Volume 72; Issue 4

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Journal of Applied Physics
Volume 72; Issue 4

Journal of Applied Physics

Volume 72; Issue 4

1

A study of the kink‐related excess low‐frequency noise in silicon‐ on‐insulator n‐metal‐oxide‐semiconductor transistors operated at liquid helium temperatures

Simoen, E., Dierickx, B., Claeys, C.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.14 MB

english, 1992

2

Magnetic hysteresis in thin ferromagnetic films

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 864 KB

english, 1992

3

A study of minority carrier lifetime versus doping concentration in n‐type GaAs grown by metalorganic chemical vapor deposition

Lush, G. B., MacMillan, H. F., Keyes, B. M., Levi, D. H., Melloch, M. R., Ahrenkiel, R. K., Lundstrom, M. S.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.09 MB

english, 1992

4

Photoreflection study on the surface electric field of delta‐doped GaAs grown by molecular beam epitaxy

Liu, D. G., Chang, K. H., Lee, C. P., Hsu, T. M., Tien, Y. C.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 771 KB

english, 1992

5

Solutions of the heat conduction equation in multilayers for photothermal deflection experiments

McGahan, William A., Cole, K. D.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.60 MB

english, 1992

6

Models for numerical treatment of multicomponent diffusion in simple phases

Andersson, Jan‐Olof, Agren, John

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 919 KB

english, 1992

7

Bounds for field fluctuations in two-phase materials

Axell, JoÌrgen

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 672 KB

english, 1992

8

Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide

Demichelis, F., Pirri, C. F., Tresso, E.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.12 MB

english, 1992

9

Theory of atomic level sliding friction between ideal crystal interfaces

Sokoloff, J. B.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.48 MB

english, 1992

10

Thermally induced stacking faults distributed inhomogeneously in Czochralski silicon crystals

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 651 KB

english, 1992

11

Generation and transport of 140 kJ ribbon electron beam

Arzhannikov, A. V., Nikolaev, V. S., Sinitsky, S. L., Smirnov, A. V., Yushkov, M. V., Zotkin, R. P.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 544 KB

english, 1992

12

a-Si:F and a-Si:F:H prepared by ion-beam-assisted reactive deposition

Zhang, S., Brodie, D. E.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.12 MB

english, 1992

13

Study of optical dispersion parameters of WO3 polycrystalline thin films

Davazoglou, D., Donnadieu, A.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1992

14

Luminescent properties of ZnS:Mn films deposited by spray pyrolysis

Falcony, C., Garcia, M., Ortiz, A., Alonso, J. C.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 652 KB

english, 1992

15

Gyrotron-backward-wave-oscillator experiments utilizing a high current, high voltage, microsecond electron accelerator

Spencer, Thomas A., Gilgenbach, Ronald M., Choi, Jin J.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 727 KB

english, 1992

16

Characterization of vacancy-type defects in Se-implanted GaAs by means of a slow positron beam

Fujii, Satoshi, Shikata, Shinichi, Wei, Long, Tanigawa, Shoichiro

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 771 KB

english, 1992

17

Optical and structural properties of ternary alloy AlxGa1−xAs/AlAs multiple-quantum-well structures

Dabbicco, M., Cingolani, R., Ferrara, M., Tapfer, L., Fischer, A., Ploog, K.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.30 MB

english, 1992

18

A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation

Zhang, J. F., Taylor, S., Eccleston, W.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.06 MB

english, 1992

19

Erratum: ‘‘Growth and characterization of reactively sputtered thin-film platinum oxides’’ [J. Appl. Phys. 69, 1596 (1991)]

McBride, J. R., Graham, G. W., Peters, C. R., Weber, W. H.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 320 KB

english, 1992

20

Characterization of microporous Si by flow calorimetry: Comparison with a hydrophobic SiO2 molecular sieve

Canham, L. T., Groszek, A. J.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1992

21

SiAs related photoluminescence emissions in low-temperature AlxGa1−xAs grown by molecular beam epitaxy

Souza, P. L., Rao, E. V. K., Alexandre, F.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 673 KB

english, 1992

22

Maxwell displacement-current generation due to trans-cis photoisomerization in monolayer Langmuir–Blodgett film

Majima, Yutaka, Kanai, Yuichiro, Iwamoto, Mitsumasa

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 828 KB

english, 1992

23

Observation of inverse domains in high Tc superconductors

Schuster, Th., Koblischka, M. R., Ludescher, B., Kronmüller, H.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.09 MB

english, 1992

24

An improved layered ferrite slab waveguide with a corrugated interface for mm-wave radiation

Sidick, Erkin, Seki, Ryoichi

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 639 KB

english, 1992

25

A kinetic study on tungsten deposition from SiH4 and WF6

van der Jeugd, C. A., Janssen, G. C. A. M., Radelaar, S.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1992

26

Magnetoresistance peaks in the neighborhood of coercivity in magneto-optical recording media

Hajjar, Roger A., Mansuripur, M.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.39 MB

english, 1992

27

Nonresonant third order susceptibility measurements in a nematic liquid crystal-PCH-5

Philip, John, Prasada Rao, T. A.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 543 KB

english, 1992

28

A new GaAs sawtooth-doping-superlatticed switching device

Sun, Chung-Yih, Liu, Wen-Chau

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 847 KB

english, 1992

29

Thin film reaction kinetics of niobium/aluminum multilayers

Coffey, K. R., Barmak, K., Rudman, D. A., Foner, S.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.44 MB

english, 1992

30

Electrodeposition of thin yttria-stabilized zirconia layers using glow-discharge plasma

Ogumi, Zempachi, Uchimoto, Yoshiharu, Tsuji, Yoichiro, Takehara, Zen-ichiro

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1018 KB

english, 1992

31

Longitudinal optical phonon modes in a ZnSe-ZnTe strained-layer superlattice

Cui, Jie, Wang, Hailong, Gan, Fuxi

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 767 KB

english, 1992

32

Influence of compensation on 77 K free carrier absorption in n-ZnS

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 604 KB

english, 1992

33

Characterization of praseodymium-doped InGaP epilayer grown by liquid phase epitaxy

Lai, M. Z., Chang, L. B.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 750 KB

english, 1992

34

Polarization forces and conductivity effects in electrorheological fluids

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 964 KB

english, 1992

35

Characterization of ultrathin oxide prepared by low-temperature wafer loading and nitrogen preannealing before oxidation

Wu, S. L., Lee, C. L., Lei, T. F., Liang, M. S.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.03 MB

english, 1992

36

Permeability of highly compressible porous medium

Kataja, M., Rybin, A., Timonen, J.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 648 KB

english, 1992

37

Some band structure related optical and photoelectrical properties of Pb1−xEuxSe (0≤x≤0.2)

Herrmann, K. H., Möllmann, K.-P., Tomm, J. W., Böttner, H., Lambrecht, A., Tacke, M.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 858 KB

english, 1992

38

Residual ion current as a limiting factor in plasma opening switch performance

Goyer, J. R., Kortbawi, D., Roth, I. S., Childers, F. K., Sincerny, P. S.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 838 KB

english, 1992

39

Effect of ohmic contact conductance on the distribution of surface and bulk currents in semiconductor planar devices

Huo, Chong-ru, Gu, Ben-yuan, Coluzza, C.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 764 KB

english, 1992

40

On the normal acceleration sensitivity of contoured quartz resonators stiffened by quartz cover plates supported by clips

Zhou, Y. S., Tiersten, H. F.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.33 MB

english, 1992

41

Etching polymer films with ultraviolet laser pulses of long (10–400 μs) duration

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 765 KB

english, 1992

42

Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1−xSbx

Chin, V. W. L., Egan, R. J., Tansley, T. L.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 956 KB

english, 1992

43

Kinetics of diffusion growth of silicides in silicon–thin-metal-film systems

Barg, A. I., Bokstein, B. S., Klinger, L. M.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 945 KB

english, 1992

44

High-resistivity GaAs grown by high-temperature molecular-beam epitaxy

Polyakov, A. Y., Stam, M., Milnes, A. G., Wilson, R. G., Fang, Z. Q.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 594 KB

english, 1992

45

Frequency selection and transient dynamics in single-mode lasers with optical feedback

Hernández-García, E., Abraham, N. B., San Miguel, M., De Pasquale, F.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.67 MB

english, 1992

46

Effects of thermal annealing on the magnetization dynamics of vitrovac amorphous ribbons

Valenzuela, R., Irvine, J. T. S.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 695 KB

english, 1992

47

Coverage-time dependence during island growth at a solid surface with application to diamond deposition from the gas phase

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 985 KB

english, 1992

48

High-resistivity GaSb grown by molecular-beam epitaxy

Polyakov, A. Y., Stam, M., Milnes, A. G., Wilson, R. G., Fang, Z. Q., Rai-Choudhury, P., Hillard, R. J.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 786 KB

english, 1992

49

Photobehavior of paramagnetic anion antisites in plastically deformed GaAs

Benchiguer, T., Mari, B., Schwab, C., Wu, Ju, Wang, Guangyu

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 739 KB

english, 1992

50

The plasma properties of laser-ablated SiO2

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.53 MB

english, 1992

51

Growth kinetics of silicon dioxide on silicon in an inductively coupled rf plasma at constant anodization currents

Choksi, A. J., Lal, R., Chandorkar, A. N.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.19 MB

english, 1992

52

The identification of Si donor states in AlxGa1−xAs by photoluminescence

Kang, Junyong, Huang, Qisheng

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 722 KB

english, 1992

53

Resolution limitations in focused ion beam damage-induced masking for photoelectrochemical etching of GaAs

Khare, Reena, Hu, Evelyn

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1992

54

Strain effects on normal incidence hole intersubband absorption in a p-type semiconductor quantum well

Teng, D., Lee, C., Eastman, L. F.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 600 KB

english, 1992

55

Time-resolved optical emission and electron energy distribution function measurements in rf plasmas

Stalder, K. R., Anderson, C. A., Mullan, A. A., Graham, W. G.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.07 MB

english, 1992

56

Passivation effects of polyphenylene sulphide on the surface of GaAs

Bhide, R. S., Bhoraskar, S. V., Rao, V. J.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 661 KB

english, 1992

57

Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A. Amore, Sobiesierski, Z., Sacks, R. N.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 954 KB

english, 1992

58

Investigation of the kinetic mechanism of the Ar+-ion-enhanced Cl2/GaAs{110} etch rate phenomenon: Dependence on the reactant flux ratio

DeLouise, L. A.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.23 MB

english, 1992