Campagne de collecte 15 septembre 2024 – 1 octobre 2024 C'est quoi, la collecte de fonds?

Volume 1194

Main
MRS Proceedings
Volume 1194

MRS Proceedings

Volume 1194

1

Relationships between Interface Structures and Electrical Properties in the High-k/III–V System

Yasuda, Tetsuji, Miyata, Noriyuki, Urabe, Yuji, Ishii, Hiroyuki, Itatani, Taro, Takagi, Hideki, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Ohtake, Akihiro, Yokoyama, Masafumi, Hoshii, Takuya,

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 1.42 MB

english, 2009

2

Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrate by Conventional and Cross-sectional Raman Spectroscopy

Takei, Munehisa, Kosemura, Daisuke, Nagata, Kohki, Akamatsu, Hiroaki, Mayuzumi, Satoru, Yamakawa, Shinya, Wakabayashi, Hitoshi, Ogura, Atsushi

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 475 KB

english, 2009

3

Epitaxial Growth of Highly Crystallized InSb films on Si Substrate by MBE and Their Devices Properties

Kunimi, Yoshihisa, Fujita, Hiromi, Sakurai, Ayano, Akiyama, Shinichiro, Miyahara, Masatoshi, Shibata, Yoshihiko

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 141 KB

english, 2009

4

Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices

Moreau, Mathieu, Munteanu, Daniela, Autran, Jean-Luc, Bellenger, Florence, Mitard, Jérome, Houssa, Michel

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 230 KB

english, 2009

5

Catalytic Forming Gas Anneal on III-V/Ge MOS Systems

Wang, Wei-E, Lin, Han-Chung, Brammertz, Guy, Delabie, Annelies, simoen, eddy, Caymax, Matty, Meuris, Marc, Heyns, Marc

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 247 KB

english, 2009

6

Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates

Molle, Alessandro, Brammertz, Guy, Lamagna, Luca, Spiga, Sabina, Meuris, Marc, Fanciulli, Marco

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 294 KB

english, 2009

7

Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs

Guo, Dechao, Schonenberg, Kathryn, Chen, Jie, Jaeger, Daniel, Kulkarni, Pranita, Kwon, Unoh, Liang, Yue, Liu, Joyce, Song, Liyang, Arnaud, Franck, Bu, Huiming, Chudzik, Michael, Henson, William K, Old

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 310 KB

english, 2009

8

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

Lubyshev, Dmitri, Fastenau, Joel M., Wu, Ying, Synder, Andrew, Liu, Amy W. K., Bulsara, Mayank T., Fitzgerald, Eugene A., Urteaga, Miguel, Ha, Wonill, Bergman, Joshua, Choe, M. J., Brar, Bobby, Hoke,

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2009

9

SiGe channels for higher mobility CMOS devices

Naumann, Andreas, Kelwing, Torben, Trentzsch, Martin, Kronholz, Stephan, Kammler, Thorsten, Flachowsky, Stefan, Herrmann, Tom, Kücher, Peter, Bartha, Johann W

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 191 KB

english, 2009

10

Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

Miotti, Leonardo, Paz Bastos, Karen, Radtke, Cláudio, Lucovsky, Gerald

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 69 KB

english, 2009

11

Novel Zirconium Formamidinate Precursor for the ALD of ZrO2

Li, Huazhi, Shenai, Deo V, Lehn, Jean-Sebastien

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 75 KB

english, 2009

12

High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap

Heyns, Marc, Bellenger, Florence, Brammertz, Guy, Caymax, Matty, De Gendt, Stefan, De Jaeger, Brice, Delabie, Annelies, Eneman, Geert, Groeseneken, Guido, Houssa, Michel, Leonelli, Daniele, Lin, Denni

Journal:

MRS Proceedings

Année:

2009

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2009