Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part I: Accurate and Computationally Efficient Modeling
Qin, Shengjun, Jiang, Zizhen, Li, Haitong, Fujii, Shosuke, Lee, Dongjin, Wong, S. Simon, Wong, H.-S. PhilipVolume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2950606
Date:
December, 2019
Fichier:
PDF, 2.72 MB
2019
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