Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C
Abou Hamad, Valdemar, Abi Tannous, Tony, Soueidan, Maher, Gremillard, Laurent, Fabregue, Damien, Penuelas, Jose, Zaatar, YoussefVolume:
110
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2020.113694
Date:
July, 2020
Fichier:
PDF, 2.07 MB
2020
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