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[IEEE 2020 IEEE Symposium on VLSI Circuits - Honolulu, HI, USA (2020.6.16-2020.6.19)] 2020 IEEE Symposium on VLSI Circuits - A 29.2 Mb/mm 2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit
Yokoyama, Yoshisato, Tanaka, Miki, Tanaka, Koji, Morimoto, Masao, Yabuuchi, Makoto, Ishii, Yuichiro, Tanaka, ShinjiAnnée:
2020
DOI:
10.1109/VLSICircuits18222.2020.9162985
Fichier:
PDF, 509 KB
2020