
[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - On the Surface Properties of High Aspect Ratio $\beta$-Ga 2 O 3 Fin Structures Formed by I-MacEtch
Huang, Hsien-Chih, Kim, Munho, Zhan, Xun, Chabak, Kelson, Kim, Jeongdong, Zuo, Jian-min, Li, XiulingAnnée:
2019
DOI:
10.1109/iciprm.2019.8819197
Fichier:
PDF, 688 KB
2019