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Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation
V. V. Emtsev, V. V. Emtsev, G. A. OganesyanVolume:
18
Langue:
english
Pages:
4
DOI:
10.1007/s10854-006-9109-0
Date:
July, 2007
Fichier:
PDF, 164 KB
english, 2007