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Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSb
Shin-ichiro Gozu, Teruo Mozume, Hiroshi IshikawaVolume:
323
Année:
2011
Langue:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2011.01.109
Fichier:
PDF, 354 KB
english, 2011