Study of GaN MOS-HEMT using ultrathin Al2O3dielectric grown by atomic layer deposition
YuanZheng Yue, Yue Hao, Qian Feng, JinCheng Zhang, XiaoHua Ma, JinYu NiVolume:
52
Langue:
english
Pages:
5
DOI:
10.1007/s11431-008-0231-5
Date:
September, 2009
Fichier:
PDF, 600 KB
english, 2009