.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 384 KB

english, 1998

3

Band Alignment of Si1-xGex And Si1-x-y.GexCy Quantum Wells On Si (001)

Rowell, N. L., Williams, R. L., Aers, G. C., Lafontaine, H., Houghton, D. C., Brunner, K., Eberl, K., Schmidt, O., Winter, W.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 481 KB

english, 1998

4

The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

Thompson, P.E., Silvestre, C., Twigg, M., Jernigan, G., Simons, D.S.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 343 KB

english, 1998

5

Epitaxially Grown N+ Phosphorus Collector Peaks In Highfrequency hbt's with Implanted Emitters

Visser, C. C. G, Nanver, L. K., Bogaard, A. Van Den

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.32 MB

english, 1998

6

Wet And Dry Oxidation of Polycrystalline SixGe1-x Films

Hellberg, P.-E., Zhang, S.-L., d'Heurle, F. M., Petersson, C. S.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 364 KB

english, 1998

7

Characterization of SiGeC Using Pt(SiGeC) Silicide Schottky Contacts

Peterson, Jeff J., Hunt, Charles E., Robinson, McDonald, SCott, Robin

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.01 MB

english, 1998

8

Ellipsometry Studies, Optical Properties, And Band Structure of Gel.1- yC y, Ge-RICH Si1- x-yGe xC y, And Boron-Doped Si1- xGe xAlloys

Junge, Kelly E., Lange, Ruidiger, Dolan, Jennifer M., Zollner, Stefan, Humlfcek, Josef, Dashiell, M. W., Hits, D. A., Orner, B. A., Kolodzey, James

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 270 KB

english, 1998

9

Light Emission From Erbium Doped Si1-x XGe1Heterostructures

Evans-Freeman, J H, Naveed, A T, Huda, M Q, eaker, A R, oughton, D C, right, A C

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 980 KB

english, 1998

10

Erbium Doped Si/Sige Waveguide Diodes: Optical And Electrical Characterization

Neufeld, E., Luigart, A., Sticht, A., Brunner, K., Abstreiter, G.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 319 KB

english, 1998

11

Evidence For Heterojunction Effects in Polycrystalline Si1- xGe x Thin Film Transistors With Si Caps

Wang, Albert W., Saraswat, Krishna C.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 402 KB

english, 1998

12

Photonic Crystals Based onMacroporous Silicon

Lehmann, V., Grüning, U., Birner, A.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.86 MB

english, 1998

13

Effect of Interface-Related Deep Levels on high Sensitivity of Schottky Diode Photodetector Based on Ultrathin InGaAs Film on Si

Kvit, A. V., Yakimov, M. V., Konstantinov, P. L., Naidenkov, M. N.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 926 KB

english, 1998

14

Lateral Ordering of Self-Assembled Ge Islands

Zhu, Jian-Hong, Brunner, K., Abstreiter, G.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 2.55 MB

english, 1998

15

Stacked Layers of C-Induced Ge Quantum Dots

Schmidt, O. G., Eberl, K., Schieker, S., Jin-Phillipp, N. Y., Phillipp, F., Auerswald, J., Lamperter, P.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.85 MB

english, 1998

16

Using Growth Kinetics for Nanoengineering of Si-Ge Surfaces

Goldfarb, I., Briggs, G. A. D.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 3.02 MB

english, 1998

17

Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition

Leifeld, O., Grützmacher, D., Müller, B., Kern, K.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 3.60 MB

english, 1998

18

Toward RF System-Level Integration: Process Integration Issues in Sige BICMOS

Freeman, G., Schonenberg, K., Ahlgren, D., Jeng, S-J., Nguyen-Ngoc, D., Stein, K., Colavito, D., Subbanna, S., Harame, D., Meyerson, B.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 889 KB

english, 1998

19

Measurements of Confined Energy Levels and Coulomb Charging Effect in Self-Assembled Ge Quantum Dots by Admittance Spectroscopy

Zhang, S. K., Jiang, Z. M., Zhu, H. J., Lu, F.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 348 KB

english, 1998

20

Real-Time Observation of Ti Silicide Epitaxial Islands Growth with the Photoelectron Emission Microscopy

Yang, W., Ade, H., Nemanich, R. J.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 2.19 MB

english, 1998

21

Magnetron Sputter Heteroepitaxy of Si1- x.Ge x/Si(001): The Evolution of the Cross-Hatched Surface

Vögeli, B., Kummer, M., Känel, H. Von

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.74 MB

english, 1998

22

Si/Ge/Si(001) Magnetron Sputter Heteroepitaxy: the Initial Stages of “Hut”- Cluster Overgrowth

Vögeli, B., Kummer, M., Känel, H. Von

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 2.90 MB

english, 1998

23

Role Of Surface Instability And Anisotropy On Strain Relaxation Of Sige On Si(110)

Deng, X., Krishnamurthy, M.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 2.31 MB

english, 1998

24

Fabrication Of Sub 30 Nanometer Sheets Of Single Crystalline Silicon

Flemitng, J. G.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1998

25

Feasibility Of Novel Si-Based Interminiband Lasers

Sun, Gregory, Friedman, Lionel, Soref, Richard A.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 248 KB

english, 1998

26

Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission

Chang, C. L., Rokhinson, L. P., Sturm, J. C.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 293 KB

english, 1998

27

Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells

Hartmann, R., Gennser, U., Grützmacher, D., Sigg, H., Müller, E., Ensslin, K.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.85 MB

english, 1998

28

Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition

Mocuta, A. C., Greve, D. W.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 349 KB

english, 1998

29

The Application of Novel Chemical Precursors for the Preparation of Si-Ge-C Heterostructures and Superlattices

Nesting, David C., Kouvetakis, John, Lorentzen, Julie, Menéndez, José

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.49 MB

english, 1998

30

Limitations to the use of Sb as a Surfactant During SiGe MBE

Jernigan, Glenn G., Silvestre, Conrad L., Fatemi, Mohammad, Twigg, Mark E., Thompson, Phillip E.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 960 KB

english, 1998

31

Influence Of Growth Conditions On The Thermal Quenching Of Photoluminescence From Sige/Si Quantum Structures

Buyanova, I. A., Chen, W. M., Ni, W.-X., Hansson, G. V., Monemar, B.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 440 KB

english, 1998

32

SiGe RF - Electronic: Devices, Circuits, Competitors, Markets

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 4.13 MB

english, 1998

33

Low-Energy Plasma Enhanced Chemical Vapor Deposition

Rosenblad, Carsten, Graf, Thomas, Dommann, Alex, Von känel, Hans

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 886 KB

english, 1998

34

Low Temperature Epitaxy Of Si/Si1-xGex/Si Multilayers By Low Pressure Rtcvd For Very Thin Soi Applications

McNeill, D.W., Gay, D.L., Lip, X., Armstrong, B.M., Gamble, H.S.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.07 MB

english, 1998

35

Carrier Transport and Velocity Overshoot in Strained Si On Sige Heterostructures

Ferry, David K., Formicone, Gabriele, Vasileska, Dragica

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 2.10 MB

english, 1998

36

A Selective/Non-Selective Epitaxy Process For A Novel Sige Hbt Architecture

Schiz, J., Bonar, J. M., Shburn, P

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 2.58 MB

english, 1998

37

Photoluminescence Of Sisnc Alloys Grown On (100) Si Substrates

Wright, N., Khan, A.T., Berger, P.R., Guarin, F.J., Iyer, S.S.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 402 KB

english, 1998

38

A Novel Layer-By-Layer Hetero-Epitaxy Of Germanium On Silicon (100) Surface

Sugahara, S., Matsuyama, M., Hosaka, K., Ikeda, K., Uchida, Y., Matsumura, M.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 870 KB

english, 1998

39

Comparative Growth Kinetics Of Sige In A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor And Anomalies During Growth of Thin Si Layers on Sige

Caymax, Matity, Loo, Roger, Brijs, Bert, Vandervorst, Wilfried, Howard, David J, Kimura, Kenji, Nakajima, Kaoru

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.33 MB

english, 1998

40

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

Morrya, A., Sakuraba, M., Matsuura, T., Murota, J., Kawashima, I., Yabumoto, N.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 282 KB

english, 1998

41

Growth and Characterization of Epitaxially Stabilized Pseudomorphic α-Sn/Si Heterostructures

Min, Kyu Sung, Atwater, Harry A.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 979 KB

english, 1998

42

Evidence for Substitutional C, Ordering Effects and Interdiffusion in Epitaxial GE-C and GE-RICH GE-SI-C Alloys

Yang, Bi-Ke, Weber, W. H., Krishnamurthy, M.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 792 KB

english, 1998

43

Characteristics of Surface-Channel Strained Si1-yCy n-MOSFETS

Rim, K., Mitchell, T. O., Hoyt, J. L., Fountain, G., Gibbons, J. F.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 415 KB

english, 1998

44

Characterizations Of Zr/Si1-x-yGexCy After Rapid Thermal Annealing

Aubry-Fortuna, V., Barthula, M., Meyer, F., Eyal, A., Cytermann, C., Eizenberg, M., Chaix-Pluchery, O.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.20 MB

english, 1998

45

Raman Spectroscopy of Epitaxial Si/Si1-xGe, xHeterostructures

Liu, Ran, Zollner, Stefan, Liaw, Ming, O'meara, David, Cave, Nigel

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 340 KB

english, 1998

46

Investigation of Plastic Relaxation in Si1-xGex/Si Deposited by Selective Epitaxy

Wickenhäuser, S., Vescan, L.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1998

47

Mosaic Crystal Tilts and Their Relationship to Dislocation Structure, Surface Roughness and Growth Conditions in Relaxed SiGe Layers

Wallis, D. J., Robbins, D. J., Pidduck, A. J., Williams, G. M., Churchill, A., Newey, J.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.85 MB

english, 1998

48

Device And Fabrication Issues of High Performance Si/Sige Fets

Arafa, M., Adesida, I., Ismail, K.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 864 KB

english, 1998

49

Evidence of InterDiffusion Effect In Stacked Polycrystalline Sige/Si Layers For Cmos Gate Application

Hernandez, C., Campidelli, Y., Sagnes, I., Henrisey, E., Martin, F., Bensahel, D.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 887 KB

english, 1998

50

Impact of The ge Content on The Radiation Hardness of Hetero-Junction Diodes in Sige Strained Layers

Ohyama, H., Simoen, E., Claeys, C., Takami, Y., Hayama, K., Hakata, T., Tokuyama, J., Kobayashi, K., Sunaga, H., Poortmans, J., Caymax, M.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 333 KB

english, 1998

51

Epitaxial Growth And Electronic Characterization Of Carboncontaining Silicon-Based Heterostructures

Hoyt, J. L., Mitchell, T. O., Rim, K., Singh, D. V., Gibbons, J. F.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.26 MB

english, 1998

52

Loading Effects During Low-Temperature Seg Of Si And SiGe

De Boer, W. B., Terpstra, D., Dekker, R.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.75 MB

english, 1998

53

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

Mooney, P. M., Chu, J. O., Ott, J. A., Jordan-Sweet, J. L., Meyerson, B. S., Dubbelday, W. B., Lagnado, I., Kavanagh, K. L.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 376 KB

english, 1998