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Oxygen incorporated solution-processed high-κ La 2 O 3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films
Yan, Longsen, He, Waner, Liang, Xiaoci, Liu, Chuan, Lu, Xihong, Luo, Chunlai, Zhang, Aihua, Tao, Ruiqiang, Fan, Zhen, Zeng, Min, Ning, Honglong, Zhou, Guofu, Lu, Xubing, Liu, JunmingAnnée:
2020
Journal:
Journal of Materials Chemistry C
DOI:
10.1039/c9tc06210f
Fichier:
PDF, 2.62 MB
2020