Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
Kenji Uchida, Masahiko Kawata, Tao Yang, Shigeo Goto, Tomoyoshi Mishima, Atsuko Niwa, Jun GotohVolume:
28
Année:
1999
Langue:
english
Pages:
6
DOI:
10.1007/s11664-999-0022-1
Fichier:
PDF, 1.44 MB
english, 1999