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Gas source molecular beam epitaxy growth of heterojunction bipolar transistors containing 1 monolayer δ−Be
J.E. Cunningham, T.Y. Kuo, A. Ourmazd, K. Goossen, W. Jan, F. Storz, F. Ren, C.G. FonstadVolume:
111
Année:
1991
Langue:
english
Pages:
6
DOI:
10.1016/0022-0248(91)91031-5
Fichier:
PDF, 537 KB
english, 1991