Dependence of InGaZnO and SnO2 Thin Film Stacking Sequence for the Resistive Switching Characteristics of Conductive Bridge Memory Devices
Ali, Asif, Abbas, Yawar, Abbas, Haider, Jeon, Yu-Rim, Hussain, Sajjad, Abbas Naqvi, Bilal, Choi, Changhwan, Jung, JongwanJournal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2020.146390
Date:
April, 2020
Fichier:
PDF, 3.25 MB
2020
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