Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium
Sh. Makhkamov, N. A. Tursunov, M. Karimov, S. Zainabidinov, A. R. Sattiev, M. N. Erdonov, Kh. M. KholmedovVolume:
53
Langue:
english
Pages:
5
DOI:
10.1007/s11182-010-9448-4
Date:
October, 2010
Fichier:
PDF, 446 KB
english, 2010