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Volume 93; Issue 1-4

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Journal of Crystal Growth
Volume 93; Issue 1-4

Journal of Crystal Growth

Volume 93; Issue 1-4

1

Crystal growth of GaAs and AlGaAs by OMVPE using triethylarsenic as arsenic source

Shizuo Fujita, Masayuki Imaizumi, Soichiro Araki, Yoshikazu Takeda, Akio Sasaki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 440 KB

english, 1988

2

The use of organic As precursors in the low pressure MOCVD of GaAs

A. Brauers, O. Kayser, R. Kall, H. Heinecke, P. Balk, H. Hofmann

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.31 MB

english, 1988

3

GaAs growth using tertiarybutylarsine and trimethylgallium

C.A. Larsen, N.I. Buchan, S.H. Li, G.B. Stringfellow

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 437 KB

english, 1988

4

Gas phase and surface reactions in the MOCVD of GaAs from triethylgallium, trimethylgallium, and tertiarybutylarsine

Thomas R. Omstead, Penny M. Van Sickle, Peter W. Lee, Klavs F. Jensen

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 623 KB

english, 1988

5

A novel organo-lithium based production method for trimethylindium

F.W. Reier, P. Wolfram, H. Schumann

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 257 KB

english, 1988

6

Less hazardous MOCVD growth of InP using solid red-phosphorous and H2 plasma

Masami Naitoh, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 323 KB

english, 1988

7

Growth of GaSb by MOVPE; Optimization of electrical quality with respect to growth rate, pressure, temperature and IIIV ratio

S.K. Haywood, N.J. Mason, P.J. Walker

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 434 KB

english, 1988

8

Zn related electroluminescent properties in MOVPE grown GaN

H. Amano, K. Hiramatsu, M. Kito, N. Sawaki, I. Akasaki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 458 KB

english, 1988

9

MOVPE of AlxGa1−xAs alloys above 850° C

P. Basmaji, A. Leycuras, J. Leymarie, P. Gibart, D. Gauthier, J.C. Portal, B. Gil

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 289 KB

english, 1988

10

Elementary processes and rate-limiting factors in MOVPE of GaAs

Max Tirtowidjojo, Richard Pollard

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 585 KB

english, 1988

11

Kinetic simulation of gas phase reactions in MOVPE growth

Hitoshi Tanaka, Junji Komeno

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 375 KB

english, 1988

12

13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs

R.M. Lum, J.K. Klingert, D.W. Kisker, S.M. Abys, F.A. Stevie

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 582 KB

english, 1988

13

IR diode laser probing of OMVPE kinetics

D.K. Gaskill, V. Kolubayev, N. Bottka, R.S. Sillmon, J.E. Butler

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 545 KB

english, 1988

14

Raman investigations on AsH3 decomposition in MOVPE

Y. Monteil, R. Favre, P. Raffin, J. Bouix, M. Vaille, P. Gibart

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 429 KB

english, 1988

15

Ultraviolet absorption spectra of metalorganic molecules diluted in hydrogen gas

Hideo Itoh, Masanobu Watanabe, Seiji Mukai, Hiroyoshi Yajima

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 364 KB

english, 1988

16

Study of nucleation and growth of clusters on nominal and vicinal (100)GaAs by metalorganic vapor phase epitaxy

Koh Matsumoto, Junnichi Hikada, Ryuji Tsunoda

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 922 KB

english, 1988

17

Recent progress in atomic layer epitaxy of III–V compounds

S.M. Bedair, B.T. McDermott, Y. Ide, N.H. Karam, H. Hashemi, M.A. Tischler, M. Timmons, J.C.L. Tarn, N. El-Masry

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.68 MB

english, 1988

18

Atomic layer epitaxy for the growth of heterostructure devices

S.P. Denbaars, P.D. Dapkus, C.A. Beyler, A. Hariz, K.M. Dzurko

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 518 KB

english, 1988

19

A new versatile, large size MOVPE reactor

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 721 KB

english, 1988

20

A novel MOVPE reactor with a rotating substrate

E. Woelk, H. Beneking

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 269 KB

english, 1988

21

A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

G.S. Tompa, M.A. McKee, C. Beckham, P.A. Zawadzki, J.M. Colabella, P.D. Reinert, K. Capuder, R.A. Stall, P.E. Norris

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 555 KB

english, 1988

22

Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressure

A. Mircea, A. Ougazzaden, P. Dasté, Y. Gao, C. Kazmierski, J.-C. Bouley, A. Carenco

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 868 KB

english, 1988

23

New reactor design for growth of InP and related alloys

S.H. Groves, S.C. Palmateer, J.W. Caunt, D.L. Hovey

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 692 KB

english, 1988

24

Planar selective growth of InP by MOVPE

K. Nakai, T. Sanada, S. Yamakoshi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 936 KB

english, 1988

25

Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnS

Shizuo Fujita, Akira Tanabe, Takao Sakamoto, Masashi Isemura, Shigeo Fujita

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 508 KB

english, 1988

26

Effects of hydrogen on growth mechanism of GaAs in chemical beam epitaxy

K. Nagata, Y. Iimura, Y. Aoyagi, S. Namba, S. Den, A. Moritani

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 367 KB

english, 1988

27

Raman spectroscopy and flow visualization studies of MOVPE reactors

Y. Monteil, R. Favre, A. Bekkaoui, P. Raffin, J. Bouix, J. Marcillat, P. Dutto

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.11 MB

english, 1988

28

Safety aspects of MOVPE in research and development: An example

L.M.F. Kaufmann, M. Heuken, R. Tilders, K. Heime, H. Jürgensen, M. Heyen

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 664 KB

english, 1988

29

Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar

R. Meyer, D. Grützmacher, H. Jürgensen, P. Balk

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 492 KB

english, 1988

30

Growth and characterization of InAs/GaAs monolayer structures

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 496 KB

english, 1988

31

Large area growth of extremely uniform AlGaAs/GaAs quantum well structures for laser applications by effective LP-MOVPE

D. Schmitz, G. Strauch, J. Knauf, H. Jürgensen, M. Heyen, K. Wolter

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 461 KB

english, 1988

32

Exact determination of superlattice structure by small-angle x-ray diffraction

M. Sugawara, M. Kondo, S. Yamazaki, K. Nakajima

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 365 KB

english, 1988

33

The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure

J.D. Lambkin, D.J. Dunstan, E.P. O'Reilly, B.R. Butler

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 485 KB

english, 1988

34

Growth of AlInAs and heterostructures on InP by OMVPE

H. Kamei, K. Hashizume, M. Murata, N. Kuwata, K. Ono, K. Yoshida

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 759 KB

english, 1988

35

Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPE

F. Iikawa, P. Motisuke, J.A. Brum, M.A. Sacilotti, A.P. Roth, R.A. Masut

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 466 KB

english, 1988

36

Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE

H. Ohno, S. Ohtsuka, A. Ohuchi, T. Matsubara, H. Hasegawa

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 383 KB

english, 1988

37

Influence of different growth techniques on the quality of GaInAs-InP quantum well structures grown by adduct-MOVPE

K. Streubel, F. Scholz, G. Laube, R.J. Dieter, E. Zielinski, F. Keppler

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 483 KB

english, 1988

38

OMVPE conditions for GaInAs/InP heterointerfaces and superlattices

Yasuyuki Miyamoto, Katsumi Uesaka, Makoto Takadou, Kazuhito Furuya, Yasuharu Suematsu

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 437 KB

english, 1988

39

Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE

M. Engel, R.K. Bauer, D. Bimberg, D. Grützmacher, H. Jürgensen

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 490 KB

english, 1988

40

Fabrication technique for GaInAsP/InP quantum wire structure by LP-MOVPE

P. Dasté, Y. Miyake, M. Cao, Y. Miyamoto, S. Arai, Y. Suematsu, K. Furuya

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 586 KB

english, 1988

41

Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE

M. Irikawa, I.J. Murgatroyd, T. Ijichi, N. Matsumoto, A. Nakai, S. Kashiwa

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 448 KB

english, 1988

42

High-quality InGaAsP/InP single-quantum wells and superlattice structures grown by low-pressure metalorganic vapor phase epitaxy

M. Kondo, S. Yamazaki, M. Sugawara, H. Okuda, K. Kato, K. Nakajima

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 573 KB

english, 1988

43

Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures

C.P. Kuo, R.M. Fletcher, T.D. Osentowski, M.G. Craford, D.W. Nam, N. Holonyak Jr., K.C. Hsieh, J.E. Fouquet

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.39 MB

english, 1988

44

Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase

Tohru Suzuki, Akiko Gomyo, Sumio Iijima

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 924 KB

english, 1988

45

Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

C. Nozaki, Y. Ohba, H. Sugawara, S. Yasuami, T. Nakanisi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.10 MB

english, 1988

46

Crystalline and electronic energy structure of OMVPE-grown AlGaInP/GaAs

M. Kondow, H. Kakibayashi, S. Minagawa, Y. Inoue, T. Nishino, Y. Hamakawa

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 589 KB

english, 1988

47

Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition

O. Ueda, M. Takikawa, M. Takechi, J. Komeno, I. Umebu

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 2.95 MB

english, 1988

48

Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing

P. Gavrilovic, F.P. Dabkowski, K. Meehan, J.E. Williams, W. Stutius, K.C. Hsieh, N. Holonyak Jr., M.A. Shahid, S. Mahajan

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.06 MB

english, 1988

49

The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition

Russell D. Dupuis, C.J. Pinzone

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 777 KB

english, 1988

50

Initial stage of MOCVD growth of GaAs on Si

Sachiko Onozawa, Takashi Ueda, Masahiro Akiyama

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.88 MB

english, 1988

51

Dislocation interactions in strained-layer structures grown on GaAs and Si substrates

N. Hamaguchi, T.P. Humphreys, D.J. Moore, C.A. Parker, S.M. Bedair, J.C.L. Tarn, B.-L. Jiang, N. El-Masry, Z.J. Radzimski, G.A. Rozgonyi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 2.13 MB

english, 1988

52

Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice

Yoshio Watanabe, Yoshiaki Kadota, Hiroshi Okamoto, Masahiro Seki, Yoshiro Ohmachi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 725 KB

english, 1988

53

The effects of strain on the growth of lattice mismatched superlattices

K.J. Monserrat, J.N. Tothill, J. Haigh, R.H. Moss, C.S. Baxter, W.M. Stobbs

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.44 MB

english, 1988

54

Dislocation-density studies in MOCVD GaAs on Si substrates

M. Shimizu, M. Enatsu, M. Furukawa, T. Mizuki, T. Sakurai

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 833 KB

english, 1988

55

Influence of MOVPE growth parameters on the structural and optical properties of GaAs on Si(100)

A. Freundlich, J.C. Grenet, G. Neu, A. Leycuras, C. Vèrié, P. Gibart, G. Landa, R. Carles

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 648 KB

english, 1988

56

Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si

N. Hayafuji, S. Ochi, M. Miyashita, M. Tsugami, T. Murotani, A. Kawagishi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 869 KB

english, 1988

57

MOCVD growth and characterization of GaAs and GaP grown on Si substrates

T. Soga, Y. Kohama, K. Uchida, M. Tajima, T. Jimbo, M. Umeno

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 600 KB

english, 1988

58

Growth and characterization of strained layers of GaAsxP1−x

M.R. Leys, H. Titze, L. Samuelson, J. Petruzzello

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.25 MB

english, 1988

59

Characterization of mismatched InAsGaAs heterostructures grown by metalorganic chemical vapor deposition

P.K. York, C.J. Kiely, G.E. Fernández, J.N. Baillargeon, J.J. Coleman

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.26 MB

english, 1988

60

Heteroepitaxy of InGaAs on GaAs substrate with InAlAs intermediate layer

Takashi Ueda, Sachiko Onozawa, Masahiro Akiyama, Masaaki Sakuta

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1006 KB

english, 1988

61

Hetero-epitaxial growth of InP on Si substrates by LP-MOVPE

H. Horikawa, Y. Kawai, M. Akiyama, M. Sakuta

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 437 KB

english, 1988

62

Epitaxial growth of InP on Si by OMVPE — defect reduction in epitaxial InP using InAsxP1−xInP superlattices

A. Seki, F. Konushi, J. Kudo, M. Koba

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 884 KB

english, 1988

63

Residual impurities in epitaxial layers grown by MOVPE

M. Hata, N. Fukuhara, Y. Zempo, M. Isemura, T. Yako, T. Maeda

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 497 KB

english, 1988

64

Carbon incorporation in GaAs layer grown by atomic layer epitaxy

K. Mochizuki, M. Ozeki, K. Kodama, N. Ohtsuka

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 430 KB

english, 1988

65

Evidence for deep centers in n-InP grown by MOVPE

M. Benzaquen, D. Walsh, M. Beaudoin, K. Mazuruk, N. Puetz

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 549 KB

english, 1988

66

Deep levels and minority carrier lifetime in MOVPE p-type GaAs

P.J. Wang, T.F. Kuech, M.A. Tischler, P.M. Mooney, G.J. Scilla, F. Cardone

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 631 KB

english, 1988

67

Semi-insulating cobalt doped indium phosphide grown by MOCVD

K.L. Hess, S.W. Zehr, W.H. Cheng, J. Pooladdej, K.D. Buehring, D.L. Wolf

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 508 KB

english, 1988

68

Evaluation of some manganese feedstocks for MOCVD

G.I. Christiansz, T.J. Elms, G.N. Pain, R.R. Pierson

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 428 KB

english, 1988

69

Gas phase and surface reactions in Si doping of GaAs by silanes

Harry K. Moffat, T.F. Kuech, Klavs F. Jensen, P.-J. Wang

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 699 KB

english, 1988

70

Systematic study on Si and Se doping of MOVPE GaAs

H. Sakaguchi, R. Suzuki, T. Meguro

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 388 KB

english, 1988

71

Anomalous behaviour of dopants in atmospheric pressure MOVPE of InP

S. Cole, J.S. Evans, M.J. Harlow, A.W. Nelson, S. Wong

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 516 KB

english, 1988

72

Low pressure MOVPE growth of Si-doped Ga0.5In0.5P using Si2H6

Hitoshi Hotta, Isao Hino, Tohru Suzuki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 529 KB

english, 1988

73

The control and modeling of doping profiles and transients in MOVPE growth

T.F. Kuech, P.-J. Wang, M.A. Tischler, R. Potemski, G.J. Scilla, F. Cardone

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 612 KB

english, 1988

74

The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions

M.A. Tischler, H. Baratte, T.F. Kuech, P.-J. Wang

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 577 KB

english, 1988

75

Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 674 KB

english, 1988

76

Abrupt Mg doping profiles in GaAs grown by metalorganic vapor phase epitaxy

G. Landgren, M. Rask, S.G. Andersson, A. Lundberg

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 303 KB

english, 1988

77

Silicon migration during MOVPE of AlGaAs/GaAs laser structures

E. Veuhoff, H. Baumeister, R. Treichler

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 552 KB

english, 1988

78

Thermal stability of ZnSe epilayer grown by MOVPE

Tokuo Yodo, Ken Yamashita

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 556 KB

english, 1988

79

Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition

Mitsuru Ekawa, Yoichi Kawakami, Tsunemasa Taguchi, Akio Hiraki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 943 KB

english, 1988

80

Selectively embedded epitaxial growth of ZnSe by low-pressure MOCVD using dimethylzinc and dimethylselenium

Y. Yamasaki, H. Komatsu, Y. Tsunekawa, T. Asaka, H. Iwano, H. Ohshima

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 747 KB

english, 1988

81

Metalorganic molecular beam epitaxy of ZnSe films using dimethylzinc and hydrogen selenide

H. Oniyama, S. Yamaga, A. Yoshikawa, H. Kasai

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 764 KB

english, 1988

82

The preparation of ZnS:Mn electroluminescent layers by MOCVD using new manganese sources

M. Migita, O. Kanehisa, M. Shiiki, H. Yamamoto

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 517 KB

english, 1988

83

Nitrogen-doped p-type ZnSe films grown by MOVPE

Akira Ohki, Noriyoshi Shibata, Koshi Ando, Akinori Katsui

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 434 KB

english, 1988

84

Growth and properties of lithium-doped ZnSe films by atmospheric pressure metalorganic vapor phase epitaxy

Akihiko Yoshikawa, Shin-ichiro Muto, Shigeki Yamaga, Haruo Kasai

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 498 KB

english, 1988

85

Low-loss MOVPE-grown ZnSeZnS superlattice optical waveguide

Toshiya Yokogawa, Toshihiro Fujita, Mototsugu Ogura, Takao Kajiwara

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 471 KB

english, 1988

86

Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVD

Yoichi Kawakami, Tsunemasa Taguchi, Akio Hiraki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 490 KB

english, 1988

87

Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II–VI materials

S.J.C. Irvine, J.B. Mullin, J. Giess, J.S. Gough, A. Royle, G. Crimes

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1988

88

Domain structures of CdTe layers grown by MOCVD on offset-angle sapphire substrates

Kenji Maruyama, Mitsuo Yoshikawa, Hiroshi Takigawa

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 599 KB

english, 1988

89

Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition

M. Shigeta, Y. Fujii, A. Ogura, K. Furukawa, A. Suzuki, S. Nakajima

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 823 KB

english, 1988

90

MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates

M. Razeghi, M. Defour, F. Omnes, P. Maurel, E. Bigan, O. Acher, J. Nagle, F. Brillouet, J.C. Portal

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 485 KB

english, 1988

91

The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

A.W. Nelson, P.C. Spurdens, S. Cole, R.H. Walling, R.H. Moss, S. Wong, M.J. Harding, D.M. Cooper, W.J. Devlin, M.J. Robertson

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.06 MB

english, 1988

92

Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE

K. Shimoyama, M. Katoh, M. Noguchi, Y. Inoue, H. Gotoh, Y. Suzuki, T. Satoh

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 769 KB

english, 1988

93

GaAs/Ga0.65Al0.35As DBR surface emitting lasers grown by OMVPE

A. Ibaraki, K. Kawashima, K. Furusawa, T. Ishikawa, T. Yamagushi, T. Niina

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 660 KB

english, 1988

94

Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides

M.D. Scott, J.R. Riffat, I. Griffith, J.I. Davies, A.C. Marshall

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1005 KB

english, 1988

95

Extremely low threshold InGaAsP/InP DFB laser by MOCVD/LPE hybrid process

N. Yoshida, T. Kimura, K. Mizuguchi, Y. Ohkura, T. Murotani, A. Kawagishi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 644 KB

english, 1988

96

A self-aligned ridge substrate laser fabricated by single-step MOVPE

Akio Yoshikawa, Atsuya Yamamoto, Masanori Hirose, Takashi Sugino, Gota Kano, Iwao Teramoto

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 950 KB

english, 1988

97

Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers

R. Bhat, E. Kapon, D.M. Hwang, M.A. Koza, C.P. Yun

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.46 MB

english, 1988

98

Improvements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE

S. Takano, T. Sasaki, H. Yamada, M. Kitamura, I. Mito, T. Suzuki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 542 KB

english, 1988

99

High quality InGaAsPInP for multiple quantum well laser diodes grown by low-pressure OMVPE

P.J.A. Thijs, T. van Dongen, P.I. Kuindersma, J.J.M. Binsma, L.F. Tiemeyer, J.M. Lagemaat, D. Moroni, W. Nijman

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 558 KB

english, 1988

100

MOCVD grown InP/InGaAs structures for optical receivers

E.J. Thrush, C.G. Cureton, A.T.R. Briggs

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 950 KB

english, 1988

101

High gain InP/InGaAs heterojunction bipolar transistors grown by OMCVD

R. Bhat, J.R. Hayes, H. Schumacher, M.A. Koza, D.M. Hwang, M.H. Meynadier

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 694 KB

english, 1988

102

MOCVD growth of CdTe and CdHgTe using a new cadmium source

L.M. Smith, J. Thompson, A.C. Jones, P.R. Jacobs, S.A. Rushworth

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 77 KB

english, 1988

103

Reflectance-difference studies of organometallic chemical vapor deposition growth transients on (100) GaAs

E. Colas, D.E. Aspnes, R. Bhat, V.G. Keramidas, M.A. Koza, A.A. Studna

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 81 KB

english, 1988

104

Chemical boundary layers in MOCVD: The return of the stagnant layer

M.H.J.M. De Croon, L.J. Giling

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 101 KB

english, 1988

105

Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxy

Michio Sato, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 68 KB

english, 1988

106

Low pressure OMCVD growth of device quality GaAs on InP substrates for OEIC applications

R. Bhat, Y. Lo, C. Caneau, D.M. Hwang, C. Zah, M.A. Koza

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 83 KB

english, 1988

107

Metalorganic vapor phase heteroepitaxial growth of (Al)GaAs on InP for device applications

P. Demeester, A. Ackaert, I. Moerman, R. Baets, P. Lagasse

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 112 KB

english, 1988

108

Subject index

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 289 KB

english, 1988

109

Fourth international conference on metalorganic vapor phase epitaxy ICMOVPE-IV: Hakone, Japan, 16–20 May 1988

Journal:

Journal of Crystal Growth

Année:

1988

Fichier:

PDF, 20 KB

1988

110

Preface

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 155 KB

english, 1988

111

Triethylarsenic and arsine as co-reagents: The novel manipulation of in-situ GaAs OMCVD growth chemistry to improve growth efficiency and safety

D.M. Speckman, J.P. Wendt

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 410 KB

english, 1988

112

Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE

J. Knauf, D. Schmitz, G. Strauch, H. Jürgensen, M. Heyen, A. Melas

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 501 KB

english, 1988

113

Me3In preparation and zone refining of adducts for high quality InP and GaInAs MOVPE

G. Laube, U. Kohler, J. Weidlein, F. Scholz, K. Streubel, R.J. Dieter, N. Karl, M. Gerdon

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 566 KB

english, 1988

114

OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx

M.J. Jou, Y.T. Cherng, H.R. Jen, G.B. Stringfellow

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 786 KB

english, 1988

115

GaSb heterostructures grown by MOVPE

E.T.R. Chidley, S.K. Haywood, R.E. Mallard, N.J. Mason, R.J. Nicholas, P.J. Walker, R.J. Warburton

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.75 MB

english, 1988

116

Effects of growth parameters on layer properties for InP and related alloys grown by MOCVD

K. Eguchi, Y. Ohba, M. Kushibe, M. Funamizu, T. Nakanisi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 667 KB

english, 1988

117

Raman scattering of (AlxGa1−x)0.5In0.5P quaternary alloys grown by MOVPE

Minoru Kubo, Masaya Mannoh, Yasuhito Takahashi, Mototsugu Ogura

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 366 KB

english, 1988

118

In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3

Peter W. Lee, Thomas R. Omstead, Donald R. McKenna, Klavs F. Jensen

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 733 KB

english, 1988

119

UV excimer laser photochemistry of gaseous and surface adsorbed organometallics

Y. Zhang, M. Stuke

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 986 KB

english, 1988

120

CARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3

R. Lückerath, P. Tommack, A. Hertling, H.J. Koss, P. Balk, K.F. Jensen, W. Richter

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 596 KB

english, 1988

121

Immiscible growth of In1−xGaxP in low-vacuum MOVPE

Kazunari Ozasa, Masaaki Yuri, Shigehiro Nishino, Hiroyuki Matsunami

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 472 KB

english, 1988

122

Surface processes in laser-atomic layer epitaxy (laser-ALE) of GaAs

T. Meguro, T. Suzuki, K. Ozaki, Y. Okano, A. Hirata, Y. Yamamoto, S. Iwai, Y. Aoyagi, S. Namba

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 370 KB

english, 1988

123

The pulse reactor—A high-efficiency, high-precision low-pressure MOCVD machine

J. Van Suchtelen, J.E.M. Hogenkamp, W.G.J.H.M. Van Sark, L.J. Giling

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 820 KB

english, 1988

124

Growth characteristics of a vertical rotating-disk OMVPE reactor

C.A. Wang, S. Patnaik, J.W. Caunt, R.A. Brown

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 566 KB

english, 1988

125

Low temperature selective epitaxy of III–V compounds by laser assisted chemical vapor deposition

N.H. Karam, H. Liu, I. Yoshida, B.-L. Jiang, S.M. Bedair

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 914 KB

english, 1988

126

Uniform (Al)GaAs crystal growth and microwave HIFETs grown by barrel-reactor MOCVD

Fumihiko Nakamura, Hiroji Kawai

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1988

127

Characterization of MOVPE-grown AlGaAs/GaAs single quantum wells by intersubband infrared absorption

J.Y. Andersson, U. Westergren

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 404 KB

english, 1988

128

LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells

D. Grützmacher, R. Meyer, M. Zachau, P. Helgesen, A. Zrenner, K. Wolter, H. Jürgensen, F. Koch, P. Balk

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 633 KB

english, 1988

129

Photoreflectance characterization of OMVPE GaAs on Si

N. Bottka, D.K. Gaskill, R.J.M. Griffiths, R.R. Bradley, T.B. Joyce, C. Ito, D. McIntyre

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 485 KB

english, 1988

130

Direct MOVPE growth of InP on GaAs substrates

Akio Yoshikawa, Takashi Sugino, Akira Nakamura, Gota Kano, Iwao Teramoto

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.11 MB

english, 1988

131

Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy

M.K. Lee, K.C. Huang, D.S. Wuu, H.H. Tung, K.Y. Yu

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 282 KB

english, 1988

132

The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy

T.F. Kuech, G.J. Scilla, F. Cardone

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 590 KB

english, 1988

133

Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3

Kunihiko Uwai, Hiroshi Nakagome, Kenichiro Takahei

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 478 KB

english, 1988

134

A study of p-type doping for AlGaInP grown by low-pressure MOCVD

Y. Ohba, Y. Nishikawa, C. Nozaki, H. Sugawara, T. Nakanisi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 365 KB

english, 1988

135

Thermal stability of nearly lattice-matched ZnSSe/GaAs interface grown by MOVPE

T. Kanda, I. Suemune, K. Yamada, Y. Kan, M. Yamanishi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 365 KB

english, 1988

136

Iodine-doped low-resistivity n-type ZnSe films grown by MOVPE

Noriyoshi Shibata, Akira Ohki, Akinori Katsui

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 386 KB

english, 1988

137

Wide bandgap II–VI compound semiconductor superlattices grown by metalorganic molecular beam epitaxy

Nobuaki Teraguchi, Yasushi Takemura, Ryuhei Kimura, Makoto Konagai, Kiyoshi Takahashi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 493 KB

english, 1988

138

Growth and characterisation of ZnTe and ZnTeCdTe superlattices on GaAs substrates

P.A. Clifton, J.T. Mullins, P.D. Brown, G.J. Russell, A.W. Brinkman, J. Woods

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.65 MB

english, 1988

139

Ultra-pure organotellurium precursors for the low temperature MOVPE growth of II/VI compound semiconductors

Deodatta V. Shenai-Khatkhate, Paul Webb, David J. Cole-Hamilton, Graham W. Blackmore, J. Brian Mullin

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 445 KB

english, 1988

140

Photo-assisted MOCVD of CdTe using an excimer laser

S. Fujii, Y. Fujita, T. Iuchi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 561 KB

english, 1988

141

Electrical properties and surface effects in MOVPE grown (Hg,Cd)Te

J.T. Mullins, P.A. Clifton, G.J. Russell, A.W. Brinkman, J. Woods

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 586 KB

english, 1988

142

MOVPE growth and characterization of I-III-VI2 Chalcopyrite compounds

K. Hara, T. Shinozawa, J. Yoshino, H. Kukimoto

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 608 KB

english, 1988

143

GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE

J.I. Davies, A.C. Marshall, M.D. Scott, R.J.M. Griffiths

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.32 MB

english, 1988

144

Long-lived MOCVD-grown 780 nm SBA laser with reduced influence of regrowth interface

Y. Mihashi, Y. Nagai, Y. Ohta, T. Tanaka, K. Ikeda, W. Susaki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 445 KB

english, 1988

145

Defect generation sue to surface corrugation in InGaAsP/InP DFB laser structures grown by MOVPE on grating-formed InP substrates

Kenji Sato, Mamoru Oishi, Yoshio Itaya, Masashi Nakao, Yoshihiro Imamura

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 837 KB

english, 1988

146

Doping optimization in InGaAsP DH lasers and improved characteristics in BH lasers grown by MOVPE

T. Sasaki, H. Yamada, S. Takano, M. Kitamura, I. Mito, T. Suzuki, H. Hoshino

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 411 KB

english, 1988

147

MOVPE grown MQW pin diodes for electro-optic modulators and photodiodes with enhanced electron ionisation coefficient

J.S. Roberts, M.A. Pate, P. Mistry, J.P.R. David, R.B. Franks, M. Whitehead, G. Parry

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 605 KB

english, 1988

148

MOVPE studies for a monolithically integrated DH laser/HBT laser driver

P. Speier, U. Koerner, A. Nowitzki, F. Grotjahn, F.J. Tegude, K. Wünstel

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1022 KB

english, 1988

149

MOVCD growth of selectively doped AlInAs/GaInAs heterostructures

Y. Mori, M. Kamada

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 909 KB

english, 1988

150

Numerical analysis of heterointerface in AlGaAs/GaAs hemt structure grown by MOVPE

K. Kasai, J. Komeno

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 392 KB

english, 1988

151

Uniform and abrupt InGaP/GaAs selectively doped heterostructures grown by MOVPE for HEMT ICs

T. Ohori, M. Takechi, M. Suzuki, M. Takikawa, J. Komeno

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 601 KB

english, 1988

152

OMVPE growth of AlInAs and device quality AlInAs-based heterostructures

Leye Aina, Mike Mattingly, Ayub Fathimulla, Eric A. Martin, Tom Loughran, Lisa Stecker

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 606 KB

english, 1988

153

InGaAsP/InP heterojunction bipolar transistor grown by MOVPE

Yuzaburoh Ban, Soichi Kimura, Motoji Morisaki, Mototsugu Ogura, Jun Shibata

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 877 KB

english, 1988

154

High-Tc superconducting film growth by OMCVD

H. Abe, T. Nakamori, T. Kanamori, S. Shibata

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 58 KB

english, 1988

155

Direct observation of extended atomically flat islands at the heterointerfaces of OMVPE AlGaAs-GaAs single quantum wells

F.J. Stutzler, S. Fujieda, M. Mizuta, K. Ishida

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 59 KB

english, 1988

156

First observation of stepped interfaces of GaAs-AlGaAs on tilted substrates by cathodoluminescence

K. Wada, A. Kozen, H. Fushimi, N. Inoue

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 138 KB

english, 1988

157

Characterization of a GaAs/HgCdTe interface formed by MOCVD

C.J. Rossouw, S.R. Glanvill, M.S. Kwietniak, G.N. Pain, T. Warminski, I.J. Wilson

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 177 KB

english, 1988

158

Author index

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 988 KB

english, 1988

159

Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system

Jun-ichi Nishizawa, Toru Kurabayashi

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 1.04 MB

english, 1988