
[IEEE 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hangzhou, China (2019.7.2-2019.7.5)] 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) - Poly-Si Unetch Failure Due to Etching Rate Dependence of Si Orientation
Nam, Dahyun, Ryu, Hyunjun, Chung, Shinyoung, Lee, Brandon, Song, Sukchan, Go, Eunbee, Chae, Bongsu, Kim, Ara, Kim, BoMi, Kim, Haeran, Yang, Ji-Sun, Han, SoYeonAnnée:
2019
DOI:
10.1109/IPFA47161.2019.8984839
Fichier:
PDF, 338 KB
2019