Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test
Severino, Andrea, Anzalone, Ruggero, Piluso, Nicolò, Vitanza, Elisa, Carbone, Beatrice, Russo, Alfio, Coffa, SalvoVolume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.472
Date:
July, 2020
Fichier:
PDF, 708 KB
2020
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