Electrical performances of InAs/GaAs0.1Sb0.9 heterostructure junctionless TFET with dual material gate and gaussian doped source
Xie, Haiwu, Liu, Hongxia, Chen, Shupeng, Han, Tao, Wang, ShulongJournal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab9b01
Date:
June, 2020
Fichier:
PDF, 1.78 MB
2020
File converter
Plus de résultats de recherche
More benefits 
