
Changes in band alignment during annealing at 600â°C of ALD Al 2 O 3 on (In x Ga 1âââx ) 2 O 3 for xâ=â0.25â0.74
Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, Martha R., KneiÃ, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S. J.Volume:
127
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/5.0002875
Date:
March, 2020
Fichier:
PDF, 2.83 MB
english, 2020