[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Simulation of a Short-Circuit Rugged Trench IGBT with a JFET Connected to a SiC Schottky Rectifier
Arnold, Thorsten, Elpelt, Rudolf, Thees, Hans-Jurgen, Imperiale, Ilaria, Philippou, Alexander, Hirler, Franz, Hauf, Moritz, Baburske, Roman, Sandow, ChristianAnnée:
2020
DOI:
10.1109/ISPSD46842.2020.9170175
Fichier:
PDF, 1.54 MB
2020
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