Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress
Lin, Dong, Su, Wan-Ching, Chang, Ting-Chang, Chen, Hong-Chih, Tu, Yu-Fa, Yang, Jianwen, Zhou, Kuan-Ju, Hung, Yang-Hao, Lu, I-Nien, Tsai, Tsung-Ming, Zhang, QunVolume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2990135
Date:
June, 2020
Fichier:
PDF, 1.50 MB
2020
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