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Volume 1736

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MRS Proceedings
Volume 1736

MRS Proceedings

Volume 1736

1

Low Resistive and Low Absorptive Nitride-Based Tunnel junctions

Minamikawa, Daichi, Takasuka, Daiki, Ino, Masataka, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 721 KB

english, 2015

2

Wrap around field plate technique for GaN Schottky barrier diodes

Kolli, Sowmya, Hickman, Robert, Alphenaar, Bruce W

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 477 KB

english, 2014

3

Optimization of Carrier Distributions in Periodic Gain Structures toward Blue VCSELs

Matsui, Kenjo, Horikawa, Kosuke, Kozuka, Yugo, Ikeyama, Kazuki, Komori, Daisuke, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 475 KB

english, 2014

4

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

Shetty, Arjun, Roul, Basanta, Mukundan, Shruti, Chandan, Greeshma, Mohan, Lokesh, Vinoy, K J, Krupanidhi, S B

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 667 KB

english, 2014

5

Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers

Hayashi, K., Yasuda, T., Katsuno, S., Takeuchi, T., Kamiyama, S., Iwaya, M., Akasaki, I.

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 757 KB

english, 2015

6

MOCVD of GaN-based HEMT structures on 8 inch silicon substrates

Laboutin, Oleg, Lo, Chien-Fong, Kao, Chen-Kai, O’Connor, Kevin, Johnson, Wayne, Hill, Daily

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 3.53 MB

english, 2015

7

Growth and Characterization of a-plane In0.2Ga0.8N/ GaN hetrostructures on r-Sapphire

Mukundan, Shruti, Mohan, Lokesh, Chandan, Greeshma, Roul, Basanta, S.B.Krupanidhi,

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2014

8

Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment

Pletschen, W., Linkohr, St., Kirste, L., Cimalla, V., Müller, S., Himmerlich, M., Krischok, S., Ambacher, O.

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 5.54 MB

english, 2014

9

HVPE GaN with Low Concentration of Point Defects for Power Electronics

Reshchikov, M. A., McNamara, J.D., Usikov, A., Helava, H., Makarov, Yu.

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 998 KB

english, 2015

10

GaN HEMT Drain-Lag Performance Dependence on GaN Channel Quality

Kamada, Yoichi, Okamoto, Naoya, Sato, Masaru, Yamada, Atsushi, Kotani, Junji, Ishiguro, Tetsuro, Ohki, Toshihiro, Ozaki, Shirou, Makiyama, Kozo, Watanabe, Keiji, Joshin, Kazukiyo

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 619 KB

english, 2015

11

Fabrication and Lasing Properties of Single-Crystalline Semiconductor Microspheres with Anisotropic Crystal Structures

Okamoto, Shinya, Ichikawa, Satoshi, Minowa, Yosuke, Ashida, Masaaki

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2015

12

Impact of Nitridation on Structural and Optical Properties of Epitaxial GaN Films Grown on M-Plane Sapphire by PAMBE

Mukundan, Shruti, Mohan, Lokesh, Chandan, Greeshma, Roul, Basanta, Krupanidhi, S.B.

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 683 KB

english, 2015

13

GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

Sun, Zheng, Usami, Shigeyoshi, Lu, Di, Ishii, Takahiro, Olsson, Marc, Yamashita, Kouhei, Mitsunari, Tadashi, Honda, Yoshio, Amano, Hiroshi

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 613 KB

english, 2015

14

Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers

Su, Jie, Armour, Eric A., Krishnan, Balakrishnan, Lee, Soo Min, Papasouliotis, George D.

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 868 KB

english, 2014

15

Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures

As, D.J., Kemper, R., Mietze, C., Wecker, T., Lindner, J.K.N., Veit, P., Dempewolf, A., Bertram, F., Christen, J.

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 16.26 MB

english, 2014

16

Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

Kozuka, Y., Ikeyama, K., Yasuda, T., Takeuchi, T., Kamiyama, S., Iwaya, M., Akasaki, I.

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 79.38 MB

english, 2015

17

GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process

Arefin, Nazmul, Kane, Matthew H., Larson, Preston R., Whiteside, Vince R., Hossain, Khalid, Pritchett, Brittany N., Johnson, Matthew B., McCann, Patrick J.

Journal:

MRS Proceedings

Année:

2015

Langue:

english

Fichier:

PDF, 336.63 MB

english, 2015